scholarly journals Fabrication of Low-Fouling Surfaces on Alkyne-Functionalized Poly-(p-xylylenes) Using Click Chemistry

Polymers ◽  
2022 ◽  
Vol 14 (2) ◽  
pp. 225
Author(s):  
Pei-Ju Chen ◽  
Hsien-Yeh Chen ◽  
Wei-Bor Tsai
Keyword(s):  
Thin Films ◽  
Conjugated Polymers ◽  
Click Chemistry ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Universal Method ◽  
Surface Immobilization ◽  
Poly Ethylene Glycol ◽  
Wide Range ◽  
Poly Ethylene

A facial, versatile, and universal method that breaks the substrate limits is desirable for antifouling treatment. Thin films of functional poly-p-xylylenes (PPX) that are deposited using chemical vapor deposition (CVD) provide a powerful platform for surface immobilization of molecules. In this study, we prepared an alkyne-functionalized PPX coating on which poly (sulfobetaine methacrylate-co-Az) could be conjugated via click chemistry. We found that the conjugated polymers were very stable and inhibited cell adhesion and protein adsorption effectively. The same conjugation strategy could also be applied to conjugate azide-containing poly (ethylene glycol) and poly (NIPAAm). The results indicate that our method provides a simple and robust tool for fabricating antifouling surfaces on a wide range of substrates using CVD technology of functionalized poly (p-xylylenes) for biosensor, diagnostics, immunoassay, and other biomaterial applications.

Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films

1994 ◽  
Vol 9 (6) ◽  
pp. 1333-1336 ◽  
Author(s):  
Jiming Zhang ◽  
Gregory T. Stauf ◽  
Robin Gardiner ◽  
Peter Van Buskirk ◽  
John Steinbeck
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Liquid Solution ◽  
Organic Chemical ◽  
Starting Compound ◽  
Wide Range ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

MgAl2O4 films have been grown epitaxially on both Si(100) and MgO(100) by a novel single source metal-organic chemical vapor deposition (MOCVD) process. A single molecular source reagent [magnesium dialuminum isopropoxide, MgAl2(OC3H7)8] having the desired Mg: Al ratio was dissolved in a liquid solution and flash-vaporized into the reactor. Both thermal and plasma-enhanced MOCVD were used to grow epitaxial MgAl2O4 thin films. The Mg: Al ratio in the deposited films was the same as that of the starting compound (Mg: Al = 1:2) over a wide range of deposition conditions. The deposition temperature required for the formation of crystalline spinel was found to be significantly reduced and crystallinity was much improved on Si by using a remote plasma-enhanced MOCVD process. The epitaxial nature of the MgAl2O4 films was established by x-ray pole figure analysis.

Preparation of MoS2 thin films by chemical vapor deposition

1994 ◽  
Vol 9 (6) ◽  
pp. 1474-1483 ◽  
Author(s):  
Woo Y. Lee ◽  
Theodore M. Besmann ◽  
Michael W. Stott
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Thermodynamic Analysis ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Precursor Concentration ◽  
Wide Range ◽  
Thermochemical Stability

The chemical vapor deposition (CVD) of MoS2 by reaction of H2S with molybdenum halides was determined to be thermodynamically favored over a wide range of temperature, pressure, and precursor concentration conditions as long as excess H2S was available. The thermochemical stability of H2S, MoF6, and MoCI5 was also assessed to address their suitability as precursors for the CVD of MoS2. The results from the thermodynamic analysis were used as guidance in the deposition of MoS2 thin films from MoF6 and H2S. The (002) basal planes of MoS2 films deposited above 700 K were preferentially oriented perpendicular to the substrate surface.

scholarly journals Synthesis of amphiphilic poly(ethylene glycol)-block-poly(methyl methacrylate) containing trityl ether acid cleavable junction group and its self-assembly into ordered nanoporous thin films

e-Polymers ◽  
2020 ◽  
Vol 20 (1) ◽  
pp. 111-121
Author(s):  
Yinghua Qi ◽  
Akash Nathani ◽  
Jianxin Zhang ◽  
Zhengji Song ◽  
Chandra Shekhar Sharma ◽  
...  
Keyword(s):  
Thin Films ◽  
Ethylene Glycol ◽  
Methyl Methacrylate ◽  
Diblock Copolymers ◽  
Poly Ethylene Glycol ◽  
Ether Linkage ◽  
Poly Methyl Methacrylate ◽  
Acid Cleavage ◽  
Wide Range ◽  
Poly Ethylene

AbstractA strategy for the synthesis of well defined poly(ethylene glycol)-block-poly(methyl methacrylate) diblock copolymers containing trityl ether acid cleavable junctions is demonstrated. This approach is achieved by using a combination of poly(ethylene glycol) macroinitiator containing a trityl ether end group, which is susceptible to acid cleavage, and atom transfer radical polymerization technique. The trityl ether linkage between blocks can be readily cleaved in solution or in solid phase under very mild acid condition, which has been confirmed by 1H NMR. These diblock copolymers have been used to successfully fabricate nanoporous thin films by acid cleavage of trityl ether junction followed by complete removal of poly(ethylene glycol) block. The fabricated nanoporous thin films may have a wide range of application such as Recessed Nanodisk-array electrode (RNE) or as a template to fabricate nanoelectrode array for senor applications.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band
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