Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing

2022 ◽  
Author(s):  
Kesuke YAMANE ◽  
Ryo Futamura ◽  
Shigeto Genjo ◽  
Daiki Hamamoto ◽  
Yuito Maki ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Irradiation ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Structural Defects ◽  
Irradiation Damage ◽  
Dilute Nitride ◽  
Positive Effects ◽  
Nitride Alloys

Abstract This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-based dilute nitride alloys. It is found that proton/electron irradiation followed by rapid thermal annealing enhances the PL peak intensity of GaPN alloys, whereas major photovoltaic III-V materials such as GaAs and InGaP degrade their crystal quality by irradiation damage. Atomic force microscopy and transmission electron microscopy reveal no degradation of structural defects. GaAsPN solar cell test devices are then fabricated. Results show that the conversion efficiency increases by proton/electron irradiation, which is mainly caused by an increase in the short-circuit current.

Role of alpha 1- and alpha 2-adrenergic receptors in Cl- transport across frog corneal epithelium

1988 ◽  
Vol 255 (6) ◽  
pp. C724-C730 ◽  
Author(s):  
T. C. Chu ◽  
O. A. Candia
Keyword(s):  
Adenylate Cyclase ◽  
Corneal Epithelium ◽  
Apical Membrane ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Negative Influence ◽  
Adenylate Cyclase System ◽  
Positive Effects ◽  
Cl Transport ◽  
Beta Agonists

Norepinephrine, 10(-6) M, reduced Cl- transport by 26% in 75% of isolated frog corneal epithelia. This inhibition was not previously reported. Since beta-adrenergic agonists are known to only stimulate Cl- transport, the action of specific alpha 1- and alpha 2-agonists on Cl- transport and electrical parameters was investigated. Phenylephrine, an alpha 1-agonist always stimulated the Cl(-)-dependent short-circuit current (Isc), but less than the beta-agonists. UK-14,304-18 (UK), a selective alpha 2-agonist, reduced both the Isc (by 31% at 10(-5) M) and the stroma-to-tear unidirectional Cl- flux. UK hyperpolarized the apical membrane potential difference and increased the transepithelial resistance and apical-to-basolateral resistance ratio. UK reduced forskolin-stimulated adenylate cyclase activity by 36%. The electrophysiological effects of UK are consistent with a reduction of the Cl- permeability at the apical membrane. Pretreatment with UK sensitized the tissue for a greater effect by forskolin. Results show that the frog corneal epithelium also possesses alpha 1- and alpha 2-receptors, the latter negatively coupled to the adenylate cyclase system. Cl- transport is thus regulated by an interaction between the positive effects of beta- and alpha 1-stimulation and the negative influence of alpha 2-stimulation.

Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

2020 ◽  
Vol 117 (14) ◽  
pp. 142106
Author(s):  
E.-M. Pavelescu ◽  
O. Ligor ◽  
J. Occena ◽  
C. Ticoş ◽  
A. Matei ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Irradiation

scholarly journals Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys

2020 ◽  
Vol 814 ◽  
pp. 152233
Author(s):  
M.A.G. Balanta ◽  
P.B.A. de Oliveira ◽  
H. Albalawi ◽  
Y. Galvão Gobato ◽  
H.V.A. Galeti ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Dilute Nitride ◽  
Nitrogen Incorporation ◽  
Spin Properties ◽  
Nitride Alloys

Influence of Rapid Thermal Annealing on Shallow BF2 Implantation into Pre-Amorphized Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
W. Maszara ◽  
C. Carter ◽  
D. K. Sadana ◽  
J. Liu ◽  
V. Ozguz ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Structural Defects ◽  
Structural Quality ◽  
Halogen Lamp ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTLow energy, shallow BF2+ implants were carried out at room or liquid nitrogen temperature into deep pre-amorphized (100) Si for better control of the dopant profile and post-annealing structural defects. Cross sectional and angle polished plan view transmission electron microscopy were used to study the structural quality of the implanted layer, while SIMS provided a chemical profile. Four types of structural defects were observed in BF2+ implanted, pre-amorphized samples following rapid thermal annealing with a halogen lamp. An in-situ ion beam annealing and the presence of F in the Si lattice were related to the creation of the defects. Good correlations between F gettering and TEM observed defects were found to exist. Implantation of B+ into a pre-amorphized Si surface and subsequent rapid thermal annealing was found to produce a wide defect-free surface layer.

