scholarly journals Preparation and Characterization of Electrodeposited Co/p-Si Schottky Diodes

2009 ◽  
Vol 4 (2) ◽  
pp. 79-83
Author(s):  
R. Zandonay ◽  
R. G. Delatorre ◽  
A. A. Pasa

Schottky diodes were prepared by photoinduced electrodeposition of Co on p-Si, probing the influence of different concentrations of CoSO4 (26 and 104 mM) in the electrolyte on the electrical properties of the metal-semiconductor interface. Current density versus voltage (JxV) and capacitance versus voltage (CxV) measurements were performed in diodes with different Co thicknesses to obtain the barrier heights and ideality factors. Atomic force microscopy (AFM) and vibrating sample magnetometry (VSM) were additional techniques used to determine the surface morphology and the magnetic response. Devices with improved electrical properties were observed by increasing the thickness of the metal, i. e., saturation currents with values of about 0.1 mA.cm-2, ideality factors close to 1.19 and barrier heights of about 0.65 eV were determined.

2004 ◽  
Vol 10 (S02) ◽  
pp. 1102-1103
Author(s):  
Guangchun Cui ◽  
Rosario A Gerhardt

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


2008 ◽  
Vol 2008 ◽  
pp. 1-7 ◽  
Author(s):  
F. Ruffino ◽  
A. Canino ◽  
M. G. Grimaldi ◽  
F. Giannazzo ◽  
F. Roccaforte ◽  
...  

A bottom-up methodology to fabricate a nanostructured material by Au nanoclusters on 6H-SiC surface is illustrated. Furthermore, a methodology to control its structural properties by thermal-induced self-organization of the Au nanoclusters is demonstrated. To this aim, the self-organization kinetic mechanisms of Au nanoclusters on SiC surface were experimentally studied by scanning electron microscopy, atomic force microscopy, Rutherford backscattering spectrometry and theoretically modelled by a ripening process. The fabricated nanostructured materials were used to probe, by local conductive atomic force microscopy analyses, the electrical properties of nano-Schottky contact Au nanocluster/SiC. Strong efforts were dedicated to correlate the structural and electrical characteristics: the main observation was the Schottky barrier height dependence of the nano-Schottky contact on the cluster size. Such behavior was interpreted considering the physics of few electron quantum dots merged with the concepts of ballistic transport and thermoionic emission finding a satisfying agreement between the theoretical prediction and the experimental data. The fabricated Au nanocluster/SiC nanocontact is suggested as a prototype of nano-Schottky diode integrable in complex nanoelectronic circuits.


2021 ◽  
Author(s):  
Illia Dobryden ◽  
Riccardo Borgani ◽  
Federica Rigoni ◽  
Pedram Ghamgosar ◽  
Isabella Concina ◽  
...  

The electrical properties of an all-oxide core-shell ZnO-Co3O4 nanorod heterojunction were studied in dark and under UV-vis illumination. The contact potential difference and current distribution maps were obtained utilizing new...


Author(s):  
Willian Silva Conceição ◽  
Ştefan Ţălu ◽  
Robert Saraiva Matos ◽  
Glenda Quaresma Ramos ◽  
Fidel Guereiro Zayas ◽  
...  

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