Deep level transient spectroscopy and photoluminescence studies of hole and electron traps in ZnSnP2 bulk crystals

Abstract ZnSnP2, an emerging inorganic material for solar cells, was characterized by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Acceptor- and donor-like traps with shallow energy levels were detected by DLTS analysis. The previous study based on first-principle calculation also suggested such traps were due to antisite defects of Zn and Sn. PL measurements also revealed sub-gap transitions related to these trap levels. Additionally, DLTS found a trap with deep level in ZnSnP2. A short lifetime of minority carrier in previous work might be due to such trap, coming from phosphorus vacancies and/or zinc interstitials suggested by first-principle study.

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Deep‐level transient spectroscopy and photoluminescence studies of electron‐irradiated Czochralski silicon

Journal of Applied Physics ◽

10.1063/1.337198 ◽

1986 ◽

Vol 60 (6) ◽

pp. 1974-1979 ◽

Cited By ~ 42

Author(s):

O. O. Awadelkarim ◽

H. Weman ◽

B. G. Svensson ◽

J. L. Lindström

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Czochralski Silicon ◽

Transient Spectroscopy ◽

Photoluminescence Studies

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THERMAL CURRENTS FROM UNDOPED SEMI-INSULATING GaAs MONITORED BY CHARGE DEEP-LEVEL TRANSIENT SPECTROSCOPY

International Journal of Modern Physics B ◽

10.1142/s021797929500118x ◽

1995 ◽

Vol 09 (23) ◽

pp. 3099-3114

Author(s):

I. THURZO ◽

K. GMUCOVÁ ◽

F. DUBECKÝ ◽

J. DARMO

Keyword(s):

Space Charge ◽

Space Charge Region ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Energy Levels ◽

Thermally Stimulated Currents ◽

Metal Semiconductor Metal ◽

Transient Spectroscopy ◽

Electrical Bias

Metal-semiconductor-metal (MSM) devices prepared from crystalline undoped semi-insulating GaAs were investigated by charge deep-level transient spectroscopy (QDLTS), while exciting the devices by electrical bias pulses in dark. Unlike current concepts of the QDLTS response, thermally stimulated currents were integrated from devices with GaAs crystals thinned down to or below 200 µm and equipped with Au electrodes. Au-GaAs-Au structures on 230 µm thick crystals exhibited standard QDLTS response on either cooling or heating between 100 K and 250 K. It is concluded that a macroscopic space charge region of width ≈10−7 m is formed at the Au/GaAs interface, as the dominant energy levels became ionized. Obtained results on the peaks of the thermally stimulated charge were correlated with those of potentially identical peaks observed via optical admittance transient spectroscopy (OATS).

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EL2 and gallium antisite defects in GaAs: Si

Canadian Journal of Physics ◽

10.1139/p89-066 ◽

1989 ◽

Vol 67 (4) ◽

pp. 375-378 ◽

Cited By ~ 4

Author(s):

C. K. Teh ◽

F. L. Weichman ◽

C. C. Tin ◽

P. A. Barnes

Keyword(s):

Fourier Transform ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Fourier Transform Infrared ◽

Antisite Defect ◽

Longitudinal Optic ◽

Related Defect ◽

Antisite Defects ◽

Transient Spectroscopy ◽

Silicon Doped

Photoluminescence (PL), Fourier-transform infrared (FTIR), and deep-level transient spectroscopy (DLTS) measurements have been made on various samples of silicon-doped liquid-encapsulated Czochralski-grown GaAs. All the samples show prominent PL peaks at 1.443 and 1.325 eV together with their longitudinal optic (LO) phonon peaks. The PL peak at 1.443 eV has been reported in the literature as being due to either GaAs or a boron-related defect. The FTIR results show the presence of BGa at 540.3 and 517.0 cm−1 and SiGa at 383.6 cm−1. We have observed that there is no correlation between the PL peak at 1.443 eV and BGa. Thus, we believe that this PL peak is related to the GaAs antisite defect. The presence of EL2 in the samples has been measured using DLTS. We have found that the intensity of the PL peak at 1.443 eV varies inversely with that of the EL2 peak. This relationship indirectly confirms that the 1.443 eV peak is due to the gallium antisite defect. The PL peak at 1.325 eV is significantly different from those reported in the literature for GaAs:Si. Measurements have also been made on samples of GaAs:Si annealed under different arsenic overpressures.

