scholarly journals A Thermopile Device with Sub-Wavelength Hole Arrays by CMOS-MEMS Technology

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 180
Author(s):  
Chi-Feng Chen ◽  
Chih-Hsiung Shen ◽  
Yun-Ying Yeh

A thermopile device with sub-wavelength hole array (SHA) is numerically and experimentally investigated. The infrared absorbance (IRA) effect of SHAs in active area of the thermopile device is clearly analyzed by the finite-difference time-domain (FDTD) method. The prototypes are manufactured by the 0.35 μm 2P4M complementary metal-oxide-semiconductor micro-electro-mechanical-systems (CMOS-MEMS) process in Taiwan semiconductor manufacturing company (TSMC). The measurement results of those prototypes are similar to their simulation results. Based on the simulation technology, more sub-wavelength hole structural effects for IRA of such thermopile device are discussed. It is found from simulation results that the results of SHAs arranged in a hexagonal shape are significantly better than the results of SHAs arranged in a square and the infrared absorption efficiencies (IAEs) of specific asymmetric rectangle and elliptical hole structure arrays are higher than the relatively symmetric square and circular hole structure arrays. The overall best results are respectively up to 3.532 and 3.573 times higher than that without sub-wavelength structure at the target temperature of 60 °C when the minimum structure line width limit of the process is ignored. Obviously, the IRA can be enhanced when the SHAs are considered in active area of the thermopile device and the structural optimization of the SHAs is absolutely necessary.

2019 ◽  
Vol 9 (23) ◽  
pp. 5118 ◽  
Author(s):  
Chih-Hsiung Shen ◽  
Yun-Ying Yeh ◽  
Chi-Feng Chen

Besides the application of the photonic crystal for the photodetector in the visible range, the infrared devices proposed with subwavelength structure are numerically and experimentally investigated thoroughly for infrared radiation sensing in this research. Several complementary metal oxide semiconductor (CMOS) compatible thermopiles with subwavelength structure (SWS) are proposed and simulated by the FDTD method. The proposed thermopiles are fabricated by the 0.35 μm 2P4M CMOS-MEMS process in TSMC (Taiwan Semiconductor Manufacturing Company). The measurement and simulation results show that the response of these devices with SWS is higher than for those without SWS. The trend of the measurement results is consistent with that of the simulation results. Obviously, the absorption efficiency of the CMOS compatible thermopile can be enhanced when the subwavelength structure exists.


NANO ◽  
2010 ◽  
Vol 05 (05) ◽  
pp. 295-300 ◽  
Author(s):  
YONGAN TANG ◽  
BRANISLAV VLAHOVIC ◽  
DAVID J. BRADY

We investigate the light propagating through a sub-wavelength-hole array in a thin gold film. The extraordinary light transmission (ELT) of the metallic array is observed. This ELT is due to the localized plasmon polaritons, whose production are dependent on the polarization of the light, the periodicity of the array, the features of the hole, and the thickness of the gold film. These parameters of the metallic structures are investigated through the finite difference time domain method. It is possible to obtain a desired transmission spectrum from the sub-wavelength-hole array by designing these parameters.


Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3218 ◽  
Author(s):  
Chi-Feng Chen ◽  
Chih-Hsiung Shen ◽  
Yun-Ying Yeh

The enhanced infrared absorbance (IRA) of the complementary metal-oxide-semiconductor (CMOS) compatible thermopile with the subwavelength rectangular-hole arrays in active area is investigated. The finite-difference time-domain (FDTD) method considered and analyzed the matrix arrangement (MA) and staggered arrangement (SA) of subwavelength rectangular-hole arrays (SRHA). For the better cases of MA-SRHA and SA-SRHA, the geometric parameters are the same and the infrared absorption efficiency (IAE) of the SA type is better than that of the MA type by about 19.4% at target temperature of 60 °C. Three proposed thermopiles with SA-SRHA are manufactured based on the 0.35 μm 2P4M CMOS-MEMS process. The measurement results are similar to the simulation results. The IAE of the best simulation case of SA-SRHA is up to 3.3 times higher than that without structure at the target temperature of 60 °C. Obviously, the staggered rectangular-hole arrays with more appropriate geometric conditions obtained from FDTD simulation can excellently enhance the IRA of the CMOS compatible thermopile.


Author(s):  
Widianto Widianto ◽  
Lailis Syafaah ◽  
Nurhadi Nurhadi

In this paper, effects of process variations in a HCMOS (High-Speed Complementary Metal Oxide Semiconductor) IC (Integrated Circuit) are examined using a Monte Carlo SPICE (Simulation Program with Integrated Circuit Emphasis) simulation. The variations of the IC are L and VTO variations. An evaluation method is used to evaluate the effects of the variations by modeling it using a normal (Gaussian) distribution. The simulation results show that the IC may be detected as a defective IC caused by the variations based on large supply currents flow to it. 


