scholarly journals In Situ Hyperspectral Raman Imaging: A New Method to Investigate Sintering Processes of Ceramic Material at High-temperature

2019 ◽  
Vol 9 (7) ◽  
pp. 1310 ◽  
Author(s):  
Kerstin Hauke ◽  
Johannes Kehren ◽  
Nadine Böhme ◽  
Sinje Zimmer ◽  
Thorsten Geisler

In the last decades, Raman spectroscopy has become an important tool to identify and investigate minerals, gases, glasses, and organic material at room temperature. In combination with high-temperature and high-pressure devices, however, the in situ investigation of mineral transformation reactions and their kinetics is nowadays also possible. Here, we present a novel approach to in situ studies for the sintering process of silicate ceramics by hyperspectral Raman imaging. This imaging technique allows studying high-temperature solid-solid and/or solid-melt reactions spatially and temporally resolved, and opens up new avenues to study and visualize high-temperature sintering processes in multi-component systems. After describing in detail the methodology, the results of three application examples are presented and discussed. These experiments demonstrate the power of hyperspectral Raman imaging for in situ studies of the mechanism(s) of solid-solid or solid-melt reactions at high-temperature with a micrometer-scale resolution as well as to gain kinetic information from the temperature- and time-dependent growth and breakdown of minerals during isothermal or isochronal sintering.

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 555 ◽  
Author(s):  
Hadjer Ouaddah ◽  
Maike Becker ◽  
Thècle Riberi-Béridot ◽  
Maria Tsoutsouva ◽  
Vasiliki Stamelou ◽  
...  

To control the final grain structure and the density of structural crystalline defects in silicon (Si) ingots is still a main issue for Si used in photovoltaic solar cells. It concerns both innovative and conventional fabrication processes. Due to the dynamic essence of the phenomena and to the coupling of mechanisms at different scales, the post-mortem study of the solidified ingots gives limited results. In the past years, we developed an original system named GaTSBI for Growth at high Temperature observed by Synchrotron Beam Imaging, to investigate in situ the mechanisms involved during solidification. X-ray radiography and X-ray Bragg diffraction imaging (topography) are combined and implemented together with the running of a high temperature (up to 2073 K) solidification furnace. The experiments are conducted at the European Synchrotron Radiation Facility (ESRF). Both imaging techniques provide in situ and real time information during growth on the morphology and kinetics of the solid/liquid (S/L) interface, as well as on the deformation of the crystal structure and on the dynamics of structural defects including dislocations. Essential features of twinning, grain nucleation, competition, strain building, and dislocations during Si solidification are characterized and allow a deeper understanding of the fundamental mechanisms of its growth.


2009 ◽  
Vol 11 (17) ◽  
pp. 3138 ◽  
Author(s):  
Dmytro Sugak ◽  
Yaroslav Zhydachevskii ◽  
Yuriy Sugak ◽  
Oleg Buryy ◽  
Sergii Ubizskii ◽  
...  

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