Millisecond pulse laser bending of silicon

2008 ◽  
Author(s):  
Dongjiang Wu ◽  
Guangyi Ma ◽  
Bo Yin ◽  
Dongming Guo
Keyword(s):  
Pulse Laser ◽  
Laser Bending ◽  
Millisecond Pulse

Thermal decomposition damage characteristic in GaAs induced by 0.53 μm millisecond pulse laser

2012 ◽  
Vol 24 (10) ◽  
pp. 2287-2290
Author(s):  
毕娟 Bi Juan ◽  
金光勇 Jin Guangyong ◽  
倪晓武 Ni Xiaowu ◽  
张喜和 Zhang Xihe ◽  
姚志健 Yao Zhijian
Keyword(s):  
Thermal Decomposition ◽  
Pulse Laser ◽  
Millisecond Pulse ◽  
Damage Characteristic

scholarly journals Study on the Internal Mechanism of APD Photocurrent Characteristics Caused by the ms Pulsed Infrared Laser Irradiation

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 884
Author(s):  
Liang Chen ◽  
Di Wang ◽  
Guang-Yong Jin ◽  
Zhi Wei
Keyword(s):  
Pulse Laser ◽  
Infrared Laser ◽  
External Circuit ◽  
Recovery Stage ◽  
Millisecond Pulse ◽  
Detection Circuit ◽  
Infrared Laser Irradiation ◽  
Internal Mechanism ◽  
Current Characteristics ◽  
The Time Domain

In this paper, the sampling current characteristics of the external circuit and the internal mechanism of the current generation in APD irradiated by a millisecond pulse laser were studied. The photocurrent of APD irradiated by a millisecond pulse laser with different energy densities was obtained by the sampling resistance of the external circuit. The photocurrent can be divided into a photocurrent stage, conduction stage and recovery stage in the time domain. This is mainly due to the carrier flow in APD, which leads to the lowering of the barrier between the PN junction. The research results of this paper can be extended to the response of the detector to the high-power infrared pulse laser and provide a certain experimental basis for the design of a millisecond pulse infrared laser detection circuit.

Simulation of the Si-CCD irradiated by millisecond pulse laser

Optik ◽  
2017 ◽  
Vol 131 ◽  
pp. 67-71 ◽  
Author(s):  
Mingxin Li ◽  
Guangyong Jin ◽  
Yong Tan
Keyword(s):  
Pulse Laser ◽  
Millisecond Pulse
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