Organic monolayers modified by vacuum ultraviolet irradiation for solution-processed organic thin-film transistors

Author(s):  
Satoshi Inoue ◽  
Yoshiaki HATTORI ◽  
Masatoshi KITAMURA

Abstract A trimethylsilyl-monolayer modified by vacuum ultraviolet (VUV) light has been investigated for use in solution-processed organic thin-film transistors (OTFTs). The VUV irradiation changed a hydrophobic trimethylsilyl-monolayer formed from hexamethyldisilazane vapor into a hydrophilic surface suitable for solution processing. The treated surface was examined via water contact angle measurement and X-ray photoelectron spectroscopy. An appropriate irradiation of VUV light enabled the formation of a dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) film on a modified monolayer by spin-coating. Consequently, the C8-BTBT-based OTFT with a monolayer modified for an optimal VUV irradiation time exhibited a field-effect mobility up to 4.76 cm2 V−1 s−1. The partial monolayer modification with VUV can be adapted to a variety of solution-processes and organic semiconductors for prospective printed electronics.

2010 ◽  
Vol 3 (10) ◽  
pp. 101601 ◽  
Author(s):  
Yoshinori Horii ◽  
Koichi Sakaguchi ◽  
Masayuki Chikamatsu ◽  
Reiko Azumi ◽  
Kiyoshi Yase ◽  
...  

2015 ◽  
Vol 106 (18) ◽  
pp. 183301 ◽  
Author(s):  
Zhengran He ◽  
Shoieb Shaik ◽  
Sheng Bi ◽  
Jihua Chen ◽  
Dawen Li

2019 ◽  
Vol 16 (9) ◽  
pp. 225-230 ◽  
Author(s):  
Jinwoo Kim ◽  
Jaewook Jeong ◽  
Sung J. Park ◽  
Soon-Ki Kwon ◽  
Jang-Joo Kim ◽  
...  

2007 ◽  
Author(s):  
He Yan ◽  
Shaofeng Lu ◽  
Yan Zheng ◽  
Philippe Inagaki ◽  
Antonio Facchetti ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 14890-14895 ◽  
Author(s):  
Xurong Zhao ◽  
Sumei Wang ◽  
Aiju Li ◽  
Jun Ouyang ◽  
Guodong Xia ◽  
...  

Solution-processed high-k ZrTiOx dielectric films achieve a k value and capacitance of 53 and 467 nF cm−2, and a low leakage current of 4 × 10−8 A cm−2 with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm2 V−1 s−1, and a low operating voltage of 6 V were realized with ZrTiOx dielectric films.


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