scholarly journals Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

Crystals ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 11
Author(s):  
Selma Erat ◽  
Artur Braun ◽  
Samed Çetinkaya ◽  
Saadet Yildirimcan ◽  
Ahmet Emre Kasapoğlu ◽  
...  

Intrinsic and dandelion-like microflower nano-rod structures of boron-doped ZnO thin films were synthesized with an ecofriendly and cost-effective chemical bath deposition technique from an aqueous solution of zinc nitrate hexahdyrate [Zn(NO3)2.6H2O] as a precursor solution and boric acid as a doping solution. The boron concentrations were 0.1, 0.3, 0.5, 1.0, 3.0, 5.0, and 7.0 by volume. Scanning electron micrographs showed that doping with boron appears to hinder the vertical alignment of crystallites. Additionally, independent hexagonal nano-rod structures were observed to coalesce together to form dandelion-like structures on the film’s surface. The atomic ratio of the elements was determined via the X-ray photoemission spectrum technique. There were no substantial changes in the vibration structure of the film upon doping in terms of the Raman spectra. The optical band gap of ZnO (3.28 eV) decreased with B doping. The band gap of the ZnO:B film varied between 3.18 and 3.22 eV. The activation energy of the ZnO was calculated as 0.051 eV, whereas that of the ZnO:B film containing 1.0% B was calculated as 0.013 eV at low temperatures (273–348 K), versus 0.072 eV and 0.183 eV at high temperatures (348–523 K), respectively. Consequently, it can be interpreted that the 1% B-doped ZnO, which has the lowest activation energy at both low and high temperatures, may find some application areas such as in sensors for gases and in solar cells.

2016 ◽  
Vol 675-676 ◽  
pp. 69-72
Author(s):  
Krisana Chongsri ◽  
Wanichaya Mekprasart ◽  
Wisanu Pecharapa

In this work, we reported the preparation of F-doped ZnO nanoparticles by facile precipitation process using zinc nitrate and ammonium fluoride as starting precursors for Zn and F, respectively dissolved in deionized water. The precursor solution was prepared at various fluoride composition ranging from 1-5 wt%. The as-precipitated powders were calcined at different temperature from 500 °C to 700 °C for 2 h. Effect of calcination temperature and fluoride concentration on structural, morphologies, optical and electrical properties were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis spectroscopy, respectively. XRD results indicated the complete formation of hexagonal wurtzite structure of ZnO. SEM micrographs showed the agglomeration for each sample that noticeably influenced by fluoride content.


2016 ◽  
Vol 34 (2) ◽  
pp. 354-361 ◽  
Author(s):  
R.K. Shukla ◽  
Anchal Srivastava ◽  
Nishant Kumar ◽  
Akhilesh Pandey ◽  
Mamta Pandey

AbstractUndoped and Fe doped ZnO films of different molarities deposited by spray pyrolysis method using zinc nitrate and ferric chloride as precursors show polycrystalline nature and hexagonal wurtzite structure. Crystallite size decreases with an increase in dopant concentration from 0 at.% to 3 at.%. Doping improves the transmission of the films whereas it reduces the optical band gap of ZnO from 3.28 eV to 3.17 eV. The morphology resembles flake-like structures which collapse when the dopant is introduced. The samples are found to be sensitive to CO2 gas. Undoped ZnO shows maximum sensitivity at 350 °C for higher concentration of CO2. Doped samples show maximum sensitivity at 200 °C for all CO2 concentrations i.e. from 500 ppm to 4000 ppm. Maximum sensitivity is achieved at temperatures 350 °C, 250 °C, 300 °C and 450 °C for the samples prepared using precursor solution of 0.1 M molarity.


