scholarly journals PENUMBUHAN DAN KARAKTERISASI LAPISAN TIPIS PbTiO3 YANG DISIAPKAN DENGAN TEKNIK SPIN COATING

Molekul ◽  
2008 ◽  
Vol 3 (1) ◽  
pp. 48
Author(s):  
Bilalodin Bilalodin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Bulk Powder ◽  
Pbtio3 Thin Film ◽  
Coating Method

The growth of PbTiO3 ferroelectric thin films have successfully done. Thin films were made from bulk (powder) PbTiO3 dissolved in methanol solution. The condensation was mixed during 1 hour to get homogeneous condensation. Thin films were grown above corning substrates by spin coating method. Optimation was done by various of annealing temperature. The physical properties of thin films were characterized by Energi Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), Scanning and Electron Microscopy (SEM). EDS measurement showed that the stoichiometry composition ratio of Pb/Ti is 1/1.26 at annealing temperature 600oC and 1/1.29 at annealing temperature 700oC. The result of XRD pattern showed that crystal structure of PbTiO3 thin films are tetragonal. The calculated lattice parameters ontained from Chohen Method are a=b= 3.873 Å dan c= 4.130Å. The result of SEM PbTiO3 thin film showed that thin film has globular grain size.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

scholarly journals Effect of Annealing Temperature On Iron Doped Titanium Dioxide Thin Films Prepared By Spin Coating Technique

2016 ◽  
Vol 2 (02) ◽  
pp. 61
Author(s):  
Mukhtar Effendi ◽  
Bilalodin B
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Spin Coating Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Technique ◽  
Doped Titanium Dioxide ◽  
Titanium Dioxide Thin Films

<span>Iron (Fe) doped titanium dioxide (TiO<span>2<span>) thin films have been successfully deposited by <span>using spin coating technique. X-ray diffraction (XRD) and Scanning Electron Microscope <span>(SEM) were employed to characterize the microstructure and crystallite morphology of the <span>films. It was indicated that the rutile crystal orientation appears due to increasing annealing <span>temperature of the thin films. Furthermore, increasing annealing temperature of the thin <span>films yielded an increasing of porosity value which is related to the application on gas <span>sensor films.</span></span></span></span></span></span><br /></span></span></span>

Optical Properties of Cadmium Sulphide (CdS) Thin Films Spin-Coated on Glass Substrates

2021 ◽  
Vol 14 (1) ◽  
pp. 49-58
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Extinction Coefficient ◽  
Spin Coating ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sem Image ◽  
Cds Thin Films

Abstract: CdS thin films were synthesized on a glass substrate using spin coating method. The effects of annealing temperature on the optical properties of the prepared CdS films were investigated for different annealing temperatures of 200, 300 and 400 °C. Cadmium acetate, thiourea and ammonia were used as the source materials for the preparation of the thin films. The elemental composition, morphological, optical and structural properties of the films obtained by spin coating were investigated using Energy Dispersive X- ray Spectroscopy (EDAX), Scanning Electron Microscope (SEM), UV Spectrophotometry and X-ray diffraction (XRD) respectively. The SEM image of the unannealed film shows a spherical morphology and an irregular pattern without any void. It also shows that the film covers the substrate well. Annealing leads to an increase in transmittance with the highest transmission of 87% observed for the film annealed at 400oC. With increase in annealing temperature, optical parameters like extinction coefficient and dielectric constants show a reduction, while refractive index and skin depth exhibit an improvement. The absorption coefficient increases with increasing photon energy in the range 3.6 to 4.0 eV. The band gap values of the CdS thin film samples were found to be in the range between 3.14 eV and 3.63 eV. The bandgap is somewhat greater than the value of bulk CdS due to quantum size effect. EDX image confirmed the presence of Cadmium and Sulphur in the prepared CdS films. Annealing did not significantly change the extinction coefficient. The X-ray diffraction confirms the cubic structure of CdS deposited on glass substrate, where reflections from (111), (200), (220) and (311) planes are clearly shown with a preferential orientation along (111) plane. Debye-Scherer equation was used to determine the crystallite size of the most intense plane (111) and the value was found to be 8.4 nm. Keywords: SEM image, Spin coating, Surface morphology, Optical properties, Annealing.

scholarly journals The structure and optical properties of organic semiconductor bulk hetrojunction blend (NiPcTs/Alq3) thin films

2019 ◽  
Vol 15 (33) ◽  
pp. 40-48
Author(s):  
Atyaf H. Kadhum
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Optical Properties ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Bulk Heterojunction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Visible ◽  
Xrd Patterns

