scholarly journals Enhanced photodetection performance of sputtered cupric oxide thin film through annealing process

2021 ◽  
Author(s):  
Maha Tariq ◽  
Naveed Afzal ◽  
Mohsin Rafique
Keyword(s):  
Thin Film ◽  
Cupric Oxide ◽  
Schottky Contact ◽  
Annealing Process ◽  
Oxide Thin Film ◽  
Current Gain ◽  
X Ray Diffraction ◽  
Current Voltage ◽  
Maximum Current ◽  
Deposited Film

Abstract This study demonstrates an improvement in the photodetection response of a Cupric Oxide (CuO) thin film through the annealing process. The CuO thin film (400 nm thickness) was deposited on a silicon substrate using DC magnetron sputtering system. Annealing of the as-deposited film was carried out in a muffle furnace at 400 and 500 oC for two hours. X-ray diffraction pattern revealed the formation of a single phase CuO film whose crystallinity improved with increase of the annealing temperature. The field emission scanning electron microscopy indicated a compact and fine granular strcutre of the as-seposited film whereas the segregation and agglomeration of grains was observed after the film’s annealing. The photodetection performance of CuO film with Al contacts was investigated under the exposure of visible light (λ = 460 nm). The current-voltage graphs of as-deposited and annealed films displayed Schottky contact formation between the metal and semiconductor, owing to a lower work function of Al than that of the CuO. The photo-to-dark current ratio of the device was significantly enhanced after the film’s annealing. The increase in photocurrent became more pronounced upon increasing the light intensity from 58.4 to 511 µW/cm2. The maximum current gain and sensitivity values were found to be 66 and 7086.8 % respectively at 10V bias for the film annealed at 500 oC. The rise and fall time of the Al/CuO/Al photodetector was decreased after the film’s annealing.

Characterization of Nanocrystalline p-CuO/n-Si Hetrojunction Prepared by RF-Sputtering

2014 ◽  
Vol 1024 ◽  
pp. 120-123
Author(s):  
Nezar Gassem Elfadill ◽  
M. Roslan Hashim ◽  
Khaled M. Chahrour ◽  
Chun Sheng Wang
Keyword(s):  
Cupric Oxide ◽  
Pure Copper ◽  
Rf Sputtering ◽  
Saturation Current ◽  
Font Size ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Current Voltage ◽  
Capacitance Voltage

Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}Nanocrystalline cupric oxide (CuO) film was prepared by sputtering of pure copper metal on n-type single crystalline Si substrate under argon-oxygen ambient. Structural and morphological analyses of the as-deposited CuO films were performed by X-ray diffraction (XRD) diffractometer and Field Emission Scanning Electron Microscopy (FESEM). The results show Single crystalline granular nanocrystalline (002) CuO films, with 18 nm crystallite size. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed for p-CuO/n-Si hetrojunction. Diode parameters such as saturation current (Is=9.5E-6 A) and ideality factor (n=1.86) were extracted from the dark I-V characteristics. Potential barrier height of the junction (ϕi=1.1V) was revealed from (1/C2- V) plot. Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}

High Performance Zinc Oxide Thin Film Transistors Through Improved Material Processing and Device Design

2014 ◽  
Author(s):  
Ahmad Hossein Adl ◽  
Samira Farsinezhad ◽  
Alex Ma ◽  
Douglas W. Barlage ◽  
Karthik Shankar
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Schottky Contact ◽  
Depletion Region ◽  
Charge Carriers ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Poor Control ◽  
High Throughput Method

Solution processing (SP) is a cheap, simple and high-throughput method for the fabrication of ZnO thin film transistors (TFTs). Lack of enhancement mode operation, poor crystallinity, traps, and poor control of the carrier concentration are some of the disadvantages of this method. The high intrinsic electron concentration of SP-ZnO makes saturation of TFTs non-trivial. We report on Schottky barrier thin film transistors (SB-TFT). By biasing the source Schottky contact in reverse bias, a depletion region is formed around the source contact hence depleting the region from the free charge carriers which produces the saturation of the device. The effect of the Schottky contact is illustrated by comparing the operation of SB-TFTs with that of conventional TFTs.

