scholarly journals Impact of Thermal Boundary Resistance on Thermoelectric Effects of the Blade-Type Phase-Change Random Access Memory Device

2022 ◽  
Vol 8 ◽  
Author(s):  
Xiaojuan Lian ◽  
Jinke Fu ◽  
Zhixuan Gao ◽  
Wang Ren ◽  
Xiang Wan ◽  
...  

Phase-change random access memory (PCRAM) is widely regarded as one of the most promising candidates to replace Flash memory as the next generation of non-volatile memories due to its high-speed and low-power consumption characteristics. Recent advent of the blade-type PCRAM with low programming current merit further confirms its prospects. The thermoelectric effects existing inside the PCRAM devices have always been an important factor that determines the phase-transformation kinetics due to a fact that it allows PCRAM to have electric polarity dependent characteristics. However, the potential physics governing the thermoelectric effects for blade-type PCRAM device still remains vague. We establish a three-dimensional (3D) electro-thermal and phase-transformation model to study the influences of thermal boundary resistance (TBR) and device scaling on the thermoelectric effects of the blade-type PCRAM during its “RESET” operation. Our research shows that the presence of TBR significantly improves the electric polarity-dependent characteristics of the blade-type PCRAM, and such polarity-dependent characteristic is found immune to the scaling of the device. It is therefore possible to optimize the thermoelectric effects of the blade-type PCRAM through appropriately tailoring the TBR parameters, thus further lowering resulting power consumption.

2004 ◽  
Vol 830 ◽  
Author(s):  
Suyoun Lee ◽  
Y. J. Song ◽  
Y. N. Hwang ◽  
S. H. Lee ◽  
J. H. Park ◽  
...  

With respect to the operation of a Phase-change Random Access Memory (PRAM or PcRAM), we studied the effect of the contact between the electrode metal and the chalcogenide glass, N2 doped Ge2Sb2Te5 in this report. We investigated a change of the resistance-programming current pulse (R-I) curve varying the contact size and the electrode material. Also we tested the surface oxidation of the electrode. We found that the programming current, the resistance of the programmed state (“RESET”) and the erased state (“SET”) were highly dependent on the above parameters. These results are presented and a more effective way to the high density PRAM will be proposed.


2006 ◽  
Vol 45 (No. 28) ◽  
pp. L726-L729 ◽  
Author(s):  
You Yin ◽  
Akihira Miyachi ◽  
Daisuke Niida ◽  
Hayato Sone ◽  
Sumio Hosaka

2007 ◽  
Vol 124-126 ◽  
pp. 37-40 ◽  
Author(s):  
Sung Soon Kim ◽  
Jun Hyun Bae ◽  
Woo Hyuck Do ◽  
Kyun Ho Lee ◽  
Young Tae Kim ◽  
...  

Thermal stress model considering the effect of phase transformation is proposed for Phase-Change Random Access Memory (PRAM). The results of simulation show that the high level of stress is generated on the junction where Ge2Sb2Te5(GST), TiN and SiO2 meet together. The high level of stress can also be observed in the interface between TiN and SiO2. From simulation results, it can be predictable that delamination between GST and TiN can occur during operation of PRAM. It is expected that the simulation model, which has been developed in this research, is very useful tool for PRAM device design.


2008 ◽  
Vol 92 (14) ◽  
pp. 142110 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jin Ho Oh ◽  
Jong Ho Lee ◽  
Byung Joon Choi ◽  
Won Kim ◽  
...  

2014 ◽  
Vol 104 (10) ◽  
pp. 103510 ◽  
Author(s):  
Bo Jin ◽  
Taekyung Lim ◽  
Sanghyun Ju ◽  
Marat I. Latypov ◽  
Dong-Hai Pi ◽  
...  

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.


2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  

2006 ◽  
Vol 45 (5A) ◽  
pp. 3955-3958 ◽  
Author(s):  
X. S. Miao ◽  
L. P. Shi ◽  
H. K. Lee ◽  
J. M. Li ◽  
R. Zhao ◽  
...  

2005 ◽  
Vol 98 (1) ◽  
pp. 013520 ◽  
Author(s):  
V. Giraud ◽  
J. Cluzel ◽  
V. Sousa ◽  
A. Jacquot ◽  
A. Dauscher ◽  
...  

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