scholarly journals Analysis and Optimization of DC Supply Range for the ESP32 Development Board

2020 ◽  
Author(s):  
Joshua Kim
Keyword(s):  
Supply Voltage ◽  
Thermal Conditions ◽  
Junction Temperature ◽  
Potential Game ◽  
Voltage Range ◽  
Essential Components ◽  
External Sources ◽  
External Power ◽  
Heated Element ◽  
Game Changer

<div><p>ESP32 is becoming a popular and potential game-changer in the IoT industry. Once a code completed, to take off without a USB power, questions rise about powering it; What’s the feasible external voltage range? What’s the current? Which cell battery? And so on. These questions cannot be quickly resolved by only skimming datasheets.</p><p><br></p><p>This paper went over to clarify the obscure information about the DC supply range for the ESP32 development board, especially ESP32-DevKitC V4. The investigation, calculation, experiments, and LTspice simulation disclosed the result. Starting from getting relevance facts from datasheets of essential components on the board, calculated thermal conditions of the heated element, experimented to confirm the deliberate and get empirical data while code running including GPIO and WiFi, and ended with simulation ensure the data.</p><p><br></p><p>This paper concludes the following result points. The minimum supply voltage is 3.6 V to run an ESP32 module. The supply voltage should be under 10 V for both input capacitor rated voltage and LDO junction temperature rating. The thermal restriction was calculated at an ambient temperature of 25 °C and tried and tested. For a more harsh environment, this way could derate the upper limit voltage. An external power should supply current well over average 100 mA, a good 1 A. In terms of battery, this range reassures that an ESP32 can run with a single cell LiPo. Regarding the USB, both the high power and low power port can supply sufficiently. While an external supply being no less than 5.2 V, both the USB and external sources could work simultaneously.</p></div><div><br></div>

scholarly journals Analysis and Optimization of DC Supply Range for the ESP32 Development Board

2020 ◽  
Author(s):  
Joshua Kim
Keyword(s):  
Supply Voltage ◽  
Thermal Conditions ◽  
Junction Temperature ◽  
Potential Game ◽  
Voltage Range ◽  
Essential Components ◽  
External Sources ◽  
External Power ◽  
Heated Element ◽  
Game Changer

<div><p>ESP32 is becoming a popular and potential game-changer in the IoT industry. Once a code completed, to take off without a USB power, questions rise about powering it; What’s the feasible external voltage range? What’s the current? Which cell battery? And so on. These questions cannot be quickly resolved by only skimming datasheets.</p><p><br></p><p>This paper went over to clarify the obscure information about the DC supply range for the ESP32 development board, especially ESP32-DevKitC V4. The investigation, calculation, experiments, and LTspice simulation disclosed the result. Starting from getting relevance facts from datasheets of essential components on the board, calculated thermal conditions of the heated element, experimented to confirm the deliberate and get empirical data while code running including GPIO and WiFi, and ended with simulation ensure the data.</p><p><br></p><p>This paper concludes the following result points. The minimum supply voltage is 3.6 V to run an ESP32 module. The supply voltage should be under 10 V for both input capacitor rated voltage and LDO junction temperature rating. The thermal restriction was calculated at an ambient temperature of 25 °C and tried and tested. For a more harsh environment, this way could derate the upper limit voltage. An external power should supply current well over average 100 mA, a good 1 A. In terms of battery, this range reassures that an ESP32 can run with a single cell LiPo. Regarding the USB, both the high power and low power port can supply sufficiently. While an external supply being no less than 5.2 V, both the USB and external sources could work simultaneously.</p></div><div><br></div>

scholarly journals Analysis and optimization of DC supply range for the ESP32 development board

2020 ◽  
Author(s):  
Joshua Kim
Keyword(s):  
Supply Voltage ◽  
Thermal Conditions ◽  
Junction Temperature ◽  
Harsh Environment ◽  
Potential Game ◽  
Voltage Range ◽  
Essential Components ◽  
External Sources ◽  
External Power ◽  
Game Changer

