INVESTIGATION OF PHYSICAL PRINCIPLES OF RESISTIVE SWITCHING IN RERAM STRUCTURES BASED ON HAFNIUM OXIDE
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In this paper, the physical principles of resistive switching in the Au/Ti/HfO2/Au/Si memristor are investigated, including oxygen ions transport, heat transfer and electric current flow through the structure.
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2016 ◽
Vol 113
◽
pp. 012019
2017 ◽
Vol 7
(7)
◽
pp. 1069-1080
2014 ◽
Vol 62
(3)
◽
pp. 465-469