scholarly journals Conduction Band Offset Effect on the Cu2ZnSnS4 Solar Cells Performance

2021 ◽  
Vol 45 (6) ◽  
pp. 431-437
Author(s):  
Ahmed Redha Latrous ◽  
Ramdane Mahamdi ◽  
Naima Touafek ◽  
Marcel Pasquinelli
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Power Conversion ◽  
Electron Work Function ◽  
Band Alignment ◽  
Metal Contact ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Optimal Value ◽  
Offset Effect

Among the causes of the degradation of the performance of kesterite-based solar cells is the wrong choice of the n-type buffer layer which has direct repercussions on the unfavorable band alignment, the conduction band offset (CBO) at the interface of the absorber/buffer junction which is one of the major causes of lower VOC. In this work, the effect of CBO at the interface of the junction (CZTS/Cd(1-x)ZnxS) as a function of the x composition of Zn with respect to (Zn+Cd) is studied using the SCAPS-1D simulator package. The obtained results show that the performance of the solar cells reaches a maximum values (Jsc = 13.9 mA/cm2, Voc = 0.757 V, FF = 65.6%, ɳ = 6.9%) for an optimal value of CBO = -0.2 eV and Zn proportion of the buffer x = 0.4 (Cd0.6Zn0.4S). The CZTS solar cells parameters are affected by the thickness and the concentration of acceptor carriers. The best performances are obtained for CZTS absorber layer, thichness (d = 2.5 µm) and (ND = 1016 cm-3). The obtained results of optimizing the electron work function of the back metal contact exhibited an optimum value at 5.7 eV with power conversion efficiency of 13.1%, Voc of 0.961 mV, FF of 67.3% and Jsc of 20.2 mA/cm2.

The Influence of Conduction Band Offset on CdTe Solar Cells

2017 ◽  
Vol 47 (2) ◽  
pp. 1201-1207 ◽  
Author(s):  
Yunfei Chen ◽  
Xuehai Tan ◽  
Shou Peng ◽  
Cao Xin ◽  
Alan E. Delahoy ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Cdte Solar Cells

Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface

2012 ◽  
Vol 717-720 ◽  
pp. 721-724 ◽  
Author(s):  
Takuji Hosoi ◽  
Takashi Kirino ◽  
Atthawut Chanthaphan ◽  
Yusuke Uenishi ◽  
Daisuke Ikeguchi ◽  
...  
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Hydrogen Gas ◽  
Band Alignment ◽  
Band Offset ◽  
Partial Recovery ◽  
Conduction Band Offset ◽  
Interface Defect ◽  
Defect Passivation ◽  
Thermally Grown

The change in energy band alignment of thermally grown SiO2/4H-SiC(0001) structures due to an interface defect passivation treatment was investigated by means of synchrotron radiation photoelectron spectroscopy (SR-PES) and electrical characterization. Although both negative fixed charge and interface state density in SiO2/SiC structures were effectively reduced by high-temparature hydrogen gas annealing (FGA), the conduction band offset (ΔEc) at the SiO2/SiC interface was found to be decreased by about 0.1 eV after FGA. In addition, a subsequent vacuum annealing to induce hydrogen desorption from the interface resulted in not only a slight degradation in interface property but also a partial recovery of ΔEc value. These results indicate that the hydrogen passivation of negatively charged defects near the thermally grown SiO2/SiC interface causes the reduction in conduction band offset. Therefore, the tradeoff between interface quality and conduction band offset for thermally grown SiO2/SiC MOS structure needs to be considered for developing SiC MOS devices.

Cu(In,Ga)Se2 solar cells with controlled conduction band offset of window/Cu(In,Ga)Se2 layers

2001 ◽  
Vol 89 (12) ◽  
pp. 8327-8330 ◽  
Author(s):  
Takashi Minemoto ◽  
Yasuhiro Hashimoto ◽  
Takuya Satoh ◽  
Takayuki Negami ◽  
Hideyuki Takakura ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset

Relationship between the intermediate phases of the sputtered Zn(O,S) buffer layer and the conduction band offset in Cd-free Cu(In,Ga)Se2 solar cells

CrystEngComm ◽  
2020 ◽  
Vol 22 (26) ◽  
pp. 4416-4426
Author(s):  
Qian Du ◽  
Boyan Li ◽  
Sihan Shi ◽  
Kaizhi Zhang ◽  
Yunxiang Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Buffer Layer ◽  
Conduction Band ◽  
Band Offset ◽  
Device Performance ◽  
Conduction Band Offset ◽  
Intermediate Phases

Intermediate phases are formed in Zn(O,S) thin films with different oxygen fluxes, affecting the device performance.

scholarly journals Highly efficient planar perovskite solar cells through band alignment engineering

2015 ◽  
Vol 8 (10) ◽  
pp. 2928-2934 ◽  
Author(s):  
Juan Pablo Correa Baena ◽  
Ludmilla Steier ◽  
Wolfgang Tress ◽  
Michael Saliba ◽  
Stefanie Neutzner ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Band Alignment ◽  
Highly Efficient ◽  
Conversion Efficiencies

Planar perovskite solar cells exhibit a conduction band misalignment of the perovskite with TiO2, but not with SnO2. The system using the latter yielded power conversion efficiencies over 18%.

Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation

2001 ◽  
Vol 67 (1-4) ◽  
pp. 83-88 ◽  
Author(s):  
Takashi Minemoto ◽  
Takuya Matsui ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa ◽  
Takayuki Negami ◽  
...  
Keyword(s):  
Solar Cells ◽  
Theoretical Analysis ◽  
Conduction Band ◽  
Device Simulation ◽  
Band Offset ◽  
Conduction Band Offset

Variable Light Soaking Effect of Cu(In,Ga)Se2 Solar Cells with Conduction Band Offset Control of Window/Cu(In,Ga)Se2 Layers

2007 ◽  
Vol 1012 ◽  
Author(s):  
Takashi Minemoto ◽  
Yasuhiro Hashimoto ◽  
Takuya Satoh ◽  
Takayuki Negami ◽  
Hideyuki Takakura
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Buffer Layers ◽  
Window Layer ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Variable Light ◽  
Cigs Solar Cells ◽  
The Impact

AbstractThe impact of the conduction band offset (CBO) between window/Cu(In,Ga)Se2 (CIGS) layers on the light soaking (LS) effect in CIGS solar cells has been studied with continuous CBO control using a (Zn,Mg)O (ZMO) window layer. Two types of CIGS solar cells with different window/buffer/absorber layers configurations were fabricated, i.e., ZMO/CIGS (without buffer layer) and ZMO/CdS/CIGS structures. The CBO values between ZMO and CIGS layers were controlled to -0.15~0.25 eV. Plus and minus signs of CBO indicate the conduction band minimums of ZMO above and below that of CIGS, respectively. Current-voltage (J-V) characteristics of the solar cells with different LS durations revealed that a positive CBO value higher than 0.16 eV induces J-V curve distortion, i.e., LS effect, and all the J-V characteristics stabilized in 30 min. The degrees of the LS effect were dominated by the CBO value between ZMO and CIGS layers in the both structure regardless of the existence of CdS buffer layers. These results indicate that the LS effect is dominated by the highest barrier for photo-generated electrons in the conduction band diagram, i.e., the CBO between ZMO and CIGS layers, and quantitatively the LS effect emerges the CBO value higher than 0.16 eV.

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