scholarly journals Continuous Resonance Tuning without Blindness by Applying Nonlinear Properties of PIN Diodes

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2816
Author(s):  
Yong Luo ◽  
Hongtao Liu ◽  
Yiming He ◽  
Hengrong Cui ◽  
Guangli Yang
Keyword(s):  
Control Unit ◽  
Nonlinear Effects ◽  
Pin Diode ◽  
Pin Diodes ◽  
Active Devices ◽  
Nonlinear Properties ◽  
Electromagnetic Model ◽  
Continuous Tuning ◽  
Mathematical Expressions ◽  
Equivalent Impedance

Metamaterial antennas consisting of periodical units are suitable for achieving tunable properties by employing active elements to each unit. However, for compact metamaterials with a very limited number of periodical units, resonance blindness exists. In this paper, we introduce a method to achieve continuous tuning without resonance blindness by exploring hence, taking advantage of nonlinear properties of PIN diodes. First, we obtain the equivalent impedance of the PIN diode through measurements, then fit these nonlinear curves with mathematical expressions. Afterwards, we build the PIN diode model with these mathematical equations, making it compatible with implementing co-simulation between the passive electromagnetic model and the active element of PIN diodes and, particularly, the nonlinear effects can be considered. Next, we design a compact two-unit metamaterial antenna as an example to illustrate the electromagnetic co-simulation. Finally, we implement the experiments with a micro-control unit to validate this method. In addition, the nonlinear stability and the supplying voltage tolerance of nonlinear states for both two kinds of PIN diodes are investigated as well. This method of obtaining smooth tuning with nonlinear properties of PIN diodes can be applied to other active devices, if only PIN diodes are utilized.

scholarly journals C-Band and X-Band Switchable Frequency-Selective Surface

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 476
Author(s):  
Umer Farooq ◽  
Adnan Iftikhar ◽  
Muhammad Farhan Shafique ◽  
Muhammad Saeed Khan ◽  
Adnan Fida ◽  
...  
Keyword(s):  
Bottom Layer ◽  
Frequency Selective Surface ◽  
Transverse Magnetic ◽  
Unit Element ◽  
Angular Stability ◽  
Band Spectrum ◽  
Pin Diode ◽  
Pin Diodes ◽  
X Band ◽  
Frequency Selective

This paper presents a highly compact frequency-selective surface (FSS) that has the potential to switch between the X-band (8 GHz–12 GHz) and C-band (4 GHz–8 GHz) for RF shielding applications. The proposed FSS is composed of a square conducting loop with inward-extended arms loaded with curved extensions. The symmetric geometry allows the RF shield to perform equally for transverse electric (TE), transverse magnetic (TM), and 45° polarizations. The unit cell has a dimension of 0.176 λ0 and has excellent angular stability up to 60°. The resonance mechanism was investigated using equivalent circuit models of the shield. The design of the unit element allowed incorporation of PIN diodes between adjacent elements for switching to a lower C-band spectrum at 6.6 GHz. The biasing network is on the bottom layer of the substrate to avoid effects on the shielding performance. A PIN diode configuration for the switching operation was also proposed. In simulations, the PIN diode model was incorporated to observe the switchable operation. Two prototypes were fabricated, and the switchable operation was demonstrated by etching copper strips on one fabricated prototype between adjacent unit cells (in lieu of PIN diodes) as a proof of the design prototypes. Comparisons among the results confirmed that the design offers high angular stability and excellent performance in both bands.

Extended Defects in 4H-SiC PiN Diodes

2002 ◽  
Vol 742 ◽  
Author(s):  
M. E. Twigg ◽  
R. E. Stahlbush ◽  
M. Fatemi ◽  
S. D. Arthur ◽  
J. B. Fedison ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Compressive Strain ◽  
Pin Diode ◽  
Extended Defects ◽  
Pin Diodes ◽  
Plan View ◽  
Shockley Partial ◽  
Inhomogeneous Strain ◽  
Partial Dislocations ◽  
Transmission Electron

ABSTRACTUsing site-specific plan-view transmission electron microscopy (TEM) and lightemission imaging (LEI), we have identified SFs formed during forward biasing of 4H-SiC PiN diodes. These SFs are bounded by Shockley partial dislocations and are formed by shear strain rather than by condensation of vacancies or interstitials. Detailed analysis using TEM diffraction contrast experiments reveal SFs with leading carbon-core Shockley partial dislocations as well as with the silicon-core partial dislocations observed in plastic deformation of 4H-SiC at elevated temperatures. The leading Shockley partials are seen to relieve both tensile and compressive strain during PiN diode operation, suggesting the presence of a complex and inhomogeneous strain field in the 4H-SiC layer.

Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced Failure

2020 ◽  
Vol 1004 ◽  
pp. 1088-1096
Author(s):  
Yaren Huang ◽  
Benedikt Lechner ◽  
Gerhard Wachutka
Keyword(s):  
Impact Ionization ◽  
Mesh Size ◽  
Cosmic Ray ◽  
Heavy Ion ◽  
Transient Current ◽  
Pin Diode ◽  
Induced Current ◽  
Time Step ◽  
Pin Diodes ◽  
Center Track

This work aims at extending the predictive simulation technique for cosmic ray-induced failure analysis from Si PiN diodes [1] to SiC PiN diodes. Accurate 3D cylindrical-symmetric transient simulations were performed with a minimum mesh size of 20nm at the center track of the impinging ion and a maximum time step of 0.1ps during the development of the ion-induced transient current. We made a comparative study between a SiC PiN diode and a Si PiN diode with the same blocking voltage of 1.5kV, using the same heavy ion transportation models. In the simulation, we observed different ion-induced current transients, differing not only in the peak value of the current, but also in its duration. Due to different physical mechanisms, the dependence of the ion-induced current on the reverse pre-bias voltage and the numerical mesh adaptations are also different. Eventually, we brieflydiscuss electro-thermal simulations, which indicate once more that the ion-induced transient current in the SiC PiN diodes under consideration is primarily drift current and involves only negligible impact ionization.

scholarly journals Dual-Band Reconfigurable Antenna for Polarization Diversity

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Youngje Sung
Keyword(s):  
Ring Resonator ◽  
Dual Band ◽  
Reconfigurable Antenna ◽  
Pin Diode ◽  
Polarization Diversity ◽  
Pin Diodes ◽  
Resonant Frequencies ◽  
Polarized Waves ◽  
Ring Antenna ◽  
Left And Right

This paper proposes a dual-band reconfigurable square-ring antenna with a polarization diversity property. The proposed antenna consists of a square-ring resonator, two stubs with a shorting via, and two PIN diodes. The stub is positioned symmetrically to the left and right of the square-ring resonator, and the square-ring antenna connected to one of two stubs has a dual-band resonance. In this case, both resonant frequencies exhibit linear polarization (LP), and the two polarized waves are perpendicular to each other. The PIN diode selectively connects only one of the two stubs to the square-ring resonator. Thus, the polarization of the proposed antenna changes electrically at the two resonant frequencies. In addition, the frequency ratio (f2/f1) can be easily controlled by changing the length or width of the stub.

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

2006 ◽  
Vol 527-529 ◽  
pp. 1355-1358 ◽  
Author(s):  
Brett A. Hull ◽  
Mrinal K. Das ◽  
Jim Richmond ◽  
Bradley Heath ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
Pin Diode ◽  
High Current ◽  
Power Module ◽  
Temperature Dependent ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Blocking Voltage ◽  
Chip Size ◽  
Switching Characteristics ◽  
Vf Drift

Forward voltage (VF) drift, in which a 4H-SiC PiN diode suffers from an irreversible increase in VF under forward current flow, continues to inhibit commercialization of 4H-SiC PiN diodes. We present our latest efforts at fabricating high blocking voltage (6 kV), high current (up to 50 A) 4H-SiC PiN diodes with the best combination of reverse leakage current (IR), forward voltage at rated current (VF), and VF drift yields. We have achieved greater than 60% total die yield onwafer for 50 A diodes with a chip size greater than 0.7 cm2. A comparison of the temperature dependent conduction and switching characteristics between a 50 A/6 kV 4H-SiC PiN diode and a commercially available 60 A/4.5 kV Si PiN diode is also presented.

Reconfigurable circularly polarized capacitive coupled microstrip antenna

2016 ◽  
Vol 9 (4) ◽  
pp. 843-850 ◽  
Author(s):  
Dinesh Kumar Singh ◽  
Binod Kumar Kanaujia ◽  
Santanu Dwari ◽  
Ganga Prasad Pandey ◽  
Sandeep Kumar
Keyword(s):  
Circular Polarization ◽  
Microstrip Antenna ◽  
Axial Ratio ◽  
Dual Band ◽  
Single Frequency ◽  
Impedance Bandwidth ◽  
Pin Diode ◽  
Dual Frequency ◽  
Pin Diodes ◽  
Circularly Polarized

