The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Characteristics of Excimer-Laser-Crystallized Polysilicon Films by Line Beam Scanning Method

1994 ◽  
Vol 354 ◽  
Author(s):  
Young Min Jhon ◽  
Dong Hwan Kim ◽  
Hong Chu ◽  
Chang Woo Lee ◽  
Sang Sam Choi
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
Scanning Method ◽  
Gaussian Profile ◽  
Polysilicon Films ◽  
Amorphous States

AbstractCharacteristics of polysilicon films, crystallized by excimer laser annealing, have been investigated. The entire amorphous silicon film of 50 mm X 50 mm has been crystallized by scanning a line shape excimer laser beam, which basically reduces the nonuniformity in the beam overlap region of the 2-dimensional scanning method. The laser beam had a Gaussian profile in the scanning direction, which ensured good crystallization by the reversible transitions between the crystalline and amorphous states and was expected to give step annealing effect The laser energy density and substrate temperature were varied.

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Effects of Excimer Laser Annealing Process on the Ni-Sputtered Amorphous Silicon Film

2010 ◽  
Vol 13 (10) ◽  
pp. H346 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin ◽  
Hoonkee Min ◽  
HoKyoon Chung ◽  
Sangsoo Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Amorphous Silicon Film

Effect of excimer laser annealing on the structural properties of silicon germanium films

2004 ◽  
Vol 19 (12) ◽  
pp. 3503-3511 ◽  
Author(s):  
Sherif Sedky ◽  
Jeremy Schroeder ◽  
Timothy Sands ◽  
Tsu-Jae King ◽  
Roger T. Howe
Keyword(s):  
Surface Roughness ◽  
Excimer Laser ◽  
Silicon Germanium ◽  
Laser Annealing ◽  
Chemical Vapor ◽  
Laser Pulses ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Pressure Chemical ◽  
Columnar Grain

We investigated the use of a pulsed excimer laser having a wavelength of 248 nm, a pulse duration of 38 ns, and an average fluence between 120 and 780 mJ/cm2 to locally tailor the physical properties of Si1−xGex (18% < x < 90%) films deposited by low-pressure chemical vapor deposition at temperatures between 400 and 450 °C. Amorphous as-deposited films showed, after laser annealing, strong {111} texture, a columnar grain microstructure, and an average resistivity of 0.7 mΩ cm. Atomic force microscopy indicated that the first few laser pulses resulted in a noticeable reduction in surface roughness, proportional to the pulse energy. However, a large number of successive pulses dramatically increased the surface roughness. The maximum thermal penetration depth of the laser pulse is demonstrated to depend on the fluence and the film structure being either polycrystalline or amorphous. Finally, a comparison between excimer laser annealing and metal-induced crystallization and rapid thermal annealing is presented.

2-Dimensional Controlled Large Lateral Grain Growth on the Floating Amorphous Silicon Film by Excimer Laser Recrystallization

2003 ◽  
Vol 762 ◽  
Author(s):  
In-Hyuk Song ◽  
Su-Hyuk Kang ◽  
Woo-Jin Nam ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Excimer Laser ◽  
Thermal Gradient ◽  
Laser Annealing ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
Active Structure ◽  
Current Path ◽  
Laser Recrystallization

AbstractWe have successfully obtained large lateral grains with well-controlled grain boundary. The proposed excimer laser annealing (ELA) method produces 2-dimensionally controlled grain growth because the temperature gradient is induced in two directions. Along the channel direction, the floating active structure produces large thermal gradient due to very low thermal conductivity of the air-gap. Along the perpendicular direction to the channel, the surface tension effect also produces thermal gradient. The proposed ELA method can control the grain boundary perpendicular and parallel to current path with only one laser irradiation.

Observation and Annealing of Incomplete Recrystallized Junction Defects due to the Excimer Laser Beam Diffraction at the Gate Edge in Poly-Si TFT

2003 ◽  
Vol 762 ◽  
Author(s):  
Woo-Jin Nam ◽  
Kee-Chan Park ◽  
Sang-Hoon Jung ◽  
Soo-Jeong Park ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Irradiation Intensity ◽  
Transmission Electron ◽  
Electrode Edge ◽  
Beam Diffraction ◽  
Annealing Method

AbstractIncomplete recrystallized junction defects of self-aligned, excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). TEM observation and simulation result verify that the laser irradiation intensity decreased remarkably at the junction due to diffraction of laser beam at gate electrode edge. We proposed oblique-incidence excimer laser annealing method and successfully eliminated the residual junction defects.

Advanced Excimer Laser Annealing of Thin Poly Si Films after Solid Phase Grain Growth

1989 ◽  
Vol 146 ◽  
Author(s):  
Takashi Noguchi ◽  
Kazuhiro Tajima ◽  
Yasushi Morita
Keyword(s):  
Electronic Properties ◽  
Grain Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Liquid Crystal Display ◽  
Silicon Film ◽  
Dendritic Structure ◽  
Large Area ◽  
Excimer Laser Annealing

ABSTRACTThin silicon films with dendritic large grains can be obtained by Si+ or P+ implantation and subsequent low temperature annealing of the silicon film. We tried further exposing the films with an excimer laser after the grain growth. As a result, improvement of electronic properties such as high carrier mobility or low resistivity were obtained. By TEM observation, polycrystalline grains with a dendritic structure did not melt after laser annealing and it was found that the improvement of electronic properties were achieved mainly due to the improvement of crystallinity by U-V(Ultra-Violet) reflectance, ESR(Electron Spin Resonance) analysis and TFT characteristics. We are convinced that this advanced laser pulse annealing method is an ideal RTA process in the near future and is expected to be applicable to ULSI processes for inter connects, high density stacked SRAM and for large area electronics on glass such as a contact line sensor or LCD(Liquid Crystal Display).

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