scholarly journals Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

2021 ◽  
Author(s):  
Cleophace Seneza ◽  
Christoph Berger ◽  
Prabha Sana ◽  
Hartmut Witte ◽  
Jürgen Bläsing ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
X Ray Diffraction ◽  
Maximum Reflectivity ◽  
Vertical Cavity Surface ◽  
Interface Roughening ◽  
Vertical Cavity ◽  
Ge Doping ◽  
Very High

Abstract We report on the realization of highly conductive and highly reflective n-type AlInN/GaN distributed Bragg reflectors (DBR) for use in vertical cavity surface emitters in a metalorganic vapor phase epitaxy process. While Ge-doping enables low-resistive n-type GaN/AlInN/GaN heterostructures, very high Ge doping levels compromise maximum optical reflectivities of DBRs. Simulations of the Bragg mirror's reflectivities together with structural analysis by X-ray diffraction reveal an increased absorption within the doped AlInN layers and interface roughening as major causes for the observed reduction of the optical reflectivity. By adjusting the Ge doping level in the AlInN layers, this structural degradation was minimized and highly conductive, 45-fold AlInN/GaN DBR structures with a maximum reflectivity of 99 % and vertical specific resistance of 5x10-4 Ωcm2 were realized.

scholarly journals GaN-based Vertical-Cavity Surface-Emitting Lasers Incorporating Dielectric Distributed Bragg Reflectors

2019 ◽  
Vol 9 (4) ◽  
pp. 733 ◽  
Author(s):  
Tatsushi Hamaguchi ◽  
Hiroshi Nakajima ◽  
Noriyuki Fuutagawa
Keyword(s):  
Continuous Wave ◽  
Epitaxial Lateral Overgrowth ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Practical Applications ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

This paper reviews past research and the current state-of-the-art concerning gallium nitride-based vertical-cavity surface-emitting lasers (GaN-VCSELs) incorporating distributed Bragg reflectors (DBRs). This paper reviews structures developed during the early stages of research into these devices, covering both major categories of GaN-based VCSELs: hybrid-DBR and all-dielectric-DBR. Although both types exhibited satisfactory performance during continuous-wave (CW) operation in conjunction with current injection as early as 2008, GaN-VCSELs have not yet been mass produced for several reasons. These include the difficulty in controlling the thicknesses of nitride semiconductor layers in hybrid-DBR type devices and issues related to the cavity dimensions in all-dielectric-DBR units. Two novel all-dielectric GaN-based VCSEL concepts based on different structures are examined herein. In one, the device incorporates dielectric DBRs at both ends of the cavity, with one DBR embedded in n-type GaN grown using the epitaxial lateral overgrowth technique. The other concept incorporates a curved mirror fabricated on (000-1) GaN. Both designs are intended to mitigate challenges regarding industrial-scale processing that are related to the difficulty in controlling the cavity length, which have thus far prevented practical applications of all-dielectric GaN-based VCSELs.

Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

2003 ◽  
Vol 83 (5) ◽  
pp. 830-832 ◽  
Author(s):  
Takehiko Tawara ◽  
Hideki Gotoh ◽  
Tetsuya Akasaka ◽  
Naoki Kobayashi ◽  
Tadashi Saitoh
Keyword(s):  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Emitting Lasers ◽  
Vertical Cavity
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