scholarly journals TiO2@MOF Photocatalyst for the Synergetic Oxidation of Microcystin-LR and Reduction of Cr(VI) in Aqueous Media

Catalysts ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1186
Author(s):  
Yarui Wang ◽  
Wanchao Yu ◽  
Fanglan Geng ◽  
Lixia Zhao ◽  
Yawei Wang
Keyword(s):  
Electron Spin Resonance ◽  
Charge Separation ◽  
Oxidation Process ◽  
Aqueous Media ◽  
In Situ Growth ◽  
Spin Resonance ◽  
Efficient Charge ◽  
Reduction And Oxidation ◽  
Pollutants Removal

The coexistence of pollutants presents a great challenge to the implementation of photocatalysts. In this work, a novel MIL-101(Fe)/TiO2 composite prepared by in situ growth of MIL-101(Fe) on TiO2 was developed for the synergetic oxidation of MC-LR and Cr(VI) reduction. The heterojunction material shows elevated photocatalytic behavior under ultraviolet compared with the unary pollutant system. Furthermore, quenching experiments and electron spin resonance confirm that the enhanced photodegradation behavior is related to the synergistic effect between the photocatalytic reduction and oxidation process, in which MC-LR consumes the holes and Cr(VI) captures electrons, followed by efficient charge separation through the conventional double-transfer mechanism between MIL-101(Fe) and TiO2. This investigation provides a deeper understanding of the construction of MOFs/semiconductor heterojunctions for the pollutants removal in multi-component contaminants system.

Construction of Hierarchical ZnIn2S4/C3N4 Heterojunction for Enhanced Photocatalytic Degradation of Tetracycline

2022 ◽  
Author(s):  
Feng Min ◽  
Zhengqing Wei ◽  
Zhen Yu ◽  
Yu-Ting Xiao ◽  
Shien Guo ◽  
...  
Keyword(s):  
Photocatalytic Degradation ◽  
Organic Contaminants ◽  
Charge Separation ◽  
Active Sites ◽  
In Situ Growth ◽  
Efficient Charge

Both efficient charge separation and sufficiently exposed active sites are critical limiting for solar-driven organic contaminants degradation. Herein, we describe a hierarchical heterojunction photocatalyst fabricated by in situ growth of...

In situ electron spin resonance observation of Si(111) 7×7 surface during hydrogenation process

2001 ◽  
Vol 19 (5) ◽  
pp. 1898 ◽  
Author(s):  
Wataru Futako ◽  
Masayasu Nishizawa ◽  
Tetsuji Yasuda ◽  
Jun-ichi Isoya ◽  
Satoshi Yamasaki
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Hydrogenation Process ◽  
Spin Resonance

scholarly journals Real-time in situ electron spin resonance measurements on fungal spores of Penicillium digitatum during exposure of oxygen plasmas

2012 ◽  
Vol 101 (1) ◽  
pp. 013704 ◽  
Author(s):  
Kenji Ishikawa ◽  
Hiroko Mizuno ◽  
Hiromasa Tanaka ◽  
Kazuhiro Tamiya ◽  
Hiroshi Hashizume ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Real Time ◽  
Electron Spin ◽  
Fungal Spores ◽  
Penicillium Digitatum ◽  
Spin Resonance

Probing Semiconductor/Insulator Heterostructures Through Electron Spin Resonance of Point Defects: Interfaces, Interlayers, and Stress

2006 ◽  
Vol 984 ◽  
Author(s):  
A. Stesmans ◽  
K. Clémer ◽  
P. Somers ◽  
V. V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Integrated Circuits ◽  
Electron Spin ◽  
Point Defects ◽  
Atomic Scale ◽  
Interface Quality ◽  
Si Substrates ◽  
Spin Resonance ◽  
The Impact

AbstractElectron spin resonance (ESR) spectroscopy has become indispensable when it comes to the characterization on atomic-scale of structural, and correlated, electrical properties of actual semiconductor/insulator heterostructures. Through probing of paramagnetic point defects such as the Pb-type defects, E', and EX as a function of VUV irradiation and post deposition heat treatment, basic information as to the nature, quality, and thermal stability of the interface and interfacial regions can be established. This is illustrated by some specific examples of ESR analysis on contemporary Si/insulator structures promising for future developments in integrated circuits. First the impact of strain on the Si/SiO2 entity will be discussed. Through ESR analysis of thermally oxidized (111)Si substrates mechanically stressed in situ during oxidation, and tensile strained (100)sSi/SiO2 structures, it will be pointed out that in-plane tensile stress in Si can significantly improve the interface quality. Next, ESR results for stacks of (100)Si/SiOx/HfO2 and (100)Si/LaAlO3 are presented, revealing the potential to attain a high quality Si/SiO2 interface for the former and an abrupt, thermally stable interface for the latter.

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