The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface

1998 ◽  
Vol 510 ◽  
Author(s):  
P.K. Hurley ◽  
C. Leveugle ◽  
A. Mathewson ◽  
D. Doyle ◽  
S. Whiston ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Energy Gap ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Density Profiles ◽  
Static Capacitance ◽  
Silicon Based ◽  
The Impact

AbstractIn this work, we present results and analysis which demonstrate the influence of rapid thermal annealing (RTA) on the properties of the Si(100)-SiO2 interface. Polysilicon/oxide/silicon capacitor structures were subjected to RTA treatments, in a nitrogen ambient, over the temperature range 600-1050°C. The structures were examined using high frequency and quasi-static capacitance-voltage (CV) analysis to determine the interface state density profile across the energy gap immediately following the RTA step. The effect of hydrogen annealing subsequent to the RTA process is also presented. Based on the analysis of the interface state density profiles, it is suggested in this work, that RTA (T > 600°C) exposes silicon dangling bond (Pb) centres at the Si(100)-SiO2 interface. The implications of this work to the study of the Si-SiO2 interface, and the technological implications for silicon based MOS processes, are discussed.

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors

2017 ◽  
Vol 897 ◽  
pp. 513-516 ◽  
Author(s):  
Muhammad I. Idris ◽  
Ming Hung Weng ◽  
H.K. Chan ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Oxide ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Single Type ◽  
Electrical Stability ◽  
Wide Range ◽  
Flatband Voltage ◽  
The Impact

Operation of SiC MOSFETs beyond 300°C opens up opportunities for a wide range of CMOS based digital and analogue applications. However the majority of the literature focuses only on the optimization of a single type of MOS device (either PMOS or more commonly NMOS) and there is a lack of a comprehensive study describing the challenge of optimizing CMOS devices. This study reports on the impact of gate oxide performance in channel implanted SiC on the electrical stability for both NMOS and PMOS capacitors and transistors. Parameters including interface state density (Dit), flatband voltage (VFB), threshold voltage (VTH) and effective charge (NEFF) have been acquired from C-V characteristics to assess the effectiveness of the fabrication process in realising high quality gate dielectrics. The performance of SiC based CMOS transistors were analyzed by correlating the characteristics of the MOS interface properties, the MOSFET 1/f noise performance and transistor on-state stability at 300°C. The observed instability of PMOS devices is more significant than in equivalent NMOS devices. The results from MOS capacitors comprising interface state density (Dit), flatband voltage (VFB), threshold voltage (VTH) for both N and P MOS are in agreement with the expected characteristics of the respective transistors.

Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO2

2019 ◽  
Vol 954 ◽  
pp. 121-125
Author(s):  
Shi Hai Wang ◽  
Cai Ping Wan ◽  
Heng Yu Xu ◽  
Jin Ping Ao
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Attenuated Total Reflection ◽  
Grinding Process ◽  
Ftir Analysis ◽  
Induced Stress ◽  
Static Capacitance ◽  
Capacitance Voltage

Back-grinding process was applied to the 4H-SiC (0001) epitaxial wafers. We found that the parameters about stress increased after back-grinding process. In our work, the characterization of stress on interface state density (Dit) of SiC/SiO2 was investigated. Furthermore, the absorption of peak frequencies was also observed by fourier transform infrared spectroscopy attenuated total reflection (ATR-FTIR) analysis, and the Dit of SiC/SiO2 was obtained by quasi-static capacitance voltage (QSCV) measurement as well as C-φs method. The above results suggested that the Dit increased with the increasing grinding-induced stress.

Electrical Characteristics of RF Sputtered ZnO/HfO2 Interfaces in Transparent Thin Film Transistors

2015 ◽  
Vol 1792 ◽  
Author(s):  
Prem Thapaliya ◽  
Wenchao Lu ◽  
Rashmi Jha
Keyword(s):  
Thin Film ◽  
Conduction Band ◽  
Thin Film Transistor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Dc Current ◽  
The Impact

ABSTRACTIn this work, we have reported the interface characterization of rf sputtered ZnO/HfO2 in thin film transistor structure by dc current-voltage and admittance spectroscopy. The interface state density (Dit) of 1013 eV−1cm−2 was extracted from the Gp/ω vs ω plot was comparable to value obtained from the subthreshold behavior. The grain boundary trap density (NGB) of 9.12×1012 cm−2 was estimated using Levinson’s model. The interface state density distribution below the conduction band edge shows a decreasing trend with energy below the conduction band edge. We also studied the impact of introducing MgO interfacial layer between ZnO and HfO2 interface as an approach towards decreasing the interface state density.

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

scholarly journals Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation

2014 ◽  
Vol 778-780 ◽  
pp. 631-634 ◽  
Author(s):  
Yoshiyuki Akahane ◽  
Takuo Kano ◽  
Kyosuke Kimura ◽  
Hiroki Komatsu ◽  
Yukimune Watanabe ◽  
...  
Keyword(s):  
Interface State ◽  
Nitride Layer ◽  
State Density ◽  
Interface State Density ◽  
Process Temperature ◽  
Pure Nitrogen ◽  
Interface Property ◽  
Plasma Nitridation

A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.

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