scholarly journals Comparison Study of a-SiGe Solar Cells and Materials Deposited Using Different Hydrogen Dilution

2000 ◽  
Vol 609 ◽  
Author(s):  
H. Povolny ◽  
P. Agarwal ◽  
S. Han ◽  
X. Deng
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Single Layer ◽  
Chemical Vapor ◽  
Hydrogen Dilution ◽  
Current Voltage ◽  
Ir Transmission ◽  
Cell Current ◽  
Steel Substrates

ABSTRACTA-SiGe n-i-p solar cells with i-layer deposited via plasma enhanced chemical vapor deposition (PECVD) with a germane to disilane ratio of 0.72 and hydrogen dilution R=(H2 flow)/(GeH4+Si2H6 flow) values of 1.7, 10, 30, 50, 120, 180 and 240 were deposited on stainless steel substrates. This germane to disilane ratio is what we typically use for the i-layer in the bottom cell of our standard triple-junction solar cells. Solar cell current-voltage curves (J-V) and quantum efficiency (QE) were measured for these devices. Light soaking tests were performed for these devices under 1 sun light intensity at 50° C. While device with R=30 showed the highest initial efficiency, the device with R=120 exhibit higher stabilized efficiency after 1000 hours of light soaking.Single-layer a-SiGe films (∼500 nm thick) were deposited under the same conditions as the i-layer of these devices on a variety of substrates including 7059 glass, crystalline silicon, and stainless steel for visible-IR transmission spectroscopy, FTIR, and hydrogen effusion studies. It is interesting to note 1) the H content in the film decreased with increasing R based on both the IR and H effusion measurements, and 2) while the H content changes significantly with different R, the change in Eg is relatively small. This is most likely due to a change in Ge content in the film for different R.

The Research of Flexible Solar Cells for Application in Solar Roof

2010 ◽  
Vol 160-162 ◽  
pp. 1394-1398
Author(s):  
Jin Song Lei ◽  
Zhao Qiang Zhang ◽  
Yong Yao
Keyword(s):  
Raman Spectroscopy ◽  
Stainless Steel ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Surface Polishing ◽  
Nano Crystalline ◽  
Current Voltage ◽  
Influence Of Substrate ◽  
Ss Substrates ◽  
Scanning Electron

In this paper, we report the deposition of nano-crystalline silicon flexible solar cells on stainless steel (SS) substrates for application in solar roof. The influence of substrate treatment on the properties of material and the solar cells was studied by Raman spectroscopy, scanning electron microscope, current-voltage (I-V), and Quantum efficiency (QE) measurements. Results suggest that the properties of the Si:H thin films and solar cells were greatly improved by the substrate treatment with surface polishing and the followed Ag/ZnO electrodes deposition.

Current Transport Mechanisms in CuIn1−xGaxSe2 and CIS Thin-Film Solar Cells on Flexible Stainless Steel Substrates

2001 ◽  
Vol 668 ◽  
Author(s):  
Gaurav A. Naik ◽  
Wayne A. Anderson
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Solar Cells ◽  
Thermionic Emission ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Copper Indium ◽  
Current Voltage ◽  
Cigs Solar Cells ◽  
Steel Substrates

ABSTRACTCopper indium gallium selenide (CIGS) solar cells on thin film stainless steel substrates were evaluated by current-voltage-temperature (IVT) from 150K-350K to determine current transport mechanisms. Both dark and photo data at reverse and low forward voltages exhibited tunneling-like behavior. At intermediate forward voltages, diffusion or thermionic emission are suggested by an ideality factor close to 1.0. At higher currents and voltages there is a trend towards recombination or space change limited behavior.

