Optical Characterization and Mapping of Four INCH InSb Epitaxial thin Films Grown on GaAs by Turbo Disk Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 450 ◽  
Author(s):  
Z. C. Feng ◽  
C. Beckham ◽  
P. Schumaker ◽  
I. Ferguson ◽  
R. A. Stall ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Thickness Distribution ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
Large Area ◽  
Metalorganic Chemical

ABSTRACTA large number of 4 inch (100 mm) diameter 1–2 μm thick InSb films have been grown on GaAs by low pressure metalorganic chemical vapor deposition (MOCVD) turbo disk technology. Raman scattering microscopy was used to study the effects of III-V source ratios on the film crystalline quality and to optimize the growth parameters. Multi-point Raman measurements over the entire 4” wafer were performed to exhibit the uniformity distribution of the film crystalline quality. A FTIR reflectance mapping system has been established to map the film thickness distribution. Good uniformity of the film thickness and crystalline perfection was obtained. Raman and FTIR are showing useful tools for non-destructive characterization of large area wafers for industrial mass production.

MOCVD Growth Of GaxIn1−xAs1−ySby and GaxIn1−xSb ALLOYS: Effect of Growth Parameters on Their Solid Compositions

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
Shuwei Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Growth Kinetic ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Mocvd Growth ◽  
Growth Temperature Dependence ◽  
Metalorganic Chemical

ABSTRACTQuaternary GaxIn1−xAs1−ySby and ternary GaxIn1−xSb alloys have been grown by metalorganic chemical vapor deposition (MOCVD). The effects of growth parameters on the solid compositions, x, y for GaxIn1−xAs1−ySby and x for GaxIn1−x Sb alloys are described in detail. Concentrations of the reactants have major effects on the corresponding solid compositions in the two kinds of alloys. The growth temperature dependence of the solid compositions in both GaxIn1−xAs1−ySby and GaxIn1−xSb was obviously observed and the growth kinetic factor was considered to account for this dependence. It was found that III/V ratio in vapor has a great effect on x in GaxIn1−xSb alloy but little effect on x and y in GaxIn1−xAs1−ySby alloy.

Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition

1995 ◽  
Vol 24 (5) ◽  
pp. 483-489 ◽  
Author(s):  
N. H. Karam ◽  
R. Sudharsanan ◽  
A. Mastrovito ◽  
M. M. Sanfacon ◽  
F. T. J. Smith ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Si Substrates ◽  
Metalorganic Chemical
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