scholarly journals Giant Third-Order Nonlinear Response of Mixed Perovskite Nanocrystals

Materials ◽  
2022 ◽  
Vol 15 (1) ◽  
pp. 389
Author(s):  
Aya M. Abu Baker ◽  
Ganjaboy S. Boltaev ◽  
Mazhar Iqbal ◽  
Mikhail Pylnev ◽  
Nasser M. Hamdan ◽  
...  

Mixed (FAPbI3)0.92(MAPbBr3)0.08 perovskite thin films exhibit strong nonlinear optical responses, rendering them promising candidates for applications in photonics and optical communications. In this work, we present a systematic study on the ultrafast third-order nonlinear optical processes in mixed perovskite nanocrystals (NCs) by exploring the generation of third harmonic radiation and giant two-photon absorption-based photoluminescence (PL) when excited by femtosecond laser pulses of a 1030 nm central wavelength. A comparative analysis of the coherent third harmonic generation in the thin-film-containing perovskite nanocrystals has shown a 40× enhancement of the third harmonic signal compared to the signal generated in the pure quartz substrate. The cubic dependence of the third-nonlinear optical response of the (FAPbI3)0.92(MAPbBr3)0.08 perovskites on the intensity of the driving radiation was identified using broadband 38 femtosecond driving pulses. The positive nonlinear refractive index (γ = +1.4 × 10−12 cm2·W−1) is found to play an important role in improving the phase-matching conditions of the interacting pulses by generating a strong third order harmonic. The giant two-photon absorption (TPA)-assisted PL peak was monitored and a blue shift of the PL was obtained in the higher intensity range of the laser pulses, with the absorption coefficient β estimated to be~+7.0 cm·MW−1 at a 1030 nm laser wavelength.

2018 ◽  
Vol 20 (24) ◽  
pp. 16777-16785 ◽  
Author(s):  
Chao Wang ◽  
Yizhong Yuan

The typical J cyanine aggregate is experimentally and theoretically found to have potential applications involving two photon absorption.


2020 ◽  
Vol 22 (25) ◽  
pp. 14225-14235
Author(s):  
Xue-Lian Zheng ◽  
Ling Yang ◽  
Bo Shang ◽  
Ming-Qian Wang ◽  
Yingli Niu ◽  
...  

The third order nonlinear optical properties of Ih symmetry fullerenes increase exponentially with fullerene size. The two-dimensional two-photon absorption spectra for C60 and C240 have strong self-phase modulation responses.


Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3194
Author(s):  
Adrian Petris ◽  
Petronela Gheorghe ◽  
Tudor Braniste ◽  
Ion Tiginyanu

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.


2002 ◽  
Vol 209 (4-6) ◽  
pp. 461-466 ◽  
Author(s):  
I. Fuks-Janczarek ◽  
J-M. Nunzi ◽  
B. Sahraoui ◽  
I.V. Kityk ◽  
J. Berdowski ◽  
...  

1996 ◽  
Vol 16 (4) ◽  
pp. 245-253
Author(s):  
K. Sentrayan ◽  
E. Haque ◽  
A. Michael ◽  
V. S. Kushawaha

The photolysis of silane (SiH4) was carried out using the third harmonic of a Nd: YAG laser at 355 nm, at a fixed SiH4 pressure of 350 Torr, varying the laser energy fluence in the range of 30–300 Jcm-2. The emission spectra indicates that the photofragments formed are SiH2, SiH, Si, H2, and H. The (A1B1-X1A1) transitions at 552.7 nm, 525.3 nm, 505.6 nm, and 484.7 nm of SiH2 are due to a two photon absorption process. The (A2Δ-X2π) transitions of SiH at 425.9 nm, 418 nm, 414.2 nm, 412.8 nm and 395.6 nm are due to a three photon absorption process. The brownish white deposit on the cell windows indicates the presence of amorphous silicon (a:Si-H). The two atomic lines of Si(4s1P0→ 3p21D2) at 288.1 nm, and (4s3Pj→ 3P3Pj) at 251.6 nm are observed. The atomic Si transitions are due to a three photon absorption. We observed seven transitions due to molecular hydrogen at wavelengths 577.5 nm, 565.5 nm, 534.4 nm, 542.5 nm, 471 nm, 461.7 nm, and 455.4 nm. These bands are due to a four photon absorption proc6ss. In addition to the molecular bands we also observed hydrogen atomic lines Hβ, Hγ and Hδ.


2008 ◽  
Vol 108 (5) ◽  
pp. 3218-3224 ◽  
Author(s):  
Seetharam Shettigar ◽  
G. Umesh ◽  
K. Chandrasekharan ◽  
Ganesh Rai ◽  
B. Kalluraya

Sign in / Sign up

Export Citation Format

Share Document