scholarly journals Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2302
Author(s):  
Andrew I. Yakimov ◽  
Victor V. Kirienko ◽  
Aleksei A. Bloshkin ◽  
Dmitrii E. Utkin ◽  
Anatoly V. Dvurechenskii
Keyword(s):  
Wavelength Range ◽  
Near Infrared ◽  
Normal Incidence ◽  
Hole Array ◽  
Si Quantum Dot ◽  
Optical Modes ◽  
Photon Trapping ◽  
Integrated Silicon Photonics ◽  
Hole Arrays ◽  
Pin Photodiodes

Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 μm on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at λ=1.2 μm and by 34 times at λ≈1.6 μm relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260–1360 nm) up to the L-band (1565–1625 nm).

Scalable Nanomanufacturing of Metasurfaces Using Nanosphere Photolithography

2014 ◽  
Author(s):  
Jacob S. Wilson ◽  
Wipula P. R. Liyanage ◽  
Michelle L. Gegel ◽  
Manashi Nath ◽  
Edward C. Kinzel
Keyword(s):  
Normal Incidence ◽  
Hole Array ◽  
Frequency Selective Surfaces ◽  
Metal Elements ◽  
Hexagonal Close Packed ◽  
Frequency Selective ◽  
Self Assembled ◽  
Hole Arrays ◽  
Lift Off ◽  
Microsphere Array

We report on using Nanosphere Photolithography (NPL) for submicron patterning of Frequency Selective Surfaces (FSS). NPL is a combination of two techniques; colloidal nanolithography — where nanospheres form a self-assembled hexagonal close-packed (HCP) array when dispensed on a surface, and photonic jets — which are created when light is incident onto a microsphere in contact with a surface. NPL creates a mask-free HCP hole array in the photoresist. This pattern can be used with evaporation and lift-off to create an array of antenna elements, constituting the FSS. Alternatively, electrodeposition techniques can be used to deposit the metal elements. The later is particularly appealing as it lends itself to reel-to-reel fabrication techniques. Finally, we demonstrate that geometries other than simple hole arrays can be patterned in the photoresist by exposing the microsphere array with off normal incidence light.

scholarly journals A Thermopile Device with Sub-Wavelength Hole Arrays by CMOS-MEMS Technology

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 180
Author(s):  
Chi-Feng Chen ◽  
Chih-Hsiung Shen ◽  
Yun-Ying Yeh
Keyword(s):  
Fdtd Method ◽  
Elliptical Hole ◽  
Oxide Semiconductor ◽  
Active Area ◽  
Hole Array ◽  
Cmos Mems ◽  
Simulation Results ◽  
Hole Arrays ◽  
Hole Structure ◽  
Sub Wavelength

A thermopile device with sub-wavelength hole array (SHA) is numerically and experimentally investigated. The infrared absorbance (IRA) effect of SHAs in active area of the thermopile device is clearly analyzed by the finite-difference time-domain (FDTD) method. The prototypes are manufactured by the 0.35 μm 2P4M complementary metal-oxide-semiconductor micro-electro-mechanical-systems (CMOS-MEMS) process in Taiwan semiconductor manufacturing company (TSMC). The measurement results of those prototypes are similar to their simulation results. Based on the simulation technology, more sub-wavelength hole structural effects for IRA of such thermopile device are discussed. It is found from simulation results that the results of SHAs arranged in a hexagonal shape are significantly better than the results of SHAs arranged in a square and the infrared absorption efficiencies (IAEs) of specific asymmetric rectangle and elliptical hole structure arrays are higher than the relatively symmetric square and circular hole structure arrays. The overall best results are respectively up to 3.532 and 3.573 times higher than that without sub-wavelength structure at the target temperature of 60 °C when the minimum structure line width limit of the process is ignored. Obviously, the IRA can be enhanced when the SHAs are considered in active area of the thermopile device and the structural optimization of the SHAs is absolutely necessary.

Hybridization-sensitive fluorescence control in the near-infrared wavelength range

2011 ◽  
Vol 9 (11) ◽  
pp. 4199 ◽  
Author(s):  
Shuji Ikeda ◽  
Hiroyuki Yanagisawa ◽  
Akiko Nakamura ◽  
Dan Ohtan Wang ◽  
Mizue Yuki ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Near Infrared ◽  
Infrared Wavelength

scholarly journals Extension of the Measurable Wavelength Range for a Near-Infrared Spectrometer Using a Plasmonic Au Grating on a Si Substrate

Micromachines ◽  
2019 ◽  
Vol 10 (6) ◽  
pp. 403 ◽  
Author(s):  
Yu Suido ◽  
Yosuke Yamamoto ◽  
Gaulier Thomas ◽  
Yoshiharu Ajiki ◽  
Tetsuo Kan
Keyword(s):  
Wavelength Range ◽  
Near Infrared ◽  
Generalized Inverse ◽  
Incidence Angle ◽  
Spectroscopic Characteristics ◽  
Generalized Inverse Matrix ◽  
Infrared Spectrometer ◽  
Scanning Range ◽  
Near Infrared Spectrometer ◽  
Derivation Procedure

In this paper, we proposed near-infrared spectroscopy based on a Si photodetector equipped with a gold grating and extended the measurable wavelength range to cover 1200–1600 nm by improving a spectrum derivation procedure. In the spectrum derivation, photocurrent data during alteration of the incidence angle of the measured light were converted using a responsivity matrix R, which determines the spectroscopic characteristics of the photodetector device. A generalized inverse matrix of R was used to obtain the spectrum and to fit a situation where multiple surface plasmon resonance (SPR) peaks appeared in the scanning range. When light composed of two wavelengths, 1250 nm and 1450 nm, was irradiated, the two wavelengths were distinctively discriminated using the improved method.

