Issue report summarizing non-destructive characterization and performance of SiC/SiC tubes

2022 ◽  
Author(s):  
Jose' Arregui Mena ◽  
Takaaki Koyanagi ◽  
Hsin Wang ◽  
Yutai Kato
2020 ◽  
Vol 22 (37) ◽  
pp. 20972-20989 ◽  
Author(s):  
Amy C. Marschilok ◽  
Andrea M. Bruck ◽  
Alyson Abraham ◽  
Chavis A. Stackhouse ◽  
Kenneth J. Takeuchi ◽  
...  

This review highlights the efficacy of EDXRD as a non-destructive characterization tool in elucidating system-level phenomena for batteries.


1991 ◽  
Vol 240 ◽  
Author(s):  
F. Uchida ◽  
J. Shigeta ◽  
Y. SUZUKI

ABSTRACTA non-destructive characterization technique featuring a hard X-ray Microprobe is demonstrated for lll-V semiconductor device structures. A GaAs FET with a 2 μm gate length is measured as a model sample of a thin film structure. X-ray scanning microscopic images of the FET are obtained by diffracted X-ray and fluorescence X-ray detection. Diffracted X-ray detection measures the difference in gate material and source or drain material as a gray level difference on the image due to the X-ray absorption ratio. Ni Ka fluorescence detection, on the other hand, provides imaging of 500 Å thick Ni layers, which are contained only in the source and drain metals, through non-destructive observation.


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