The effect of heat treatment on the optical properties of the bulk heterojunction blend nickel (II) phthalocyanine tetrasulfonic acid tetrasodium salt and Tris (8-hydroxyquinolinato) Aluminum (NiPcTs/Alq3) thin films which prepared by spin coating was described in this study. The films coated on a glass substrate with speed of 1500 rpm for 1.5 min and treated with different annealing temperature (373, 423 and 473) K. The samples characterized using UV-Vis, X ray diffraction and Fourier transform Infrared (FTIR) spectra, XRD patterns indicated the presence of amorphous and polycrystalline blend (NiPcTs/Alq3). The results of UV visible shows that the band gap increase with increasing the annealing temperature up to 373 K and decreases with increase the annealing temperature to (423, 473)K respectively.

scholarly journals Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Cui Yan ◽  
Yao Minglei ◽  
Zhang Qunying ◽  
Chen Xiaolong ◽  
Chu Jinkui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Grain Sizes ◽  
Pzt Thin Film ◽  
Average Residual

Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3(PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

Effect of Annealing Temperature on Silver Doped Titanium Dioxide (Ag/TiO2) Thin Film via Sol-Gel Method

2018 ◽  
Vol 280 ◽  
pp. 26-30 ◽  
Author(s):  
Kamrosni Abdul Razak ◽  
Dewi Suriyani Che Halin ◽  
Mohd Mustafa Abdullah Al Bakri ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Norsuria Mahmed ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Titanium Dioxide ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Titanium Tetraisopropoxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sem Micrograph ◽  
Doped Titanium Dioxide

This study is conducted to investigate the effect of different annealing temperature on the growth of Silver doped Titanium Dioxide (AgTiO2) nanocrystalline thin films.AgTiO2nanocrystalline thin films on silicon wafer have been prepared by sol–gel spin coating. The thin films were characterized for surface morphology and phase analysis by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD. The films prepared by titanium tetraisopropoxide (TTIP) as the precursor under pH of 3.5 ± 0.5 and with annealing temperature of 300, 400, 500 and 600°C for 2h soaking time. X-Ray diffraction shows that only Ag/TiO2thin film annealed at 600°C have anatase TiO2phase. From SEM micrograph, there are cracks and pulled out thin film from the substrate, which were gradually minimize as the annealing temperature increase.

The Effect of Annealing Temperature on the Opt-Electric Properties of Ti:GZO Transparent Conducting OxidesThin Film

2013 ◽  
Vol 284-287 ◽  
pp. 324-328
Author(s):  
Tao Hsing Chen ◽  
Tzu Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Corning Glass ◽  
Conductive Film ◽  
Corning Glass Substrate

This study utilizes radio frequency magnetron sputtering(RF-sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate, then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperature is 300, 500 and 550°C, respectively. Moreover, the effects of process parameters on resistivity and optical properties are investigated. The deposited rate, microstructure, thickness and Optical transmission of Ti:GZO thin film are performed. For example, the thicknesses of films were determined by -step profilometer. The crystalline characteristics of thin films were investigated by X-ray diffraction (XRD). Ga and Ti concentration in ZnO film were determined by energy dispersive X-ray spectroscopy (EDS). The electrical properties of the Ti:GZO thin films were measured by Four point probe. The optical properties of Ti:GZO thin films were examined using UV–vis spectrophotometer. The results show that the transmittance of Ti:GZO thin film exhibited an excellent transparency in the visible light field. The resistivity of Ti:GZO decrease with increasing annealing temperature.

GROWTH AND ELECTRICAL PROPERTIES OF (Bi, Nd)4Ti3O12 THIN FILMS

2004 ◽  
Vol 11 (06) ◽  
pp. 503-507 ◽  
Author(s):  
CHANGHONG YANG ◽  
ZHUO WANG ◽  
DONGYING PAN ◽  
JIANRU HAN ◽  
QINGXIA LI ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Atomic Force Microscope ◽  
Spin Coating ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Dissipation Loss

Neodymium-doped Bi 4 Ti 3 O 12 ( Bi 3.15 Nd 0.85 Ti 3 O 12) thin films have been synthesized by metalorganic solution decomposition and deposited on SiO 2/ p - Si (111) substrate by spin coating. The structural characteristic and crystallization of the films were examined by X-ray diffraction and atomic force microscope. The insulating property, dielectric constant and dissipation loss were found to be dependent on the annealing temperature. Nonhysteretic C – V curves at various frequencies were also collected. The films in the ON and OFF states were relatively stable.

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