scholarly journals Исследование подвижности носителей заряда в слоях нанокристаллов PBS методом полевого транзистора

2022 ◽  
Vol 56 (2) ◽  
pp. 236
Author(s):  
П.С. Парфенов ◽  
Н.В. Бухряков ◽  
Д.А. Онищук ◽  
А.А. Бабаев ◽  
А.В. Соколова ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ambient Air ◽  
Inert Atmosphere ◽  
Charge Carriers ◽  
Mobility Of Charge Carriers ◽  
Tetrabutylammonium Iodide ◽  
Effect Transistor ◽  
The Difference ◽  
Current Flows

The field-effect transistor method is used to study the mobility of charge carriers in layers of lead sulfide nanocrystals with ligands of tetrabutylammonium iodide and 1,2-ethanedithiol used to create solar cells. The difference between the operating of a transistor in ambient air and in an inert atmosphere is demonstrated. It is shown that, in the ambient air, the processes of charging nanocrystals are activated when current flows, and the influence of the polarization of the interface of nanocrystals and the insulator on the measurement of the mobility is analyzed. Different reactions of the layers with ligands to light have been demonstrated, showing a significant oxidation of the surface of nanocrystals treated with 1,2-ethanedithiol.

Epoxy Cure Monitoring With An Interdigitated Gate Electrode Field Effect Transistor (IGEFET)

1997 ◽  
Vol 503 ◽  
Author(s):  
E. S. Kolesar ◽  
J. M. Wiseman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Pulse Signal ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Gate Electrode ◽  
Electrode Structure ◽  
Difference Spectra ◽  
Effect Transistor ◽  
The Difference

ABSTRACTAn interdigitated gate electrode field-effect transistor (IGEFET) was designed, fabricated and used to monitor the cure of a common epoxy. The IGEFET sensor consists of an interdigitated gate electrode structure which is coupled to the gate contact of a conventional metal-oxide-semiconductor field-effect transistor (MOSFET). The epoxy was deposited on the interdigitated gate electrode, and the IGEFET's electrical performance was observed as the epoxy cured. The cross-linking chemical reaction during epoxy cure caused electrical impedance changes that were quantified when the IGEFET was operated with a periodic voltage pulse signal. Charge transferred through the chemically-active epoxy is manifested as a temporally-dependent potential applied to the MOSFET's gate contact. By operating the MOSFET as a linear amplifier, a potential corresponding to the temporally-dependent gate voltage was directly measured at the amplifier's output. The Fourier transform of the IGEFET's time-domain response at specific time increments was computed. The resulting epoxy cure spectra were compared to a reproducible baseline spectrum, and an ensemble of difference spectra were computed to reveal the epoxy's chemical state at specific instances of time. The difference spectra features yield valuable information concerning the state of the epoxy's cure.

Air Stable High Resolution OFET (Organic Field Effect Transistor) Fabrication Using Inkjet Printing and Low Temperature Selective Laser Sintering Process

2006 ◽  
Author(s):  
Seung Hwan Ko ◽  
Heng Pan ◽  
Costas P. Grigoropoulos ◽  
Dimos Poulikakos
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ambient Air ◽  
Nano Particles ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
Gold Nano Particles ◽  
Transistor Fabrication

A novel high resolution OFET (organic field effect transistor) fabrication process has been developed to realize low cost, large area electronics at low processing temperature without use of expensive, high temperature lithography process in vacuum. A drop-on-demand (DOD) ink-jetting system was used to print gold nano-particles suspended in Alpha-Terpineol solvent. Continuous Argon ion laser was irradiated locally to evaporate carrier solvent as well as sinter gold nano-particles in order to fabricate metal source and drain electrodes with high resolution and minimal thermal damage to the substrate. PVP (poly-4-vinylphenol) in Hexanol solvent and air-stable semiconductor polymer (Carboxulate - functionalized Polythiophenes) in 1,2-dichlorobenzene (o-DCB) solvent were spin-coated to form thin film of dielectric layer and semiconducting active layer. All of the processes were carried out in plastic-compatible low temperature, ambient air and atmospheric pressure environment. The OFETs showed good accumulation mode p-channel transistor behavior with carrier mobility of 0.01cm2/V·s and Ion/Ioff ratio of ranging from 103 to 104.

