scholarly journals Reduction of Surface Residual Lithium Compounds for Single-Crystal LiNi0.6Mn0.2Co0.2O2 via Al2O3 Atomic Layer Deposition and Post-Annealing

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 84
Author(s):  
Jiawei Li ◽  
Junren Xiang ◽  
Ge Yi ◽  
Yuanting Tang ◽  
Huachen Shao ◽  
...  

Surface residual lithium compounds of Ni-rich cathodes are tremendous obstacles to electrochemical performance due to blocking ion/electron transfer and arousing surface instability. Herein, ultrathin and uniform Al2O3 coating via atomic layer deposition (ALD) coupled with the post-annealing process is reported to reduce residual lithium compounds on single-crystal LiNi0.6Mn0.2Co0.2O2 (NCM622). Surface composition characterizations indicate that LiOH is obviously reduced after Al2O3 growth on NCM622. Subsequent post-annealing treatment causes the consumption of Li2CO3 along with the diffusion of Al atoms into the surface layer of NCM622. The NCM622 modified by Al2O3 coating and post-annealing exhibits excellent cycling stability, the capacity retention of which reaches 92.2% after 300 cycles at 1 C, much higher than that of pristine NCM622 (34.8%). Reduced residual lithium compounds on NCM622 can greatly decrease the formation of LiF and the degree of Li+/Ni2+ cation mixing after discharge–charge cycling, which is the key to the improvement of cycling stability.

RSC Advances ◽  
2016 ◽  
Vol 6 (68) ◽  
pp. 63250-63255 ◽  
Author(s):  
Ming Xie ◽  
Tao Hu ◽  
Liu Yang ◽  
Yun Zhou

The electrochemical properties of high-voltage (4.7 V) LiCoO2 cathode materials with Al doping and a conformal Al2O3 coating by atomic layer deposition were studied in this paper.


2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  

2013 ◽  
Vol 734-737 ◽  
pp. 2492-2495
Author(s):  
Yong June Choi ◽  
Kyung Mun Kang ◽  
Hyung Ho Park

The post-annealing effects on the surface morphological changes of undoped and Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer deposition (ALD) were investigated. The as-grown films were deposited by ALD at growth temperature of 200°C and also, post-annealing of the samples was accomplished at 300°C for 1 h under nitrogen atmosphere. The X-ray diffraction of the films was monitored to study the crystallinity of the films according to post-anneal. The field emission-scanning electron microscopy and atomic force microscopy were conducted to observe the surface morphological changes and measure the root-mean-square roughness of the films in order to analysis the post-annealing effects on the surface roughness of the films.


2019 ◽  
Vol 7 (19) ◽  
pp. 5772-5781 ◽  
Author(s):  
Yujie Zhao ◽  
Liangjun Yin ◽  
O. M. ten Kate ◽  
Benjamin Dierre ◽  
Ruben Abellon ◽  
...  

Enhanced thermal degradation stability of the Sr2Si5N8:Eu2+ phosphor by ultra-thin Al2O3 coating through FB-ALD.


Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 24
Author(s):  
Marion Duparc ◽  
Henrik Hovde Sønsteby ◽  
Ola Nilsen ◽  
Anja Olafsen Sjåstad ◽  
Helmer Fjellvåg

Thin films of the catalytically interesting ternary and quaternary perovskites GdCoO3 and Gd0.9Ca0.1CoO3 are fabricated by atomic layer deposition using metal β-diketonates and ozone as precursors. The resulting thin films are amorphous as deposited and become single-oriented crystalline on LaAlO3(100) and YAlO3(100/010) after post-annealing at 650 °C in air. The crystal orientations of the films are tunable by choice and the orientation of the substrate, mitigated through the interface via solid face epitaxy upon annealing. The films exhibit no sign of Co2+. Additionally, high-aspect-ratio Si(100) substrates were used to document the suitability of the developed process for the preparation of coatings on more complex, high-surface-area structures. We believe that coatings of GdCoO3 and Gd1−xCaxCoO3 may find applications within oxidation catalysis.


2015 ◽  
Vol 495 ◽  
pp. 101-109 ◽  
Author(s):  
Outi Toikkanen ◽  
Mikko Nisula ◽  
Elina Pohjalainen ◽  
Sami Hietala ◽  
Hannele Havansi ◽  
...  

2003 ◽  
Vol 252 (4) ◽  
pp. 565-569 ◽  
Author(s):  
B. Min ◽  
J.S. Lee ◽  
J.W. Hwang ◽  
K.H. Keem ◽  
M.I. Kang ◽  
...  

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