Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
S. A. Safvi ◽  
N. R. Perkins ◽  
M. N. Horton ◽  
A. Thon ◽  
D. Zhi ◽  
...  
Keyword(s):  
Numerical Model ◽  
Vapor Phase ◽  
Growth Rates ◽  
Ammonia Concentration ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Crystal Quality ◽  
Group V ◽  
Reactor Geometry

AbstractA numerical model of an experimental gallium nitride horizontal vapor phase epitaxy reactor is presented. The model predicts the flow, concentration profiles, and growth rates. The effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated. Numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and inferior crystal quality. A low ammonia concentration is correlated to deposition of polycrystalline films. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.

Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy

1996 ◽  
Vol 449 ◽  
Author(s):  
S. A. Safvi ◽  
N. R. Perkins ◽  
M. N. Horton ◽  
T. F. Kuech
Keyword(s):  
Gas Phase ◽  
Vapor Phase ◽  
Growth Parameters ◽  
Ammonia Concentration ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Group V ◽  
Group Iii

ABSTRACTThe effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated in a horizontal Gallium Nitride vapor phase epitaxy reactor. To better understand the effects of these parameters, numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and may be responsible for inferior crystal quality. A low ammonia concentration is correlated with the deposition of polycrystalline films. A low V/III ratio and an ammonia concentration lead to poor crystalline quality and increased yellow luminescence. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize these parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.

Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

2015 ◽  
Vol 66 (6) ◽  
pp. 994-1000
Author(s):  
Ju-Hyung Ha ◽  
Juan Wang ◽  
Won-Jae Lee ◽  
Young-Jun Choi ◽  
Hae-Yong Lee ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Group V

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Vapor Phase ◽  
Optical Communication ◽  
Ballistic Transport ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Improvement of ($11\bar{2}2$) Semipolar GaN Crystal Quality with TiN Interlayer by Metal Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 ◽  
pp. 115502 ◽  
Author(s):  
Sheng Rui Xu ◽  
Yue Hao ◽  
Lin An Yang ◽  
Jin Cheng Zhang ◽  
Jun Shuai Xue ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Gan Crystal ◽  
Semipolar Gan
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