Effect of Substrate-induced Strains on Ferroelectric and Dielectric Properties of PZT Films Prepared by Sol-Gel Technique

2020 ◽  
Vol 10 ◽  
Author(s):  
Hamed A. Gatea
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Lead Zirconate Titanate ◽  
Perovskite Structure ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Film ◽  
Pzt Films ◽  
Gel Technique

Background: Lead Zirconate Titanate (PZT) films were synthesized by sol gel technique. The growth of films on ITO, Si\SiO2\Ti\Au, Si\Au and Si\SiO2\Ti\Al substrates discussed. In this study, Zirconium nitrate, lead acetate, and Ti (IV) isoproxide used as raw materials. Besides, acetic acid used as a solvent and 2-methoxy ethanol used as a stabilizer for Ti structure. Along with this, PZT films have perovskite structure, thin-film perovskite structure with high dielectric properties and hysteresis loop have been investigated. Methods: The effects of the type’s substrate on dielectric properties the ferroelectric properties were investigated and compared PZT film which deposited in different substrates. The films annealed at 600 C to complete crystalline films. XRD shows tetragonal PZT films have a strong perovskite structure with [100] prefer plane orientation. SEM and crosssection technique used to study for PZT surface films. Results: The dielectric constant at room temperature was different values depending on the types of substrate. The dielectric properties of the PZT films measured at 1 kHz were 120-400 dielectric constant and dielectric loss 0.02-0.08 at room temperature and 1 kHz. Conclusion: The largest remnant polarization (Pr) and coercive field (Ec) are obtained for PZT film deposited on Si\SiO2\Ti\Au substrate, equal to 26.6 mC/cm2 and 38.3 kV/cm, as compared to 16.3 mC/cm2 and 32.2 kV/cm2 for PZT film deposited on ITO substrate.

Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

1994 ◽  
Vol 360 ◽  
Author(s):  
D.A. Barrow ◽  
T.E. Petroff ◽  
M. Sayer
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Resonant Vibrations ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
High Frequency Resonance ◽  
Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

1994 ◽  
Vol 361 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Kensuke Itani ◽  
Bum-Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Buffer Layers ◽  
Si Substrates ◽  
Pzt Film ◽  
Pzt Films ◽  
Evaporation Technique ◽  
Gel Technique ◽  
Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

Raman analysis of microcircuits with lead zirconate titanate (PZT) films

1992 ◽  
Vol 50 (2) ◽  
pp. 1688-1689
Author(s):  
D. R. Tallant ◽  
R. W. Schwartz ◽  
B. A. Tuttle ◽  
S. C. Everist ◽  
B. C. Tafoya
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Solution Chemistry ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
High Temperature Processing

Certain compositions and structural forms of lead zirconate titanate (PZT) materials have potential applications in microelectronics because of their ferroelectric properties. One such application is in the development of new types of non-volatile memories. PZT films are integrated into microcircuit components using sol-gel deposition techniques. The solution chemistry effects attendant to different sol-gel preparation procedures have been investigated by several researchers.We have used Raman spectroscopy both to characterize the metallo-organic species initially laid down on macroscopic platinum substrates during sol-gel processing and to follow the evolution of Pb-Zr-Ti oxide species through high temperature processing. The high temperature processing removes residual organics and creates Pb-Zr-Ti oxide structures that have ferroelectric properties. Low temperature pyrochlore structures, which are not ferroelectric, can be distinguished by Raman spectroscopy from tetragonal and pseudo-cubic/rhombohedral perovskite structures, which are usefully ferroelectric (Top Figure). In addition Raman spectroscopy has identified lead and titanium oxides that form as intermediates in the high temperature crystallization of ferroelectric PZT structures.

scholarly journals Ferroelectric and Dielectric Properties of ZnFe2O4-Pb(ZrTi)O3Multiferroic Nanocomposites

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Shrabanee Sen ◽  
Sk. Md. Mursalin ◽  
M. Maharajan
Keyword(s):  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
Nanosized Powders ◽  
X Ray ◽  
Magnetoelectric Composites ◽  
Gel Technique

Magnetoelectric composites of zinc ferrite and soft lead zirconate titanate (PZT) having formula 0.5 ZnFe2O4-0.5 PZT were synthesized by sol-gel technique. X-ray diffraction analysis was carried out to confirm the coexistence of individual phase. TEM micrographs were taken to confirm the formation of nanosized powders and SEM micrographs were taken to study the morphology of the sintered pellets. Dielectric and P-E hysteresis loops were recorded, respectively, to confirm the ferroelectric properties of the composites.

Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Yuhuan Xu ◽  
Chih-Hsing Cheng ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Substrate ◽  
Pzt Thin Films ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Technique

ABSTRACTPb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

The Influence of PZT Film Thickness on Microstructure in CSD Processing

2006 ◽  
Vol 45 ◽  
pp. 1268-1274
Author(s):  
A. Etin ◽  
G.E. Shter ◽  
G.S. Grader
Keyword(s):  
State Of The Art ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Film ◽  
Pzt Films ◽  
Film Microstructure ◽  
Multiple Coating

The R&D of state of the art PZT (PbZrxTi1-xO3) films is important due to their piezoelectric, pyroelectric and ferroelectric properties. Currently, Chemical Solution Deposition (CSD) methods (e.g. spin coating of a sol-gel precursor solution) are successfully used in our lab to deposit PZT films with intermediate thickness. This method employs multiple coating procedures and different microstructure is observed after each coating. We report on the film microstructure evolution studied by quantitative analysis of HRSEM images as a function of thickness.

Effect of Sintering Temperature on Structure and Electric Properties of (Ba0.96Ca0.04)(Zr0.05Ti0.95)O3 Ceramics

2015 ◽  
Vol 655 ◽  
pp. 141-146
Author(s):  
Xin Guan ◽  
Xiang Yun Deng ◽  
Jian Hao ◽  
Guang Hao Sun ◽  
Chuang Jun Huang
Keyword(s):  
Dielectric Constant ◽  
Sintering Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Calcium Titanate ◽  
Ferroelectric Ceramics ◽  
X Ray Diffraction ◽  
Pure Perovskite Structure ◽  
Maximum Dielectric Constant ◽  
Gel Technique

Barium calcium titanate (Ba0.96Ca0.04)(Zr0.05Ti0.95)O3 ferroelectric ceramics were prepared by sol–gel technique. The ceramics were sintering at 1290°C-1370°C. X-ray diffraction was employed to investigate the microstructure, and the surface topography was investigated by SEM graphs. The dielectric constant vs temperature was measured by Temperature dielectric spectrometer, and TF Analyzer 2000 measured the ferroelectric properties. It can be found that all the ceramics show pure perovskite structure suggesting that solid solution were formed. SEM showed that the samples uniform in grain size at 1330 °C. Our study revealed that when the sintering temperature is 1330 °C the maximum dielectric constant was 29,600, the maximum piezoelectric coefficient d33 could reach 399pm/V and the remanent polarization (Pr) was 8.3 μc/cm2, respectively.

Optimization of Thermal Processing and Chemistry in the Fabrication of a PZT Based Mems Power Generator

2002 ◽  
Vol 718 ◽  
Author(s):  
B.W. Olson ◽  
J.L. Skinner ◽  
C.D. Richards ◽  
R.F. Richards ◽  
D.F. Bahr
Keyword(s):  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Structure Property ◽  
Power Generator ◽  
Structure Property Relationships ◽  
Pzt Film

AbstractThin films of lead zirconate titanate (PZT) are currently being used in a novel MEMS device to generate power. A piezoelectric stack consisting of platinum/PZT/gold is deposited by sputtering, spin coating, and subsequent heat treatments onto a thin silicon membrane, which is cyclically polarized by a flexing motion. The membrane must withstand strains between 0.1% and 0.5% for several billion cycles to provide a useful device. This study has examined the processing-structure-property relationships in developing the PZT film for use in this device. In the sol-gel deposition of PZT, pyrolysis and crystallization temperatures have been shown to alter both microstructure and properties of the piezoelectric film. The chemistry of the PZT film has also been tailored to increase piezoelectric output for this device. Ferroelectric properties are compared to the piezoelectric outputs, and fatigue behavior is measured on bulk silicon and on membranes.

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