scholarly journals Infrared Absorption Efficiency Enhancement of the CMOS Compatible Thermopile by the Special Subwavelength Hole Arrays

2020 ◽  
Vol 10 (8) ◽  
pp. 2966 ◽  
Author(s):  
Yun-Ying Yeh ◽  
Chih-Hsiung Shen ◽  
Chi-Feng Chen
Keyword(s):  
Infrared Absorption ◽  
Absorption Efficiency ◽  
Hole Array ◽  
Rectangular Hole ◽  
Efficiency Enhancement ◽  
Cmos Compatible ◽  
Subwavelength Hole Arrays ◽  
Hole Arrays ◽  
Difference Time ◽  
Rectangular Columns

The infrared absorption efficiency (IAE) enhancement of the complementary-metal-oxide-semiconductorCMOS compatible thermopile with special subwavelength hole arrays in an active area was numerically investigated by the finite-difference time-domain method. It was found that the absorption efficiency of that thermopile was enhanced when the subwavelength rectangular-hole array added extra rectangular-columnar or ellipse-columnar structures in the hole array. The simulation results show that the IAEs of the better cases for the three types of rectangular columns and three ellipse columns were increased by 14.4% and 15.2%, respectively. Such special subwavelength hole arrays can be improved by the IAE of the CMOS compatible thermopile.

scholarly journals Two-photon absorption in penicillamine capped CdS tetrapods

2017 ◽  
Vol 5 (7) ◽  
pp. 1724-1729 ◽  
Author(s):  
D. Wawrzyńczyk
Keyword(s):  
Wavelength Range ◽  
Near Infrared ◽  
Water Soluble ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Semiconducting Nanoparticles ◽  
Two Photon ◽  
Infrared Excitation

Synthesized penicillamine stabilized CdS tetrapods showed two-photon absorption in a wavelength range between 600 and 850 nm, and strong two-photon excited emission upon near infrared excitation. These water soluble colloidal, semiconducting nanoparticles show potential for applications in nonlinear bioimaging.

scholarly journals Rigorous coupled-wave analysis of absorption enhancement in vertically illuminated silicon photodiodes with photon-trapping hole arrays

Nanophotonics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1747-1756 ◽  
Author(s):  
Jun Gou ◽  
Hilal Cansizoglu ◽  
Cesar Bartolo-Perez ◽  
Soroush Ghandiparsi ◽  
Ahmed S. Mayet ◽  
...  
Keyword(s):  
Absorption Enhancement ◽  
Hole Array ◽  
Wave Analysis ◽  
Si Substrates ◽  
Back Reflection ◽  
Rigorous Coupled Wave Analysis ◽  
Hole Arrays ◽  
Rigorous Coupled Wave ◽  
Soi Substrates ◽  
Coupled Wave

AbstractIn this paper, we present a rigorous coupled-wave analysis (RCWA) of absorption enhancement in all-silicon (Si) photodiodes with integrated hole arrays of different shapes and dimensions. The RCWA method is used to analyze the light propagation and trapping in the photodiodes on both Si-on-insulator (SOI) and bulk Si substrates for the datacom wavelength at about 850 nm. Our calculation and measurement results show that funnel-shaped holes with tapered sidewalls lead to low back-reflection. A beam of light undergoes a deflection subsequent to the diffraction in the hole array and generates laterally propagating waves. SOI substrates with oxide layers play an important role in reducing the transmission loss, especially for deflected light with higher-order diffraction from the hole array. Owing to laterally propagating modes and back-reflection on the SiO2 film, light is more confined in the thin Si layer on the SOI substrates compared to that on the bulk Si substrates. Experimental results based on fabricated devices support the predictions of the RCWA. Devices are designed with a 2-μm-thick intrinsic layer, which ensures ultrafast impulse response (full-width at half-maximum) of 30 ps. Measurements for integrated photodiodes with funnel-shaped holes indicate an enhanced external quantum efficiency of more than 55% on the SOI substrates. This represents more than 500% improvement compared to photodiodes without integrated phototrapping nanoholes.

scholarly journals Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering

2020 ◽  
Vol 6 (31) ◽  
pp. eabb0576
Author(s):  
Ajit K. Katiyar ◽  
Kean You Thai ◽  
Won Seok Yun ◽  
JaeDong Lee ◽  
Jong-Hyun Ahn
Keyword(s):  
Wavelength Range ◽  
Near Infrared ◽  
Three Dimensional ◽  
Strain Engineering ◽  
Obstacle Detection ◽  
Optical Bandgap ◽  
Engineering Material ◽  
Infrared Spectral Range ◽  
Infrared Spectral ◽  
Microelectronics Industry

Silicon has been widely used in the microelectronics industry. However, its photonic applications are restricted to visible and partial near-infrared spectral range owing to its fundamental optical bandgap (1.12 eV). With recent advances in strain engineering, material properties, including optical bandgap, can be tailored considerably. This paper reports the strain-induced shrinkage in the Si bandgap, providing photosensing well beyond its fundamental absorption limit in Si nanomembrane (NM) photodetectors (PDs). The Si-NM PD pixels were mechanically stretched (biaxially) by a maximum strain of ~3.5% through pneumatic pressure–induced bulging, enhancing photoresponsivity and extending the Si absorption limit up to 1550 nm, which is the essential wavelength range of the lidar sensors for obstacle detection in self-driving vehicles. The development of deformable three-dimensional optoelectronics via gas pressure–induced bulging also facilitated the realization of unique device designs with concave and convex hemispherical architectures, which mimics the electronic prototypes of biological eyes.

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