scholarly journals An Overview of the Strategies for Tin Selenide Advancement in Thermoelectric Application

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1463
Author(s):  
Rosnita Md Aspan ◽  
Noshin Fatima ◽  
Ramizi Mohamed ◽  
Ubaidah Syafiq ◽  
Mohd Adib Ibrahim
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Wearable Devices ◽  
Future Research ◽  
Tin Selenide ◽  
Science Technology ◽  
Noticeable Improvement ◽  
Earth Abundant ◽  
Te Material ◽  
Low Dimensional

Chalcogenide, tin selenide-based thermoelectric (TE) materials are Earth-abundant, non-toxic, and are proven to be highly stable intrinsically with ultralow thermal conductivity. This work presented an updated review regarding the extraordinary performance of tin selenide in TE applications, focusing on the crystal structures and their commonly used fabrication methods. Besides, various optimization strategies were recorded to improve the performance of tin selenide as a mid-temperature TE material. The analyses and reviews over the methodologies showed a noticeable improvement in the electrical conductivity and Seebeck coefficient, with a noticeable decrement in the thermal conductivity, thereby enhancing the tin selenide figure of merit value. The applications of SnSe in the TE fields such as microgenerators, and flexible and wearable devices are also discussed. In the future, research in low-dimensional TE materials focusing on nanostructures and nanocomposites can be conducted with the advancements in material science technology as well as microtechnology and nanotechnology.

scholarly journals Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal

2021 ◽  
Author(s):  
Chongjian Zhou ◽  
Yong Kyu Lee ◽  
Yuan Yu ◽  
Sejin Byun ◽  
Zhong-Zhen Luo ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
High Performance ◽  
Figure Of Merit ◽  
Waste Heat ◽  
Electric Energy ◽  
Cost Effective ◽  
Tin Selenide ◽  
Tin Oxides ◽  
Thermally Conductive

AbstractThermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2–2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m–1 K–1 at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

2021 ◽  
Author(s):  
Lijun Zhao ◽  
Mingyuan Wang ◽  
Jian Yang ◽  
Jiabin Hu ◽  
Yuan Zhu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Tem Analysis ◽  
Amorphous Phases ◽  
Element Doping ◽  
Bi Doping ◽  
Earth Abundant ◽  
Te Material ◽  
P Type ◽  
Constituent Elements

Abstract Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally-friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1 − xBixSe4 (x = 0-0.04) samples were fabricated through melting and hot pressing (HP) process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2 − xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWcm− 1K− 2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm− 1K− 1 and thermal conductivity (κtot) of ~ 0.62 Wm− 1K− 1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times more than that of pristine Cu3SbSe4. This work shows that isovalent heavy-element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.

scholarly journals Structural Modularization of Cu2Te Leading to High Thermoelectric Performance near the Mott-Ioffe-Regel Limit

2021 ◽  
Author(s):  
Kunpeng Zhao ◽  
Chenxi Zhu ◽  
Min Zhu ◽  
Hongyi Chen ◽  
Jindan Lei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Energy Conversion ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Figure Of Merit ◽  
Rational Design ◽  
Absolute Temperature ◽  
Band Edge ◽  
Total Thermal Conductivity ◽  
Te Material

Abstract To date, thermoelectric materials research stays focused on optimizing the material’s band edge details and disfavors low mobility. Here, we shifts the paradigm from the band edge to the mobility edge, exploring high thermoelectricity near the border of band conduction and hopping. Through co-alloying iodine and sulfur, we modularize the plain crystal structure of liquid-like thermoelectric material Cu2Te with mosaic nanodomains and the highly size mismatched S/Te sublattice that chemically quenches the Cu sublattice and drives the electronic states from itinerant to localized. A state-of-the-art figure of merit of 1.4 is obtained at 850 K for Cu2(S0.4I0.1Te0.5); and remarkably, it is achieved near the Mott-Ioffe-Regel limit unlike mainstream thermoelectric materials that are band conductors. Broadly, pairing structural modularization with the high performance near the Mott-Ioffe-Regel limit paves an important new path towards the rational design of high-performance thermoelectric materials. Thermoelectric (TE) material-based energy conversion technology has attracted increasing global attention in virtue of the technical merits such as no moving parts, no greenhouse emission, noiseless, friendliness for miniaturization, and reliability.1–4 Based on the Seebeck and Peltier effects, thermoelectricity enables a direct energy conversion between temperature difference and electricity.5, 6 The performance of a TE material is primarily gauged by the material’s figure of merit, zT = S2T/ρκ, where S is the Seebeck coefficient, T is the absolute temperature, ρ is the electrical resistivity, and κ is the total thermal conductivity (consisting of the lattice thermal conductivity κL and the electronic thermal conductivity κE).

Carrier Pocket Engineering for the Design of Low Dimensional Thermoelectrics with High Z3DT

2000 ◽  
Vol 626 ◽  
Author(s):  
Takaaki Koga ◽  
Stephen B. Cronin ◽  
Mildred S. Dresselhaus
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Engineering Model ◽  
Thermoelectric Figure ◽  
Model Calculations ◽  
Low Dimensional ◽  
Good Agreement

ABSTRACTThe concept of carrier pocket engineering applied to Si/Ge superlattices is tested experimentally. A set of strain-symmetrized Si(20Å)/Ge(20Å) superlattice samples were grown by MBE and the Seebeck coefficient S, electrical conductivity σ, and Hall coefficient were measured in the temperature range between 4K and 400K for these samples. The experimental results are in good agreement with the carrier pocket engineering model for temperatures below 300K. The thermoelectric figure of merit for the entire superlattice, Z3DT, is estimated from the measured S and σ, and using an estimated value for the thermal conductivity of the superlattice. Based on the measurements of these homogeneously doped samples and on model calculations, including the detailed scattering mechanisms of the samples, projections are made for δ-doped and modulation-doped samples [(001) oriented Si(20Å)/Ge(20Å) superlattices] to yield Z3DT ≈ 0.49 at 300K.