scholarly journals Field effect transistor based on protons as charge carriers

2010 ◽  
Vol 5 ◽  
pp. 1368-1371
Author(s):  
J. Matovic ◽  
N. Adamovic ◽  
Z. Jakšić ◽  
U. Schmid
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carriers ◽  
Effect Transistor

FIELD-EFFECT TRANSISTOR STRUCTURES WITH QUASI-ONE-DIMENSIONAL CHANNEL

2004 ◽  
Vol 03 (01n02) ◽  
pp. 161-170 ◽  
Author(s):  
SLAVA V. ROTKIN ◽  
HARRY E. RUDA ◽  
ALEXANDER SHIK
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drift Diffusion Model ◽  
Semiconductor Nanowire ◽  
One Dimensional ◽  
Analytic Expressions ◽  
Effect Transistor ◽  
The Difference ◽  
Electrostatic Calculations ◽  
Unified Description

Drift–diffusion model is applied for transport in a one-dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a single wall nanotube basing on a self-consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of weaker screening and specific charge density distribution in quasi-one-dimensional channel. The device characteristics are shown to be sensitive to the geometry of leads and are analyzed separately for bulk, planar and wire contacts.

Field effect transistor based on ions as charge carriers

2012 ◽  
Vol 170 ◽  
pp. 137-142 ◽  
Author(s):  
J. Matovic ◽  
N. Adamovic ◽  
F. Radovanovic ◽  
Z. Jakšić ◽  
U. Schmid
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carriers ◽  
Effect Transistor

scholarly journals Silicon Carbide MESFET High Frequency Oscillator for Microwave Applications

2019 ◽  
Vol 6 (2) ◽  
pp. 1-4
Keyword(s):  
Silicon Carbide ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Frequency Oscillator ◽  
Output Response ◽  
Frequency Oscillator ◽  
Effect Transistor ◽  
Microwave Applications ◽  
The Difference

The Gouriet oscillator is mainly dealing with 4H-SiC metal semiconductor field effect transistor is fabricated with HPSI substrate and passive integrated elements are based on design for demand of the required function of frequency 1GHz. This high frequency or temperature oscillator is operated from 30 to 200˚C, the gain of the delivered power of 21.8dbm at the frequency of 1GHz and the temperature of 200˚C. The oscillator transistor output response is at 200˚C, the improved percentage is 15%. This output response of the difference in between the frequency around the vary of temperature is less than 0.5%.

Analysis of Polymer Field Effect Transistor

2001 ◽  
Vol 665 ◽  
Author(s):  
Y. Roichman ◽  
N. Tessler
Keyword(s):  
Numerical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Contact Structure ◽  
Two Dimensional ◽  
Time Resolved ◽  
Effect Transistor ◽  
Top Contact ◽  
The Difference ◽  
Insight Into

ABSTRACTWe compare two basic organic FET structures both experimentally and theoretically. By using time resolved analysis we gain insight into the mechanisms affecting the performance of these structures. Using a two dimensional numerical model we focus on the top contact structure and demonstrate the difference between the two structures.

Three Sectional Drift-Diffusion Mathematical Model Of The Field Effect Transistor With A Schottky Barrier

2015 ◽  
Vol 10 (1) ◽  
pp. 57-62
Author(s):  
Sergey Savelkaev ◽  
Valerik Airapetyan ◽  
Vladimir Litovchenko
Keyword(s):  
Mathematical Model ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carriers ◽  
Drift Diffusion ◽  
Flat Area ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor

Three sectional drift-diffusion mathematical model of the field effect transistor with a Schottky barrier is proposed. It takes into account the accumulation of charge carriers in the additionally introduced third section, which significantly improves the accuracy of the calculation of the current-voltage characteristics flat area of the transistors. This is important for developers of these transistors, as well as for amplifying and autogenerating microwave devices constructors.

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