scholarly journals Development of High-Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy

Abstract A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (Ssamples = 34.5 mV/kPa/V) and nonlinearity (2KNL samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure Pburst up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).

2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy

<p>A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (S<sub>samples</sub> = 34.5 mV/kPa/V) and nonlinearity (2K<sub>NL</sub> samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure P<sub>burst</sub> up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).</p>


2021 ◽  
Author(s):  
Mikhail ◽  
Denis Prigodskiy

A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from −0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (Ssamples = 34.5 mV kPa−1 V−1) and nonlinearity (2KNL samples = 0.81%FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure Pburst up to 450 kPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).


2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy

<p>A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (S<sub>samples</sub> = 34.5 mV/kPa/V) and nonlinearity (2K<sub>NL</sub> samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure P<sub>burst</sub> up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).</p>


2021 ◽  
Author(s):  
Ang Li ◽  
Ce Cui ◽  
Weijie Wang ◽  
Yue Zhang ◽  
Jianyu Zhai ◽  
...  

Abstract Graphene is complexed with cellulose fibers to construct 3D aerogels, which is generally considered to be an environmentally friendly and simple strategy to achieve wide sensing, high sensitivity and low detection of wearable piezoresistive pressure sensors. Here, graphene is incorporated into waste paper fibers with cellulose as the main component to prepare graphene coated waste paper aerogel (GWA) using a simple “filtration-oven drying” method under atmospheric pressure. The GWA was further annealed to obtain the carbonized graphene coated waste paper aerogel (C-GWA) to achieve low density and excellent resilience. The result shows that the C-GWA has a rough outer surface due to the 3D structure formed by interpenetrated fibers and the carbon skeleton with wrinkles. The sensor based on GCA shows low density (25mg/cm3), a wide detection range of 0-132 kPa, an ultra-low detection limit of 2.5 Pa (a green bean, ≈ 53.4 mg), and a high sensitivity of 31.6 kPa− 1. In addition, the sensor based on C-GWA with the excellent performance can be used to detect human motions including the pulse of the human body, cheek blowing and bending of human joints. The result indicates that the sensor based on C-GWA shows great potential for wearable electronic products.


Small ◽  
2016 ◽  
Vol 12 (28) ◽  
pp. 3827-3836 ◽  
Author(s):  
Zongrong Wang ◽  
Shan Wang ◽  
Jifang Zeng ◽  
Xiaochen Ren ◽  
Adrian J. Y. Chee ◽  
...  

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.


Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.


2013 ◽  
Vol 53 (1) ◽  
pp. 285
Author(s):  
Emile Barrett ◽  
Imran Abbasy ◽  
Chii-Rong Wu ◽  
Zhenjiang You ◽  
Pavel Bedrikovetsky

Estimation of rate profile along the well is important information for reservoir characterisation since it allows distinction of the production rates from different layers. The temperature and pressure sensors in a well are small and inexpensive; while flow meters are cumbersome and expensive, and affect the flow in the well. The method presented in this peer-reviewed paper shows its significance in predicting the gas rate from temperature and pressure data. A mathematical model for pressure and temperature distributions along a gas well has been developed. Temperature and pressure profiles from nine well intervals in field A (Cooper Basin, Australia) have been matched with the mathematical model to determine the flow rates from different layers in the well. The presented model considers the variables as functions of thermal properties at each location, which is more accurate and robust than previous methods. The results of tuning the mathematical model to the field data show good agreement with the model prediction. Simple and robust explicit formulae are derived for the effective estimation of flow rate and thermal conductivity in gas wells. The proposed approach has been applied to determine the well gas rate and formation thermal conductivity from the acquired well pressure and temperature data in field A. It allows for recommending well stimulation of layers with low production rates.


2015 ◽  
Vol 28 (1) ◽  
pp. 123-131 ◽  
Author(s):  
Milos Frantlovic ◽  
Ivana Jokic ◽  
Zarko Lazic ◽  
Branko Vukelic ◽  
Marko Obradov ◽  
...  

Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ? 0.3?C can be achieved.


2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy

Abstract The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2KNL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.


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