scholarly journals Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

2018 ◽  
Vol 69 (5) ◽  
pp. 390-394
Author(s):  
Martin Florovič ◽  
Róbert Szobolovszký ◽  
Jaroslav Kováč ◽  
Jaroslav Kováč ◽  
Aleš Chvála ◽  
...  
Keyword(s):  
Operation Mode ◽  
Drain Current ◽  
Temperature Dependent ◽  
Saturation Velocity ◽  
Channel Temperature ◽  
Device Reliability ◽  
Source Resistance ◽  
Current Change ◽  
Voltage Saturation

Abstract GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.

scholarly journals Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 735
Author(s):  
Fortunato Pezzimenti ◽  
Hichem Bencherif ◽  
Giuseppe De Martino ◽  
Lakhdar Dehimi ◽  
Riccardo Carotenuto ◽  
...  
Keyword(s):  
Drain Current ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Wide Range ◽  
Temperature Ranges ◽  
Joint Contribution ◽  
State Resistance

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

scholarly journals Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Intrinsic Properties ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Layer Graphene ◽  
A Value ◽  
Few Layer Graphene

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

scholarly journals Selectivity of Tungsten Oxide Synthesized by Sol-Gel Method Towards Some Volatile Organic Compounds and Gaseous Materials in a Broad Range of Temperatures

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 523 ◽  
Author(s):  
Simonas Ramanavičius ◽  
Milda Petrulevičienė ◽  
Jurga Juodkazytė ◽  
Asta Grigucevičienė ◽  
Arūnas Ramanavičius
Keyword(s):  
Volatile Organic Compounds ◽  
Organic Compounds ◽  
Sol Gel ◽  
Temperature Dependent ◽  
Sensing Systems ◽  
Sensing Material ◽  
Operational Temperature ◽  
Volatile Organic ◽  
Different Gases

In this research, the investigation of sensing properties of non-stoichiometric WO3 (WO3−x) film towards some volatile organic compounds (VOC) (namely: Methanol, ethanol, isopropanol, acetone) and ammonia gas are reported. Sensors were tested at several temperatures within the interval ranging from a relatively low temperature of 60 up to 270 °C. Significant variation of selectivity, which depended on the operational temperature of sensor, was observed. Here, the reported WO3/WO3–x-based sensing material opens an avenue for the design of sensors with temperature-dependent sensitivity, which can be applied in the design of new gas- and/or VOC-sensing systems that are dedicated for the determination of particular gas- and/or VOC-based analyte concentration in the mixture of different gases and/or VOCs, using multivariate analysis of variance (MANOVA).

Midlatitude Cyclone Compositing to Constrain Climate Model Behavior Using Satellite Observations

2008 ◽  
Vol 21 (22) ◽  
pp. 5887-5903 ◽  
Author(s):  
P. R. Field ◽  
A. Gettelman ◽  
R. B. Neale ◽  
R. Wood ◽  
P. J. Rasch ◽  
...  
Keyword(s):  
Climate Model ◽  
Model Output ◽  
Liquid Water Path ◽  
Temperature Dependent ◽  
Community Atmosphere Model ◽  
Mean Wind Speed ◽  
Mean Fields ◽  
Microphysical Processes ◽  
Midlatitude Cyclones

Abstract Identical composite analysis of midlatitude cyclones over oceanic regions has been carried out on both output from the NCAR Community Atmosphere Model, version 3 (CAM3) and multisensor satellite data. By focusing on mean fields associated with a single phenomenon, the ability of the CAM3 to reproduce realistic midlatitude cyclones is critically appraised. A number of perturbations to the control model were tested against observations, including a candidate new microphysics package for the CAM. The new microphysics removes the temperature-dependent phase determination of the old scheme and introduces representations of microphysical processes to convert from one phase to another and from cloud to precipitation species. By subsampling composite cyclones based on systemwide mean strength (mean wind speed) and systemwide mean moisture the authors believe they are able to make meaningful like-with-like comparisons between observations and model output. All variations of the CAM tested overestimate the optical thickness of high-topped clouds in regions of precipitation. Over a system as a whole, the model can both over- and underestimate total high-topped cloud amounts. However, systemwide mean rainfall rates and composite structure appear to be in broad agreement with satellite estimates. When cyclone strength is taken into account, changes in moisture and rainfall rates from both satellite-derived observations and model output as a function of changes in sea surface temperature are in accordance with the Clausius–Clapeyron equation. The authors find that the proposed new microphysics package shows improvement to composite liquid water path fields and cloud amounts.

scholarly journals The CDC42 Homolog of the Dimorphic FungusPenicillium marneffei Is Required for Correct Cell Polarization during Growth but Not Development

2001 ◽  
Vol 183 (11) ◽  
pp. 3447-3457 ◽  
Author(s):  
Kylie J. Boyce ◽  
Michael J. Hynes ◽  
Alex Andrianopoulos
Keyword(s):  
Cell Shape ◽  
Pathogenic Fungus ◽  
Cell Polarization ◽  
Dominant Negative ◽  
Yeast Cells ◽  
Polarized Growth ◽  
Temperature Dependent ◽  
Human Pathogenic Fungus ◽  
Rho Family

ABSTRACT The opportunistic human pathogenic fungus Penicillium marneffei is dimorphic and is thereby capable of growth either as filamentous multinucleate hyphae or as uninucleate yeast cells which divide by fission. The dimorphic switch is temperature dependent and requires regulated changes in morphology and cell shape. Cdc42p is a Rho family GTPase which in Saccharomyces cerevisiae is required for changes in polarized growth during mating and pseudohyphal development. Cdc42p homologs in higher organisms are also associated with changes in cell shape and polarity. We have cloned a highly conserved CDC42 homolog from P. marneffeinamed cflA. By the generation of dominant-negative and dominant-activated cflA transformants, we have shown that CflA initiates polarized growth and extension of the germ tube and subsequently maintains polarized growth in the vegetative mycelium. CflA is also required for polarization and determination of correct cell shape during yeast-like growth, and active CflA is required for the separation of yeast cells. However, correct cflAfunction is not required for dimorphic switching and does not appear to play a role during the generation of specialized structures during asexual development. In contrast, heterologous expression ofcflA alleles in Aspergillus nidulansprevented conidiation.

Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

2012 ◽  
Vol 1432 ◽  
Author(s):  
D. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
F. Ren ◽  
P. Whiting ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Pumping ◽  
Drain Current ◽  
Stress Tests ◽  
Optically Pumped ◽  
Gan Hemt ◽  
Load Line ◽  
Gan Hemts ◽  
Dc Stress

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

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