scholarly journals Comparison of Plasma Deposition of Carbon Nanomaterials Using Various Polymer Materials as a Carbon Atom Source

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 246
Author(s):  
Alenka Vesel ◽  
Rok Zaplotnik ◽  
Gregor Primc ◽  
Domen Paul ◽  
Miran Mozetič

Carbon nanowalls are promising materials for various electrochemical devices due to their chemical inertness, desirable electrical conductivity, and excellent surface-to-mass ratio. Standard techniques, often based on plasma-assisted deposition using gaseous precursors, enable the synthesis of top-quality carbon nanowalls, but require long deposition times which represents a serious obstacle for mass applications. Here, an alternative deposition technique is presented. The carbon nanowalls were synthesized on titanium substrates using various polymers as solid precursors. A solid precursor and the substrate were mounted into a low-pressure plasma reactor. Plasma was sustained by an inductively coupled radiofrequency discharge in the H-mode at the power of 500 W. Spontaneous growth of carbon nanomaterials was observed for a variety of polymer precursors. The best quality of carbon nanowalls was obtained using aliphatic polyolefins. The highest growth rate of a thin film of carbon nanowalls of about 200 nm/s was observed. The results were explained by different degradation mechanisms of polymers upon plasma treatment and the surface kinetics.

2000 ◽  
Vol 76 (18) ◽  
pp. 2508-2510
Author(s):  
Joachim Walewski ◽  
Jussi Larjo ◽  
Rolf Hernberg

2018 ◽  
Vol 9 ◽  
pp. 1895-1905 ◽  
Author(s):  
André Giese ◽  
Sebastian Schipporeit ◽  
Volker Buck ◽  
Nicolas Wöhrl

In this work, the deposition of carbon nanowalls (CNWs) by inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) is investigated. The CNWs are electrically conducting and show a large specific surface area, which is a key characteristic to make them interesting for sensors, catalytic applications or energy-storage systems. It was recently discovered that CNW films can be deposited by the use of the single-source metal-organic precursor aluminium acetylacetonate. This precursor is relatively unknown in combination with the ICP-PECVD deposition method in literature and, thus, based on our previous publication is further investigated in this work to better understand the influence of the various deposition parameters on the growth. Silicon, stainless steel, nickel and copper are used as substrate materials. The CNWs deposited are characterized by scanning electron microscopy (SEM), Raman spectroscopy and Auger electron spectroscopy (AES). The combination of bias voltage, the temperature of the substrate and the substrate material had a strong influence on the morphology of the graphitic carbon nanowall structures. With regard to these results, a first growth model for the deposition of CNWs by ICP-PECVD and aluminium acetylacetonate is proposed. This model explains the formation of four different morphologies (nanorods as well as thorny, straight and curled CNWs) by taking the surface diffusion into account. The surface diffusion depends on the particle energies and the substrate material and thus explains the influence of these parameters.


2002 ◽  
Vol 91 (9) ◽  
pp. 6027-6033 ◽  
Author(s):  
Lance Delzeit ◽  
Ian McAninch ◽  
Brett A. Cruden ◽  
David Hash ◽  
Bin Chen ◽  
...  

AIChE Journal ◽  
2014 ◽  
Vol 60 (10) ◽  
pp. 3647-3664 ◽  
Author(s):  
Sangeeta B. Punjabi ◽  
Sunil N. Sahasrabudhe ◽  
S. Ghorui ◽  
A. K. Das ◽  
Narendra K. Joshi ◽  
...  

2010 ◽  
Vol 1249 ◽  
Author(s):  
George Andrew Antonelli ◽  
Gengwei Jiang ◽  
Mandyam Sriram ◽  
Kaushik Chattopadhyay ◽  
Wei Guo ◽  
...  

AbstractOrganosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.


1996 ◽  
Vol 434 ◽  
Author(s):  
U. Müller ◽  
R. Hauert

AbstractAmorphous hydrogenated carbon films are of technological interest as protection coatings due to their special properties such as high hardness, chemical inertness, electrical insulation and infrared transparency. However, some applications still suffer from the poor thermal stability and adhesion problems of these coatings. To ensure good adhesion, especially on hardened steels and non-carbide forming substrates, an extra interlayer has to be deposited first. Often a silicon containing interlayer, Si-a-C:H for example, is used for this purpose. This Si-a-C:H interface layer was deposited by rf plasma deposition from tetramethylsilane. Then a-C:H films containing Si-O with a varying silicon content were produced from a mixture of acetylene and hexamethyldisiloxane. The structural changes upon annealing of these films were investigated using Raman spectroscopy. The analysis of the development of the different peaks upon annealing temperature reveals the transition from the amorphous structure to the more graphitic-like structure. This transition temperature increases by as much as 100°C when silicon is incorporated into the DLC film. However, when Si-O is incorporated instead of only silicon the same increase in temperature stability is observed.


2017 ◽  
Vol 8 ◽  
pp. 1043-1048 ◽  
Author(s):  
Sulaiman Al-Mayman ◽  
Ibrahim AlShunaifi ◽  
Abdullah Albeladi ◽  
Imed Ghiloufi ◽  
Saud Binjuwair

Fly ash from power plants is very toxic because it contains heavy metals. In this study fly ash was treated with a thermal plasma. Before their treatment, the fly ash was analyzed by many technics such as X-ray fluorescence, CHN elemental analysis, inductively coupled plasma atomic emission spectroscopy and scanning electron microscopy. With these technics, the composition, the chemical and physical proprieties of fly ash are determined. The results obtained by these analysis show that fly ash is mainly composed of carbon, and it contains also sulfur and metals such as V, Ca, Mg, Na, Fe, Ni, and Rh. The scanning electron microscopy analysis shows that fly ash particles are porous and have very irregular shapes with particle sizes of 20–50 μm. The treatment of fly ash was carried out in a plasma reactor and in two steps. In the first step, fly ash was treated in a pyrolysis/combustion plasma system to reduce the fraction of carbon. In the second step, the product obtained by the combustion of fly ash was vitrified in a plasma furnace. The leaching results show that the fly ash was detoxified by plasma vitrification and the produced slag is amorphous and glassy.


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