scholarly journals Влияние нейтронного облучения на спектр дефектов с глубокими уровнями в GaAs, изготовленном методом жидкофазной эпитаксии в атмосфере водорода и аргона

2022 ◽  
Vol 56 (1) ◽  
pp. 53
Author(s):  
М.М. Соболев ◽  
Ф.Ю. Солдатенков
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Experimental Studies ◽  
Shallow Donor ◽  
Defect Clusters ◽  
Deep Traps ◽  
Capacitance Voltage ◽  
Before And After ◽  
Transient Spectroscopy ◽  
Different Doses

The results of experimental studies of capacitance– voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900C from one solution–melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance–voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+−p0−i−n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.

Relationship between Constant Voltage and Constant Capacitance DLTS

1983 ◽  
Vol 20 (2) ◽  
pp. 145-149
Author(s):  
W. S. Lau ◽  
Y. W. Lam ◽  
C. C. Chang
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Constant Voltage ◽  
Unified Approach ◽  
Deep Traps ◽  
Capacitance Voltage ◽  
Voltage Transient ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
The Relationship

A unified approach is presented in the derivation of equations for the constant-voltage capacitance transient and constant-capacitance voltage transient in deep-level transient spectroscopy (DLTS), and for the relationship between them. The validity of these equations is independent of the device and nature of deep traps.

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

2006 ◽  
Vol 955 ◽  
Author(s):  
Mo Ahoujja ◽  
S Elhamri ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Unknown Origin ◽  
Shallow Donor ◽  
Related Point ◽  
Line Defects ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

“Recovery” Effect of Electron Induced Damage in 4H-SiC Schottky Diodes

2003 ◽  
Vol 792 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
L. Rigutti ◽  
F. Nava ◽  
P.G. Fuochi ◽  
...  
Keyword(s):  
Deep Level ◽  
Collection Efficiency ◽  
Schottky Diodes ◽  
Chemical Vapour ◽  
Liquid Nitrogen Temperature ◽  
Charge Collection Efficiency ◽  
Before And After ◽  
Transient Spectroscopy ◽  
Lower Temperature ◽  
Different Doses

ABSTRACTThe effects of electron irradiation on the defects associated electronic levels in Schottky diodes on 4H silicon carbide epilayers grown by chemical vapour deposition were investigated by Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) characteristics. These investigations were performed before and after irradiation with 8.6 MeV electrons at different doses. After irradiation four new traps with enthalpies equal to (Ec-0.23 eV), (Ec-0.39 eV), (Ec-0.63 eV) and (Ec-0.75 eV) were detected. Their thermal stability, a key point to determine their structure on the basis of recent theoretical and experimental results, was carefully investigated since it was earlier observed that during DLTS temperature runs up to 500 K a slight but significant recovery of a few irradiation-induced levels occurs. This effect was previously observed in literature for the level (Ec-0.70 eV) after thermal treatment at 500 °C [1], but the present results indicate that it involves more than a single level and is also effective at lower temperature. DLTS analyses were also performed from room temperature to liquid nitrogen temperature and vice versa up to 500 K.The annealing kinetics is reported and a few conclusions on the structure of the defects involved in the recovery are drawn. The correlation with the diode charge collection efficiency is also reported.

Formation of Intrinsic Defects at MBE-Grown GaAs/AlAs Interfaces

1993 ◽  
Vol 312 ◽  
Author(s):  
P. Krispin ◽  
R. Hey ◽  
H. Kostial ◽  
M. Höricke
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Depth Profiling ◽  
Intrinsic Defects ◽  
Capacitance Voltage ◽  
Charge States ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
Arsenic Vacancy

AbstractWe report on a detailed investigation of MBE-grown isotype silicon-doped heterostructures by capacitance/voltage (C/V) technique and deep-level transient spectroscopy (DLTS). A sequence of electrically active defects is found. By depth profiling of the density of the dominant levels it is demonstrated that the corresponding defects are concentrated at the GaAs-on-AlAs (inverted) interface. By comparison with studies on irradiation-induced levels in LPE- or VPE-grown AlGaAs we conclude that the defects at the GaAs/AlAs interface are most probably linked to different charge states of the arsenic vacancy VAs and VAs−ASi pairs.

The Influence of an In-Situ Electric Field on H+ and He+ Implantation Induced Defects in Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
S. Koveshnikov ◽  
G.A. Rozgonyi ◽  
C.W. White
Keyword(s):  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Technique ◽  
Deep Traps ◽  
Observed Behaviour ◽  
Proton Implantation ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTThe influence of in-situ electronic perturbations on defect generation during 150 keV proton implantation into biased silicon p-n junctions has been investigated. The concentration and spatial distribution of the deep traps were characterized using a modification of the double corelation deep level transient spectroscopy technique (D-DLTS). With the in-situ electric field applied, a decrease in concentration of vacancy-related, as well as H-related, traps was observed. 500 keV He+ implantation was also performed to supplement the above studies and to differentiate any passivation effects due to hydrogen. A model based on the charge states of hydrogen and vacancies was used to explain the observed behaviour.

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 373-376 ◽  
Author(s):  
Kazuki Yoshihara ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Low Energy ◽  
Epitaxial Layers ◽  
Before And After ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type

We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated with electrons in order to introduce defects. As a result, we found that electron irradiation to p-type 4H-SiC created complex defects including carbon vacancy or interstitial. Moreover, we found that observed deep levels are different between before and after annealing, and thus annealing may change structures of defects.

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