scholarly journals Chemically Induced pH Perturbations for Analyzing Biological Barriers Using Ion-Sensitive Field-Effect Transistors

Sensors ◽  
2021 ◽  
Vol 21 (21) ◽  
pp. 7277
Author(s):  
Tatsuro Goda
Keyword(s):  
Field Effect ◽  
Time Course ◽  
Plasma Membranes ◽  
Field Effect Transistors ◽  
Biological Activities ◽  
Weak Acid ◽  
Gate Insulator ◽  
Ph Sensing ◽  
Glass Ph Electrode

Potentiometric pH measurements have long been used for the bioanalysis of biofluids, tissues, and cells. A glass pH electrode and ion-sensitive field-effect transistor (ISFET) can measure the time course of pH changes in a microenvironment as a result of physiological and biological activities. However, the signal interpretation of passive pH sensing is difficult because many biological activities influence the spatiotemporal distribution of pH in the microenvironment. Moreover, time course measurement suffers from stability because of gradual drifts in signaling. To address these issues, an active method of pH sensing was developed for the analysis of the cell barrier in vitro. The microenvironmental pH is temporarily perturbed by introducing a low concentration of weak acid (NH4+) or base (CH3COO−) to cells cultured on the gate insulator of ISFET using a superfusion system. Considering the pH perturbation originates from the semi-permeability of lipid bilayer plasma membranes, induced proton dynamics are used for analyzing the biomembrane barriers against ions and hydrated species following interaction with exogenous reagents. The unique feature of the method is the sensitivity to the formation of transmembrane pores as small as a proton (H+), enabling the analysis of cell–nanomaterial interactions at the molecular level. The new modality of cell analysis using ISFET is expected to be applied to nanomedicine, drug screening, and tissue engineering.

scholarly journals Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors

Nano Letters ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 4431-4439 ◽  
Author(s):  
J. G. Gluschke ◽  
J. Seidl ◽  
R. W. Lyttleton ◽  
D. J. Carrad ◽  
J. W. Cochrane ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator

Graphene field effect transistors for in vitro and ex vivo recordings

2016 ◽  
pp. 1-1 ◽  
Author(s):  
Dmitry Kireev ◽  
Ihor Zadorozhnyi ◽  
Tianyu Qiu ◽  
Dario Sarik ◽  
Fabian Brings ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ex Vivo

Ionic Impurities in Poly(vinyl alcohol) Gate Dielectrics and Hysteresis Effects in Organic Field Effect Transistors

2008 ◽  
Vol 1091 ◽  
Author(s):  
Martin Egginger ◽  
Mihai Irimia-Vladu ◽  
Reinhard Schwödiauer ◽  
Andreas Tanda ◽  
Siegfried Bauer ◽  
...  
Keyword(s):  
Vinyl Alcohol ◽  
Field Effect ◽  
Water Solubility ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Poly Vinyl Alcohol ◽  
Organic Field Effect Transistors ◽  
Electronic Circuits ◽  
Metal Insulator Metal ◽  
Ionic Impurities

AbstractPoly(vinyl alcohol) (PVA) is a water based dielectric often used as a coating layer in paper industry. Due to its water solubility PVA is also interesting as gate insulator in organic field effect transistors. Depending on the preparation of the PVA gate, transistors with and without hysteresis can be produced, with applications in organic electronic circuits or memory elements. In the production of PVA, a major side product is sodium acetate, an ionic salt not completely removed during industrial purification. Such ionic impurities likely influence the hysteresis in PVA based organic field effect transistors. While a hysteresis is desirable in memory elements it is unwanted in transistors for electronic circuits. Ways to prepare transistors with a desired transfer characteristic are described, for example by using electronic grade products directly from the purchaser of PVA, or by employing PVA purified by means of dialysis. Measurements are performed with metal-insulator-metal (MIM) structures and organic field effect transistors (OFETs), where Buckminsterfullerene C60 is employed as organic semiconductor.

Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate

2007 ◽  
Vol 544-545 ◽  
pp. 753-756
Author(s):  
In Jae Back ◽  
Su Cheol Gong ◽  
Hun Seoung Lim ◽  
Ik Sub Shin ◽  
Seoung Woo Kuk ◽  
...  
Keyword(s):  
Active Layer ◽  
Glass Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Semiconductor Films ◽  
Insulation Property ◽  
Ito Glass ◽  
Lower Mobility

The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

Low-Leakage Fiber-Based Field-Effect Transistors with an Al2O3–MgO Nanolaminate as Gate Insulator

2019 ◽  
Vol 1 (8) ◽  
pp. 1400-1407 ◽  
Author(s):  
Jeong Woo Park ◽  
Seonil Kwon ◽  
Jeong Hyun Kwon ◽  
Chan Young Kim ◽  
Kyung Cheol Choi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Low Leakage
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