Выращивание слоев GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- методом молекулярно-лучевой эпитаксии
Keyword(s):
By molecular-beam epitaxy we have grown epitaxial layers of GaAs1-xBix solid solutions with a bismuth content of 0 < x < 0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers.
1998 ◽
Vol 184-185
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pp. 1085-1089
2020 ◽
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1989 ◽
pp. 51-59
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Vol 292
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2019 ◽
Vol 6
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pp. 085919
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