scholarly journals Enhancement of SnO2 for gas sensing applications

2021 ◽  
Vol 32 (3) ◽  
pp. 63
Author(s):  
O. S. Mahdi ◽  
Nadheer Jassim Mohammed
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Gas Sensing ◽  
Rf Magnetron Sputtering ◽  
Ethanol Vapor ◽  
Gas Sensitivity ◽  
Sensing Applications ◽  
Sno2 Thin Films ◽  
The Rich ◽  
Reactive Rf Magnetron Sputtering

Thin films of SnO2 were deposited by reactive RF magnetron sputtering. It was shown that the films possess gas sensitivity to ethanol vapor at room temperature. XRD, SEM, and EDX measurements of thin films were investigated. Annealing of SnO2 thin films at 800 °С is polycrystalline and grain size of SnO2 in the range about 12 nm. The growth of SnO2 with annealing to 800 °C leads to the percolation nanorods structure. EDX clearly explains the rich of Sn reached 70% annealing. The conductivity of SnO2 nanorods has been increasing at room temperature for ethanol vapors. 

scholarly journals Room-temperature synthesis and CO2-gas sensitivity of bismuth oxide nanosensors

RSC Advances ◽  
2020 ◽  
Vol 10 (29) ◽  
pp. 17217-17227 ◽  
Author(s):  
Pritamkumar V. Shinde ◽  
Nanasaheb M. Shinde ◽  
Shoyebmohamad F. Shaikh ◽  
Damin Lee ◽  
Je Moon Yun ◽  
...  
Keyword(s):  
Carbon Dioxide ◽  
Bismuth Oxide ◽  
Room Temperature ◽  
Gas Sensing ◽  
Deposition Method ◽  
Gas Sensitivity ◽  
Temperature Synthesis ◽  
Co2 Gas ◽  
Surface Areas ◽  
Sensing Applications

Room-temperature (27 °C) synthesis and carbon dioxide (CO2)-gas-sensing applications of bismuth oxide (Bi2O3) nanosensors obtained via a direct and superfast chemical-bath-deposition method (CBD) with different surface areas and structures.

Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films

2010 ◽  
Vol 25 (S1) ◽  
pp. S36-S39 ◽  
Author(s):  
Tieying Yang ◽  
Xiubo Qin ◽  
Huan-hua Wang ◽  
Quanjie Jia ◽  
Runsheng Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Microstructure ◽  
Direct Preparation ◽  
Sno2 Thin Films ◽  
P Type ◽  
Reactive Rf Magnetron Sputtering

Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films.

Nanostructured SnO2 thin films for NO2 gas sensing applications

2013 ◽  
Vol 39 (8) ◽  
pp. 8673-8679 ◽  
Author(s):  
G.D. Khuspe ◽  
R.D. Sakhare ◽  
S.T. Navale ◽  
M.A. Chougule ◽  
Y.D. Kolekar ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Sensing Applications ◽  
Sno2 Thin Films

ZnO and Au/ZnO thin films: Room-temperature chemoresistive properties for gas sensing applications

2016 ◽  
Vol 237 ◽  
pp. 1085-1094 ◽  
Author(s):  
A. Gaiardo ◽  
B. Fabbri ◽  
A. Giberti ◽  
V. Guidi ◽  
P. Bellutti ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Gas Sensing ◽  
Zno Thin Films ◽  
Sensing Applications

scholarly journals Physical properties of reactive RF sputtered a-IZON thin films.

2019 ◽  
Vol 65 (2) ◽  
pp. 133
Author(s):  
J. J. Ortega ◽  
C. R. Escobedo-Galván ◽  
F. Avelar-Muñoz ◽  
A. A. Ortiz-Hernández ◽  
H. Tototzintle-Huitle ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Room Temperature ◽  
Amorphous Material ◽  
Optoelectronic Devices ◽  
Rf Magnetron Sputtering ◽  
High Transparency ◽  
Reactive Rf Magnetron Sputtering ◽  
Incorporated Nitrogen

The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10-3 Ω∙cm to 10-4 Ω∙cm, while the carrier concentration showed values over 1020 cm-3 with mobility between 10 and 21 cm2⸱V-1⸱s-1. The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices.

Pulsed laser deposition and characterization of textured Pd-doped-SnO2 thin films for gas sensing applications

2006 ◽  
Vol 497 (1-2) ◽  
pp. 142-148 ◽  
Author(s):  
A. Pereira ◽  
L. Cultrera ◽  
A. Dima ◽  
M. Susu ◽  
A. Perrone ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gas Sensing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sensing Applications ◽  
Sno2 Thin Films
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