Characterizations of Nitrogen Doped Cupric Oxide Thin Films Deposited on Different Substrates for Solar Cell Applications

2014 ◽  
Vol 925 ◽  
pp. 469-473
Author(s):  
Poh Kok Ooi ◽  
Mohd Anas Ahmad ◽  
Sha Shiong Ng ◽  
Mat Johar Abdullah
Keyword(s):  
Thin Films ◽  
Cupric Oxide ◽  
Schottky Contact ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitrogen Doped ◽  
Radio Frequency Sputtering ◽  
Indirect Band Gap ◽  
Sputtering System

In this work, structural, optical and electrical properties of nitrogen doped (N-doped) cupric oxide (CuO) thin films deposited on <100> orientated n-type silicon, glass and polyethylene terephthalate substrates using reactive radio frequency sputtering system were investigated. X-ray diffraction results revealed that all films exhibited monoclinic CuO(-111) and have only slightly different structural properties for various substrates. Field effect scanning electron microscopy shown N-doped CuO on Si and glass are denser than on PET substrates and all have nanotriangle-like structure morphologies. The N-doped CuO thin films have an indirect band gap of around 1.30 eV. The resistively, carrier concentration and hall mobility of the N-doped CuO thin film on glass were 1.05 kΩ.cm, 6.70 x 1014 cm-3 and 8.86 cm2/V-s respectively. Furthermore, palladium formed ohmic contact characteristics for N-doped CuO on glass and PET but exhibited schottky contact characteristics for N-doped CuO on Si.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

scholarly journals Structural and Electrical Specification of ZrO2Nano Thin Film Prepared by PLD

2021 ◽  
Vol 24 (2) ◽  
pp. 27-32
Author(s):  
Suroor H. Taha ◽  
◽  
Thamir A. Jumah ◽  
Keyword(s):  
Thin Film ◽  
Annealing Process ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
Electrical Parameters ◽  
Thin Film Thickness ◽  
X Ray ◽  
P Type ◽  
Deposited Films ◽  
Ac Conduction

Zirconium dioxide was prepared as a thin film by using pulse laser deposition (PLD).Subsequently, the films had been thermally treated by annealing process at temperature 450 oC. The structural and electrical parameters of thin films were investigated. As-deposited films were amorphous and had a large surface density of ablated particles. The Annealing process resulted change the phase from amorphous to polycrystalline. The X-ray diffraction of all these films has a polycrystalline structure with two different phases named tetragonal and monoclinic. Hall measurements indicate that the charge carriers of all these films were p-type. In addition, the Hall coefficient suffers some change with thin film thickness. The AC results measured showed the films have resistance and capacitance properties. The AC conduction is dominated by hole cattier.

scholarly journals Silar Deposited Ternary Cucds2 Thin Film for Solar Cell Application

2019 ◽  
Vol 9 (1S3) ◽  
pp. 356-359
Keyword(s):  
Thin Film ◽  
Functional Group ◽  
Film Surface ◽  
Hexagonal Structure ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
Solar Cell Application ◽  
Layer Adsorption ◽  
Deposited Film

The CuCdS2 thin film have been deposited on over the glass substrate by successive ionic layer adsorption and reaction method. The film was characterized by Structural, Functional group, Morphology and Optical properties. The powder X-ray diffraction pattern result showed that the deposited film has confirmed CuCdS2 phase with hexagonal structure. Fourier-transform infrared spectroscopy confirmed the functional group metal vibration of deposited film. The deposited film surface morphology was analysis by scanning electron microscope and no visible cracks. The deposited film has a good absorbance in the visible range and calculated energy band gap is 1.77 eV. This film as a good applicant for economical thin film solar cells.

scholarly journals Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4956
Author(s):  
Yu-Li Hsieh ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Chung-Yi Li ◽  
Chien-Fu Shih ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Gallium Oxide ◽  
Schottky Contact ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Metal Semiconductor Metal ◽  
Ga2o3 Thin Film ◽  
Capacitance Characteristics ◽  
Contact Electrode

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga2O3) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.

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