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Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.242.163 ◽

2015 ◽

Vol 242 ◽

pp. 163-168 ◽

Cited By ~ 2

Author(s):

Ilia L. Kolevatov ◽

Frank Herklotz ◽

Viktor Bobal ◽

Bengt Gunnar Svensson ◽

Edouard V. Monakhov

Keyword(s):

Schottky Diode ◽

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Energy Levels ◽

Depletion Region ◽

Type Silicon ◽

Oxygen Center ◽

Hydrogen Vacancy ◽

Transient Spectroscopy

The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.

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Determination of energy levels of surface states in GaAs metal–semiconductor field-effect transistor using deep-level transient spectroscopy

Applied Physics Letters ◽

10.1063/1.123458 ◽

1999 ◽

Vol 74 (8) ◽

pp. 1108-1110 ◽

Cited By ~ 19

Author(s):

Kyoung Jin Choi ◽

Jong-Lam Lee

Keyword(s):

Deep Level Transient Spectroscopy ◽

Field Effect ◽

Field Effect Transistor ◽

Deep Level ◽

Energy Levels ◽

Surface States ◽

Effect Transistor ◽

Transient Spectroscopy

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Investigation of Defect Concentration Distributions in Ion-Implanted and Annealed GaAs

MRS Proceedings ◽

10.1557/proc-2-487 ◽

1980 ◽

Vol 2 ◽

Cited By ~ 1

Author(s):

K.L. Wang ◽

G.P. Li ◽

P.M. Asbeck ◽

C.G. Kirkpatrick

Keyword(s):

Ion Implantation ◽

Space Charge Region ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Energy Levels ◽

Reliable Data ◽

Electron Trap ◽

Bridgman Technique ◽

Transient Spectroscopy ◽

Anneal Temperature

ABSTRACTUncapped and Si3N4-capped annealing of GaAs grown with the horizontal Bridgman technique was investigated with deep-level transient spectroscopy. Electron trap concentration distributions were measured with a reduced noise DLTS system to ensure reliable data. Ion implantation using Se ions both prior to capping and through a Si3N4 cap was carried out. The evolution of defect energy levels and the changes in concentration distributions with anneal temperature were studied. It is concluded that the defects residing in the probed space-charge region can be annealed out with a Si3N4 cap at a temperature higher than 750 C.

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DLTS study of 3C-SiC grown on Si using hexamethyldisilane

MRS Proceedings ◽

10.1557/proc-622-t4.3.1 ◽

2000 ◽

Vol 622 ◽

Author(s):

M. Kato ◽

M. Ichimura ◽

E. Arai ◽

Y. Masuda ◽

Y. Chen ◽

...

Keyword(s):

Activation Energy ◽

Deep Level Transient Spectroscopy ◽

Defect Density ◽

Deep Level ◽

Energy Levels ◽

Wide Energy Range ◽

Defect Level ◽

Wide Energy ◽

Transient Spectroscopy ◽

Relationship Of

ABSTRACTn-type 3C-SiC was heteroepitaxially grown on n-type Si(100) substrates using HMDS (hexamethyldisilane) and characterized by DLTS (deep level transient spectroscopy) measurements. In order to investigate relationship of defect density with epilayer thickness, epilayers with various thicknesses were grown. Relatively thin (<1.0μm thick) epilayers were found to contain defects with energy levels distributed in a wide energy range, while relatively thick (>2.2μm thick) epilayers contain a defect with an activation energy of 0.25eV. This defect level is slightly shallower than that in 3C-SiC grown by SiH4 and C3H8 (∼0.3eV).

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