scholarly journals Microwave Irradiation to Produce High Performance Thermoelectric Material Based on Al Doped ZnO Nanostructures

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 610
Author(s):  
Neazar Baghdadi ◽  
Numan Salah ◽  
Ahmed Alshahrie ◽  
Kunihito Koumoto
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Microwave Irradiation ◽  
High Performance ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Zno Nanostructures ◽  
Al Doping ◽  
Doped Zno ◽  
Te Material

Microwave irradiation is found to be effective to provide highly crystalline nanostructured materials. In this work, this technique has been used to produce highly improved thermoelectric (TE) material based on aluminum (Al) doped zinc oxide (ZnO) nanostructures (NSs). The effect of Al dopant at the concentration range 0.5–3 mol % on the structural and TE properties has been investigated in more details. The optimum concentration of Al for better TE performance is found to be 2 mol %, which could significantly increase the electrical conductivity and reduce the thermal conductivity of ZnO NSs and thus enhance the TE performance. This concentration showed almost metallic conductivity behavior for ZnO NSs at low temperatures, e.g., below 500 K. The electrical conductivity reached 400 S/m at room temperature, which is around 200 times greater than the value recorded for the pure ZnO NSs. Remarkably, the measured room temperature thermal conductivity of the microwave synthesized ZnO NSs was very low, which is around 4 W/m·K. This value was further reduced to 0.5 W/m·K by increasing the Al doping to 3 mol %. The figure of merit recorded 0.028 at 675 K, which is 15 times higher than that of the pure ZnO NSs. The output power of a single leg module made of 2 mol % Al doped ZnO NSs was 3.7 µW at 485 K, which is higher by 8 times than that of the pure sample. These results demonstrated the advantage of the microwave irradiation rout as a superior synthetic technique for producing and doping promising TE nanomaterials like ZnO NSs.

Thermal Diffusivity Characterization of Bi2Te3 Nanowires Array Inside Amorphous Alumina Template

2002 ◽  
Author(s):  
Diana-Andra Borca-Tasciuc ◽  
Gang Chen ◽  
Marisol S. Martin-Gonzales ◽  
Amy L. Prieto ◽  
Angelica Stacy ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Diffusivity ◽  
Figure Of Merit ◽  
Large Contribution ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Alumina Template ◽  
Amorphous Alumina ◽  
Low Dimensional

In the recent years there has been an increasing interest in low-dimensional thermoelectric materials such as superlattices, quantum dots and nanowires [1,2,3]. An enhancement in thermoelectric figure-of-merit, Z=σα2/k, where α is the Seebeck coefficient, σ is electrical conductivity, and k is the thermal conductivity, is predicted due to increased density of states near Fermi level [4]. A large contribution to the enhancement of thermoelectric figure-of-merit in low-dimensional systems may come from thermal conductivity reduction due to increased scattering of heat carriers from interfaces. In this light, we are interested in thermal properties of Bi2Te3 nanowires and carried out thermal diffusivity characterization of these nanowires embedded in an amorphous alumina template.

Remarkable electron and phonon band structures lead to a high thermoelectric performance ZT > 1 in earth-abundant and eco-friendly SnS crystals

2018 ◽  
Vol 6 (21) ◽  
pp. 10048-10056 ◽  
Author(s):  
Wenke He ◽  
Dongyang Wang ◽  
Jin-Feng Dong ◽  
Yang Qiu ◽  
Liangwei Fu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Transport Properties ◽  
Electrical Transport ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Electrical Transport Properties ◽  
Band Structures ◽  
Low Thermal Conductivity ◽  
Earth Abundant ◽  
High Figure

Enhanced electrical transport properties and low thermal conductivity lead to high figure of merit (ZT) over the whole temperature range in Na-doped SnS crystals.

Thermoelectric Properties of PbSr(Se,Te)-Based Low Dimensional Structures

2000 ◽  
Vol 626 ◽  
Author(s):  
Harald Beyer ◽  
Joachim Nurnus ◽  
Harald Böttner ◽  
Armin Lambrecht ◽  
Lothar Schmitt ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Evaluation Method ◽  
Interband Transition ◽  
Multiple Quantum Well ◽  
Calculated Data ◽  
Multiple Quantum ◽  
Ir Transmission ◽  
Low Dimensional

ABSTRACTThermoelectric properties of low dimensional structures based on PbTe/PbSrTe-multiple quantum-well (MQW)-structures with regard to the structural dimensions, doping profiles and levels are presented. Interband transition energies and barrier band-gap are determined from IR-transmission spectra and compared with Kronig-Penney calculations. The influence of the data evaluation method to obtain the 2D power factor will be discussed. The thermoelectrical data of our layers show a more modest enhancement in the power factor σS2 compared with former publications and are in good agreement with calculated data from Broido et al. [5]. The maximum allowed doping level for modulation doped MQW structures is determined. Thermal conductivity measurements show that a ZT enhancement can be achieved by reducing the thermal conductivity due to interface scattering. Additionally promising lead chalcogenide based superlattices for an increased 3D figure of merit are presented.

scholarly journals Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aastha Vasdev ◽  
Moinak Dutta ◽  
Shivam Mishra ◽  
Veerpal Kaur ◽  
Harleen Kaur ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Direct Evidence ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
Pdf Analysis ◽  
Ferroelectric Transition Temperature

AbstractA remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te , a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250–300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te . The length scale of the $${\text {Ge}}^{2+}$$ Ge 2 + off-centering is 0.25–0.10 Å near the room temperatures (250–300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te .

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