1998 ◽  
Vol 13 (12) ◽  
pp. 3394-3398 ◽  
Author(s):  
Osamu Yamamoto ◽  
Tadashi Sasamoto ◽  
Michio Inagaki

Crystalline CdSe particles were prepared by keeping the precursor solutions at temperatures above 60 °C. It was essential to use sodium sulfite as a stabilizing agent for selenium ions and sodium dicarboxylate as a complexing agent for cadmium in the precursor solution. The principal crystalline phase of the samples obtained at 60 °C was a cubic zincblende-type phase, but those prepared at 80 °C coexisted with a hexagonal wurtzite-type phase. The ratio of cadmium to selenium in the samples decreased with an increase of the concentration of selenourea in the precursor solutions, irrespective of the kind of complex agents and the keeping time of the precursor solutions. The band-gap energy of CdSe with an atomic ratio (Cd/Se) of 1 showed a value of 1.74 eV, but that with the ratio of 2.3 gave a slightly smaller value of 1.42 eV.


2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.


2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>


Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 115
Author(s):  
Suhail Huzaifa Jaafar ◽  
Mohd Hafiz Mohd Zaid ◽  
Khamirul Amin Matori ◽  
Sidek Hj. Ab Aziz ◽  
Halimah Mohamed Kamari ◽  
...  

This research paper proposes the usage of a simple thermal treatment method to synthesis the pure and Eu3+ doped ZnO/Zn2SiO4 based composites which undergo calcination process at different temperatures. The effect of calcination temperatures on the structural, morphological, and optical properties of ZnO/Zn2SiO4 based composites have been studied. The XRD analysis shows the existence of two major phases which are ZnO and Zn2SiO4 crystals and supported by the finding in the FT-IR. The FESEM micrograph further confirms the existence of both ZnO and Zn2SiO4 crystal phases, with progress in the calcination temperature around 700–800 °C which affects the existence of the necking-like shape particle. Absorption humps discovered through UV-Vis spectroscopy revealed that at the higher calcination temperature effects for higher absorption intensity while absorption bands can be seen at below 400 nm with dropping of absorption bands at 370–375 nm. Two types of band gap can be seen from the energy band gap analysis which occurs from ZnO crystal and Zn2SiO4 crystal progress. It is also discovered that for Eu3+ doped ZnO/Zn2SiO4 composites, the Zn2SiO4 crystal (5.11–4.71 eV) has a higher band gap compared to the ZnO crystal (3.271–4.07 eV). While, for the photoluminescence study, excited at 400 nm, the emission spectra of Eu3+ doped ZnO/Zn2SiO4 revealed higher emission intensity compared to pure ZnO/Zn2SiO4 with higher calcination temperature exhibit higher emission intensity at 615 nm with 700 °C being the optimum temperature. The emission spectra also show that the calcination temperature contributed to enhancing the emission intensity.


2009 ◽  
Vol 289-292 ◽  
pp. 775-782 ◽  
Author(s):  
Zbigniew Jurasz ◽  
Krzysztof Adamaszek ◽  
Romuald Janik ◽  
Zbigniew Grzesik ◽  
Stanisław Mrowec

Detailed investigations of nonstoichiometry as well as chemical and self-diffusion in nickel oxide have shown that doubly ionised cation vacancies and electron holes are the predominant defects in this material. The present work is an attempt to demonstrate that aliovalent impurities (Cr, Al, Na and Li) may considerably influence the concentration of these defects and, consequently, the oxidation rate of nickel at high temperatures. It has been shown that small amounts of tri-valent impurities (Cr, Al) bring about an increase of the oxidation rate, while mono-valent ones (Li, Na) decrease the rate of oxidation. These phenomena may satisfactorily be explained in terms of a doping effect. All experiments have been carried out as a function of temperature (1373-1673 K) and oxygen pressure (1-105 Pa) and consequently, it was possible to determine the influence of impurities not only on the oxidation rate but also on the activation energy of reaction and its pressure dependence. The results of these investigations could again be elucidated in terms of doping effect.


Plasmonics ◽  
2021 ◽  
Author(s):  
Soumya Kannoth ◽  
Packia Selvam Irulappan ◽  
Sandip Dhara ◽  
Sankara Narayanan Potty

2015 ◽  
Vol 161 ◽  
pp. 275-280 ◽  
Author(s):  
Mohd. Arshad ◽  
Mohd. Meenhaz Ansari ◽  
Arham S. Ahmed ◽  
Pushpendra Tripathi ◽  
S.S.Z. Ashraf ◽  
...  

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