scholarly journals A Novel Bidirectional AlGaN/GaN ESD Protection Diode

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 135
Author(s):  
Bin Yao ◽  
Yijun Shi ◽  
Hongyue Wang ◽  
Xinbin Xu ◽  
Yiqiang Chen ◽  
...  

Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the ESD robustness of a GaN power system. In this study, an AlGaN/GaN ESD protection diode with bidirectional clamp capability was proposed and investigated. Through the combination of two floating gate electrodes and two pF-grade capacitors connected in parallel between anode or cathode electrodes and the adjacent floating gate electrodes (CGA (CGC)), the proposed diode could be triggered by a required voltage and possesses a high secondary breakdown current (IS) in both forward and reverse transient ESD events. Based on the experimental verification, it was found that the bidirectional triggering voltages (Vtrig) and IS of the proposed diode were strongly related to CGA (CGC). With CGA (CGC) increasing from 5 pF to 25 pF, Vtrig and IS decreased from ~18 V to ~7 V and from ~7 A to ~3 A, respectively. The diode’s high performance demonstrated a good reference for the ESD design of a GaN power system.

2021 ◽  
pp. 2100599
Author(s):  
Lihua He ◽  
Enlong Li ◽  
Weixin He ◽  
Yujie Yan ◽  
Shuqiong Lan ◽  
...  

2011 ◽  
Vol 131 (10) ◽  
pp. 664-667
Author(s):  
Tomoyuki CHINUKI ◽  
Shunsuke KAWACHI ◽  
Keisuke HATTORI ◽  
Junpei BABA

2000 ◽  
Author(s):  
Peter J. Loftus ◽  
Robert K. Sievers

2021 ◽  
Vol 52 (S1) ◽  
pp. 170-174
Author(s):  
Hennrik Schmidt ◽  
Harald Koestenbauer ◽  
Dominik Lorenz ◽  
Christian Linke ◽  
Enrico Franzke ◽  
...  

1999 ◽  
Vol 74 (14) ◽  
pp. 1996-1998 ◽  
Author(s):  
Wen-Chau Liu ◽  
Wen-Lung Chang ◽  
Hsi-Jen Pan ◽  
Kuo-Hui Yu ◽  
Shung-Ching Feng ◽  
...  

2021 ◽  
Vol 237 ◽  
pp. 02023
Author(s):  
Bo Wang

Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the modeling method using planar gate structure will inevitably have great deviation. Based on the characteristics of trench gate structure and model analysis coordinate system, the base region is divided into PNP and PIN by considering the two-dimensional effect of carriers. According to whether the trench of PIN part can be covered by depletion layer of PNP part, the specific base region current is analyzed. Finally, simulation and experimental verification are carried out.


2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.


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