scholarly journals Reflectance Improvement by Thermal Annealing of Sputtered Ag/ZnO Back Reflectors in a-Si:H Thin Film Silicon Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Karin Söderström ◽  
Franz-Josef Haug ◽  
Céline Pahud ◽  
Rémi Biron ◽  
Jordi Escarré ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Short Circuit ◽  
Flexible Substrate ◽  
Short Circuit Current ◽  
Silicon Solar Cells ◽  
Polyethylene Naphthalate ◽  
Thin Film Silicon ◽  
Back Reflectors

ABSTRACTSilver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back reflector increases its reflectance drastically. The process is performed at low temperature (150°C) to allow the use of plastic sheets such as polyethylene naphthalate and increases the efficiency of single junction amorphous solar cells dramatically. We present the best result obtained on a flexible substrate: a cell with 9.9% initial efficiency and 15.82 mA/cm2 in short circuit current is realized in n-i-p configuration.

Effect of cobalt 60 and 1 MeV electron irradiation on silicon photodiodes/solar cells

2002 ◽  
Vol 80 (12) ◽  
pp. 1591-1599 ◽  
Author(s):  
A M Saad
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
Dark Current ◽  
High Stability ◽  
Room Temperature ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Manufacturing Processes

Using 10–60 krad doses of cobalt 60 gamma radiation, the effect of simulated space radiation on 1 mm2 active area silicon photodiodes with a sapphire window is studied. The diodes will be used to control the laser output of a space experiment in geostationary orbit. The effect of 1 MeV electron irradiation with various fluences on 100 mm2 silicon photodiodes/solar cells, which were used to control the attitude of a satellite in space, is also studied here. Fluences ranging from 3 x 1014 to 1 x 1015 cm–2 of 1 MeV energy, caused a decrease in the short-circuit current, i.e., increasing the percentage of deterioration from 12% to 20% at a room-temperature measurement. Exposure to the gamma irradiation yields almost no degradation for the electro-optical performance of the devices. The manufacturing processes of the detectors and their electro-optical I–V characteristics such as fill factor, responsivity, and dark current are presented here. Electro-optical tests were also done at intermediate levels of irradiation. High stability and high quality of the photodiodes were achieved prior to and after irradiation. PACS No.: 84.60J

Stability of structural defects of polycrystalline silicon grown by rapid thermal annealing of amorphous silicon films

1995 ◽  
Vol 268 (1-2) ◽  
pp. 1-4 ◽  
Author(s):  
D. Girginoudi ◽  
S. Girginoudi ◽  
A. Thanailakis ◽  
N. Georgoulas ◽  
J. Stoemenos ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Structural Defects

scholarly journals Effect of solar cell structure on the radiation resistance of an InP solar cell

2020 ◽  
Vol 191 ◽  
pp. 01005
Author(s):  
Halima Mazouz ◽  
Abderrahmane Belghachi ◽  
Pierre-Olivier Logerais
Keyword(s):  
Solar Cell ◽  
Electron Irradiation ◽  
Open Circuit Voltage ◽  
Deep Level ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Solar Cell Structure ◽  
Simulation Results

Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n Indium Phosphide (InP) solar cells with very thin emitters. The simulation results reveal that the n/p structure offers a somewhat better short-circuit current and that the p/n structure renders an improved open-circuit voltage, not only before electron irradiation but also after 1 MeV electron irradiation with 5×1015 electrons per cm2 fluence. Further, the calculated findings highlight that the n/p solar cell structure is more resistant than that of a p/n structure.

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