2020 ◽  
Vol 10 (8) ◽  
pp. 2966 ◽  
Author(s):  
Yun-Ying Yeh ◽  
Chih-Hsiung Shen ◽  
Chi-Feng Chen

The infrared absorption efficiency (IAE) enhancement of the complementary-metal-oxide-semiconductorCMOS compatible thermopile with special subwavelength hole arrays in an active area was numerically investigated by the finite-difference time-domain method. It was found that the absorption efficiency of that thermopile was enhanced when the subwavelength rectangular-hole array added extra rectangular-columnar or ellipse-columnar structures in the hole array. The simulation results show that the IAEs of the better cases for the three types of rectangular columns and three ellipse columns were increased by 14.4% and 15.2%, respectively. Such special subwavelength hole arrays can be improved by the IAE of the CMOS compatible thermopile.


Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2454
Author(s):  
Yi-Kuang Yen ◽  
Chao-Yu Lai

Detecting the concentration of Pb2+ ions is important for monitoring the quality of water due to it can become a health threat as being in certain level. In this study, we report a nanomechanical Pb2+ sensor by employing the complementary metal-oxide-semiconductor microelectromechanical system (CMOS MEMS)-based piezoresistive microcantilevers coated with PEDOT:PSS sensing layers. Upon reaction with Pb2+, the PEDOT:PSS layer was oxidized which induced the surface stress change resulted in a subsequent bending of the microcantilever with the signal response of relative resistance change. This sensing platform has the advantages of being mass-produced, miniaturized, and portable. The sensor exhibited its sensitivity to Pb2+ concentrations in a linear range of 0.01–1000 ppm, and the limit of detection was 5 ppb. Moreover, the sensor showed the specificity to Pb2+, required a small sample volume and was easy to operate. Therefore, the proposed analytical method described here may be a sensitive, cost-effective and portable sensing tool for on-site water quality measurement and pollution detection.


2011 ◽  
Vol 418-420 ◽  
pp. 679-683
Author(s):  
Bei Jia He ◽  
Xin Yi Chen ◽  
Jian Bo Wang ◽  
Jun Lu ◽  
Jian Chang ◽  
...  

To expand the bandgap's width of the one-dimensional photonic crystal, a crystal named SiO2/Metal/MgF2 is formed by joining some metals into the crystal SiO2/MgF2. Furthermore the Finite Difference Time Domain (FDTD) method is used to explore the metals' influence on the crystal's transmission characteristics. The simulation results show that the metals joined could expand the width of the one-dimensional photonic crystal's bandgap effectively and the bandgap's width increases when the metals' thickness increases. Meanwhile the bandgap's characteristic is affected by the metals' material-characteristic. The higher the plasma frequency is, the wider the bandgap's width will be and the more the number of the bandgaps will be. On the other hand, the metals' damping frequency has no significant effect on the bandgap, but would make the bandgap-edge's transmittance decrease slightly.


Nanophotonics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1747-1756 ◽  
Author(s):  
Jun Gou ◽  
Hilal Cansizoglu ◽  
Cesar Bartolo-Perez ◽  
Soroush Ghandiparsi ◽  
Ahmed S. Mayet ◽  
...  

AbstractIn this paper, we present a rigorous coupled-wave analysis (RCWA) of absorption enhancement in all-silicon (Si) photodiodes with integrated hole arrays of different shapes and dimensions. The RCWA method is used to analyze the light propagation and trapping in the photodiodes on both Si-on-insulator (SOI) and bulk Si substrates for the datacom wavelength at about 850 nm. Our calculation and measurement results show that funnel-shaped holes with tapered sidewalls lead to low back-reflection. A beam of light undergoes a deflection subsequent to the diffraction in the hole array and generates laterally propagating waves. SOI substrates with oxide layers play an important role in reducing the transmission loss, especially for deflected light with higher-order diffraction from the hole array. Owing to laterally propagating modes and back-reflection on the SiO2 film, light is more confined in the thin Si layer on the SOI substrates compared to that on the bulk Si substrates. Experimental results based on fabricated devices support the predictions of the RCWA. Devices are designed with a 2-μm-thick intrinsic layer, which ensures ultrafast impulse response (full-width at half-maximum) of 30 ps. Measurements for integrated photodiodes with funnel-shaped holes indicate an enhanced external quantum efficiency of more than 55% on the SOI substrates. This represents more than 500% improvement compared to photodiodes without integrated phototrapping nanoholes.


Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 92 ◽  
Author(s):  
Wei-Chun Shen ◽  
Po-Jen Shih ◽  
Yao-Chuan Tsai ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai

This study describes the fabrication of an ammonia gas sensor (AGS) using a complementary metal oxide semiconductor (CMOS)–microelectromechanical system (MEMS) technique. The structure of the AGS features interdigitated electrodes (IDEs) and a sensing material on a silicon substrate. The IDEs are the stacked aluminum layers that are made using the CMOS process. The sensing material; polypyrrole/reduced graphene oxide (PPy/RGO), is synthesized using the oxidation–reduction method; and the material is characterized using an electron spectroscope for chemical analysis (ESCA), a scanning electron microscope (SEM), and high-resolution X-ray diffraction (XRD). After the CMOS process; the AGS needs post-processing to etch an oxide layer and to deposit the sensing material. The resistance of the AGS changes when it is exposed to ammonia. A non-inverting amplifier circuit converts the resistance of the AGS into a voltage signal. The AGS operates at room temperature. Experiments show that the AGS response is 4.5% at a concentration of 1 ppm NH3; and it exhibits good repeatability. The lowest concentration that the AGS can detect is 0.1 ppm NH3


Sign in / Sign up

Export Citation Format

Share Document