The design and measurement of reconfigurable circularly polarized capacitive fed microstrip antenna are presented. Small isosceles right angle triangular sections are removed from diagonally opposite corners for the generation of circular polarization (CP) of axial ratio bandwidth of 11.1%. Horizontal slits of different lengths are inserted at the edges of the truncated patch to provide the dual-band CP and by switching PIN diodes across the slits ON and OFF, reconfigurable circularly polarized antenna is realized. The antenna shows dual-band behavior with reconfigurable CP. In order to enhance the operation bandwidth of the antenna, an inclined slot was embedded on the patch along with PIN diodes across the horizontal slits. This proposed antenna gave an impedance bandwidth of 66.61% (ON state) ranging from 4.42 to 8.80 GHz and 68.42% (OFF state) ranging from 4.12 to 8.91 GHz and exhibits dual-frequency CP with PIN diode in OFF state and single-frequency CP with PIN diode in ON state with good axial ratio bandwidth. The axial ratio bandwidth of 4.42, 2.35, and 2.72% is obtained from the antenna. The antenna has a similar radiation pattern in all the three different CP bands and almost constant gain within the bands of CP operation.

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

2009 ◽  
Vol 615-617 ◽  
pp. 703-706 ◽  
Author(s):  
Nicolas Dheilly ◽  
Dominique Planson ◽  
Pierre Brosselard ◽  
Jawad ul Hassan ◽  
Pascal Bevilacqua ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Carrier Lifetime ◽  
Open Circuit ◽  
Pin Diode ◽  
Electrical Measurements ◽  
Pin Diodes ◽  
Influence Of Temperature ◽  
Voltage Decay ◽  
Influence Of Temperature On ◽  
New Generation

This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.

Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices

2008 ◽  
Vol 600-603 ◽  
pp. 1111-1114 ◽  
Author(s):  
Orest J. Glembocki ◽  
Joshua D. Caldwell ◽  
Jeffrey A. Mittereder ◽  
Jeffrey P. Calame ◽  
Steven C. Binari ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Thermal Imaging ◽  
Single Point ◽  
Pin Diode ◽  
Large Area ◽  
Pin Diodes ◽  
Average Temperature ◽  
Rf Devices ◽  
Operating Temperatures

Confocal μ-Raman was used to measure the operating temperatures in SiC MESFETS, AlGaN/GaN/SiC HEMT’s and 4H-SiC PiN diodes. Temperatures obtained from thermal imaging of the MESFETS compared well with those measured from Raman scattering. Operating temperatures were also obtained for large area PiN diode and it was shown that a single point at the center of the device can be used to measure the average temperature.

Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide

2006 ◽  
Vol 911 ◽  
Author(s):  
Zhaoxu Tian ◽  
Nathaniel R Quick ◽  
Aravinda Kar
Keyword(s):  
Silicon Carbide ◽  
Energy Dispersive Spectrometry ◽  
Solid Phase ◽  
Pin Diode ◽  
Carbon Incorporation ◽  
Pin Diodes ◽  
X Ray ◽  
Transmission Electron ◽  
Diffusion Technique ◽  
Doping Technique

AbstractA laser solid phase diffusion technique has been utilized to fabricate endolayers in n-type 6H-SiC substrates by carbon incorporation. X-ray energy dispersive spectrometry (XEDS) analysis showed that the thickness of endolayer is about 100 nm. High resolution transmission electron microscopy (HREM) images indicate that the laser endotaxy process maintains the crystalline integrity of the substrate without any amorphization. The resistivity of the endolayer was 1.1 ¡Á105 •cm and 9.4 ¡Á104 •cm after annealing at 1000C for 10 min. These resistivities provide device isolation for many applications. The silicon carbide endolayer was doped with aluminum using a laser doping technique to create p-region on the top surface of the endolayer in order to fabricate PIN diodes.

scholarly journals Design and Analysis of Reconfigurable Antenna for Wide Band Applications

2022 ◽  
Vol 2161 (1) ◽  
pp. 012073
Author(s):  
Sathuluri MallikharjunaRao ◽  
Thirumala SettyVennelaSrujana ◽  
Gurivinadagunta Bhuvana Bindu ◽  
Garlapatikotinagapavani
Keyword(s):  
Patch Antenna ◽  
Dynamic Environment ◽  
Wide Band ◽  
Reconfigurable Antenna ◽  
Pin Diode ◽  
Strip Line ◽  
Pin Diodes ◽  
Resonant Frequencies ◽  
Multiple Frequencies

Abstract The relevance of reconfiguration in a dynamic environment is to improve an antenna’s performance by allowing it to transition between multiple frequencies. In this paper, we designed a reconfigurable patch antenna and fed it by strip line feeding by placing 2 slots to obtain different resonant frequencies. The feature of reconfigurability is attained by using Pin Diodes. In our design, we take a 2 pin diode. The proposed Antenna can operate on different frequencies i.e. 2.88GHz, 5.5GHz, 10.8GHz and 11.1GHz with the efficiency of 90% and more at different conditions of the diodes. This analysis is done by using HFSS Software.

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