scholarly journals INVESTIGATION OF PHYSICAL PRINCIPLES OF RESISTIVE SWITCHING IN RERAM STRUCTURES BASED ON HAFNIUM OXIDE

Author(s):  
Ekaterina Ganykina ◽  
Asrar Rezvanov ◽  
Yevgeny Gornev

In this paper, the physical principles of resistive switching in the Au/Ti/HfO2/Au/Si memristor are investigated, including oxygen ions transport, heat transfer and electric current flow through the structure.

1995 ◽  
Vol 87 (4-5) ◽  
pp. 843-847
Author(s):  
R. Signerski ◽  
J. Godlewski ◽  
H. Sodolski

2014 ◽  
Vol 62 (3) ◽  
pp. 465-469
Author(s):  
W. Bielski ◽  
P. Kowalczyk ◽  
E. Czerwosz ◽  
A. Idzik ◽  
J. Rymarczyk

Abstract In this paper we propose a model of electric current flow through one-dimensional palladium-carbon nanostructure (nanowire) and compare the results of numerical computations with the experimental data. We focus on two aspects: 1) calculation of the current flow through the nanowire model, 2) determination of the macroscopic parameters in the nanocomposite in our model. Because of a complex micro-geometry of a nanowire, we apply the homogenization method to perform the numerical computations.


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