The Properties Of a-Si:H/c-Si Heterostructures Prepared By 55 kHz Pecvd For Solar Cell Application

1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Low Frequency ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Solar Cell Application ◽  
Current Voltage ◽  
Frequency Plasma ◽  
Device Applications

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

Structure and Optoelectronic Properties as a Function of Hydrogen Dilution of Micro-Crystalline Silicon Films Prepared by Hot Wire Chemical Vapor Deposition

1999 ◽  
Vol 557 ◽  
Author(s):  
Guozhen Yue ◽  
Jing Lin ◽  
Qi Wang ◽  
Daxing Han
Keyword(s):  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Peak Position ◽  
Initial Growth ◽  
Hot Wire ◽  
Dilution Ratio ◽  
Structure Transition ◽  
Transparent Substrate ◽  
Hydrogen Dilution ◽  
Substrate Side

AbstractFilms prepared by hot wire CVD using H dilution ratio, R=H 2/SiH4, from 1 to 20 were studied by X-ray, Raman, PL, and conductivity measurements. We found that (a) when the dilution ratio reached R=3, the structure transition from amorphous to microcrystalline growth occured; meanwhile, PL spectrum showed a dual-peak at 1.3 and 1.0 eV; (b) the total intensity, band width, and peak position of the low energy PL band decreased with increasing H dilution; (c) both the Raman and PL measured from the transparent substrate side showed that initial growth tends to be amorphous and a portion of μc-Si was formed when R ≥ 5; and (d) the conductivity activation energy first decreased from 0.68 to 0.15 eV when the film transition from a- to μc-Si; then increased slightly with increasing μc-Si fraction. The results demonstrate that the variation of the H-dilution ratio has significant effects on both the film structures and the optoelectric properties.

Synthesis of multifunctional microdiamonds on stainless steel substrates by chemical vapor deposition

Carbon ◽  
2021 ◽  
Vol 171 ◽  
pp. 739-749
Author(s):  
Pratik Joshi ◽  
Ariful Haque ◽  
Siddharth Gupta ◽  
Roger J. Narayan ◽  
Jagdish Narayan
Keyword(s):  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Steel Substrates

scholarly journals Light trapping in hydrogenated amorphous and nano-crystalline silicon thin film solar cells

2009 ◽  
Vol 1153 ◽  
Author(s):  
Jeffrey Yang ◽  
Baojie Yan ◽  
Guozhen Yue ◽  
Subhendu Guha
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Triple Junction ◽  
Crystalline Silicon ◽  
Light Trapping ◽  
Nano Crystalline ◽  
Back Reflectors ◽  
Back Reflector ◽  
Junction Structure ◽  
Hydrogenated Amorphous

AbstractLight trapping effect in hydrogenated amorphous silicon-germanium alloy (a-SiGe:H) and nano-crystalline silicon (nc-Si:H) thin film solar cells deposited on stainless steel substrates with various back reflectors is reviewed. Structural and optical properties of the Ag/ZnO back reflectors are systematically characterized and correlated to solar cell performance, especially the enhancement in photocurrent. The light trapping method used in our current production lines employing an a-Si:H/a-SiGe:H/a-SiGe:H triple-junction structure consists of a bi-layer of Al/ZnO back reflector with relatively thin Al and ZnO layers. Such Al/ZnO back reflectors enhance the short-circuit current density, Jsc, by ˜20% compared to bare stainless steel. In the laboratory, we use Ag/ZnO back reflector for higher Jsc and efficiency. The gain in Jsc is about ˜30% for an a-SiGe:H single-junction cell used in the bottom cell of a multi-junction structure. In recent years, we have also worked on the optimization of Ag/ZnO back reflectors for nano-crystalline silicon (nc-Si:H) solar cells. We have carried out a systematic study on the effect of texture for Ag and ZnO. We found that for a thin ZnO layer, a textured Ag layer is necessary to increase Jsc, even though the parasitic loss is higher at the Ag and ZnO interface due to the textured Ag. However, a flat Ag can be used for a thick ZnO to reduce the parasitic loss, while the light scattering is provided by the textured ZnO. The gain in Jsc for nc-Si:H solar cells on Ag/ZnO back reflectors is in the range of ˜60-75% compared to cells deposited on bare stainless steel, which is much larger than the enhancement observed for a-SiGe:H cells. The highest total current density achieved in an a-Si:H/a-SiGe:H/nc-Si:H triple-junction structure on Ag/ZnO back reflector is 28.6 mA/cm2, while it is 26.9 mA/cm2 for a high efficiency a-Si:H/a-SiGe:H/a-SiGe:H triple-junction cell.

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