scholarly journals Оценка соотношения энергий излучения Вавилова--Черенкова и катодолюминесценции, возбуждаемых электронным пучком в алмазе

2019 ◽  
Vol 127 (10) ◽  
pp. 642
Author(s):  
Е.Х. Бакшт ◽  
К.П. Артемов ◽  
А.Г. Бураченко ◽  
В.Ф .Тарасенко
Keyword(s):  
Refractive Index ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Scattering ◽  
Cherenkov Radiation ◽  
Synthetic Diamond ◽  
Spectral Characteristics ◽  
Experimental Results ◽  
Account Electron

AbstractThe ratio between energies of Vavilov–Cherenkov radiation and cathodoluminescence excited by an electron beam in diamond samples is determined taking into account electron scattering in these samples, energy distribution of beam electrons, ionization losses of the electron energy, and dispersion of the diamond refractive index. Experimental results on measuring spectral characteristics of the glow of natural and synthetic diamond samples under the action of a subnanosecond electron beam with electron energy of up to 200 keV are presented. It is shown that most of the radiation of the diamond samples in the region of 240–750 nm under the action of an electron beam with electron energy of up to 200 keV belongs to cathodoluminescence.

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

Evidence for Electronic Energy Loss Processes Stimulating Solid Phase Epitaxial Regrowth of Spatially Isolated Amorphous Regions in Semiconductor Systems

1994 ◽  
Vol 373 ◽  
Author(s):  
I. Jencic ◽  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Electron Energy ◽  
Solid Phase ◽  
Electronic Energy ◽  
Experimental Results ◽  
Dangling Bonds ◽  
Epitaxial Regrowth ◽  
Charged Defects ◽  
Threshold Displacement

AbstractSolid phase epitaxial regrowth of spatially isolated amorphous regions in Si, Ge and GaP has been stimulated by using an electron beam with energies in the range of 50 to 300 keV. In all materials, the rate at which the amorphous zones disappear decreases as the energy of the electron beam increases from 50 keV reaching a minimum below the threshold displacement voltage before it again increases with increasing electron energy. The experimental results are interpreted in terms of creation and motion of defects (dangling bonds, charged defects) along the amorphouscrystalline interface.

Interaction of excitons with Cherenkov radiation in WSe2 beyond the non-recoil approximation

2021 ◽  
Author(s):  
Fatemeh chahshouri ◽  
Masoud Taleb ◽  
Florian diekmann ◽  
Kai Rossnagel ◽  
Nahid Talebi
Keyword(s):  
Refractive Index ◽  
Electron Beam ◽  
Cherenkov Radiation ◽  
High Refractive Index ◽  
High Yield ◽  
Particle Detection ◽  
Thick Sample ◽  
Accurate Design ◽  
Photon Interactions ◽  
Detection Mechanisms

Abstract Cherenkov radiation from electrons propagating in materials with a high refractive index have applications in particle-detection mechanisms and could be used for high-yield coherent electron beam-driven photon sources. However, the theory of the Cherenkov radiation has been treated up to now using the non-recoil approximation, which neglects the effect of electron deceleration in materials. Here, we report on the effect of electron-beam deceleration on the radiated spectrum and exciton-photon interactions in nm-thick 〖WSe〗_2 crystals. The calculation of the Cherenkov radiation is performed by simulating the kinetic energy of an electron propagating in a thick sample using the Monto Carlo method combined with the Lienard-Wiechert retarded potential. Using this approach, we numerically investigate the interaction between the excitons and generated photons (Cherenkov radiation) beyond the non-recoil approximation and are able to reproduce experimental cathodoluminescence spectra. Our findings pave the way for an accurate design of particle scintillators and detectors, based on the strong-coupling phenomenon.

Response of the electron energy distribution to an artificially emitted electron beam: Apex experiment

1995 ◽  
Vol 15 (12) ◽  
pp. 33-36 ◽  
Author(s):  
L. Prech ◽  
Z. Nemecek ◽  
J. Šafránková ◽  
J. Šimunek ◽  
V. Truhlík ◽  
...  
Keyword(s):  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Energy Distribution
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