<div>ESP32 is becoming a popular and potential game-changer in the IoT industry. Once a code completed, to take off out of a USB power, questions rise about powering it. What’s the feasible external voltage range? What’s the current? Which cell battery? And so on. These questions cannot be easily resolved by only skimming datasheets.</div><div><br></div><div>This paper went over to clarify the obscure information about the DC supply range for the ESP32 development board, especially ESP32-DevKitC V4. The results were disclosed through investigation, calculation, experiments, and LTspice simulation. Starting from getting relevance facts from datasheets of essential components on the board, calculated thermal conditions of heated component, experimented to confirm the calculated and get practical data while code running including GPIO and WiFi, and ended with simulation to confirm the data.</div><div><br></div><div>This paper concludes the following result points. The minimum supply voltage is 3.6 V to run an ESP32 module. The supply voltage should be under 10 V for both input capacitor rated voltage and LDO junction temperature rating. The thermal restriction was calculated at an ambient temperature of 25 °C and tried and tested. For a more harsh environment, the upper limit voltage could be derated in this way. An external power should be able to supply current well over average 100 mA; a good 1 A. In terms of battery, this range reassures that an ESP32 can run with a single cell LiPo. Regarding the USB, both the high power and low power port can supply sufficiently. While an external supply being no less than 5.2 V, both the USB and external sources could work simultaneously.</div><div><br></div>

scholarly journals Analysis and optimization of DC supply range for the ESP32 development board

2020 ◽  
Author(s):  
Joshua Kim
Keyword(s):  
Supply Voltage ◽  
Thermal Conditions ◽  
Junction Temperature ◽  
Harsh Environment ◽  
Potential Game ◽  
Voltage Range ◽  
Essential Components ◽  
External Sources ◽  
External Power ◽  
Game Changer

<div>ESP32 is becoming a popular and potential game-changer in the IoT industry. Once a code completed, to takeoff</div><div>out of a USB power, questions rise about powering it. What’s the feasible external voltage range? What’s the</div><div>current? Which cell battery? And so on. These questions cannot be easily resolved by only skimming datasheets.</div><div><br></div><div>This paper went over to clarify the obscure information about the DC supply range for the ESP32 development</div><div>board, especially ESP32-DevKitC V4. The results were disclosed through investigation, calculation, experiments,</div><div>and LTspice simulation. Starting from getting relevance facts from datasheets of essential components on the board,</div><div>calculated thermal conditions of heated component, experimented to confirm the calculated and get practical data</div><div>while code running including GPIO and WiFi, and ended with simulation to confirm the data.</div><div><br></div><div>This paper concludes the following result points. The minimum supply voltage is 3.6 V to run an ESP32 module.</div><div>The supply voltage should be under 10 V for both input capacitor rated voltage and LDO junction temperature</div><div>rating. The thermal restriction was calculated at an ambient temperature of 25 °C and tried and tested. For a more</div><div>harsh environment, the upper limit voltage could be derated in this way. An external power should be able to</div><div>supply current well over average 100 mA; a good 1 A. In terms of battery, this range reassures that an ESP32 can</div><div>run with a single cell LiPo. Regarding the USB, both the high power and low power port can supply sufficiently.</div><div>While an external supply being no less than 5.2 V, both the USB and external sources could work simultaneously.</div><div><br></div>

A 3.2ppm/°C curvature-compensated bandgap reference with wide supply voltage range

2012 ◽  
Vol 43 (11) ◽  
pp. 863-868 ◽  
Author(s):  
Ze-Kun Zhou ◽  
Xue-Chun Ou ◽  
Yue Shi ◽  
Pei-Sheng Zhu ◽  
Ying-Qian Ma ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Bandgap Reference ◽  
Voltage Range

scholarly journals T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process

Sensors ◽  
2022 ◽  
Vol 22 (2) ◽  
pp. 507
Author(s):  
Behnam S. Rikan ◽  
David Kim ◽  
Kyung-Duk Choi ◽  
Arash Hejazi ◽  
Joon-Mo Yoo ◽  
...  
Keyword(s):  
Negative Charge ◽  
Switching Time ◽  
Supply Voltage ◽  
Charge Pump ◽  
Design Rule ◽  
Absolute Maximum ◽  
Optimum Number ◽  
Rf Switch ◽  
Voltage Range ◽  
Custom Made

This paper presents a fast-switching Transmit/Receive (T/R) Single-Pole-Double-Throw (SPDT) Radio Frequency (RF) switch. Thorough analyses have been conducted to choose the optimum number of stacks, transistor sizes, gate and body voltages, to satisfy the required specifications. This switch applies six stacks of series and shunt transistors as big as 3.9 mm/160 nm and 0.75 mm/160 nm, respectively. A negative charge pump and a voltage booster generate the negative and boosted control voltages to improve the harmonics and to keep Inter-Modulation Distortion (IMD) performance of the switch over 100 dBc. A Low Drop-Out (LDO) regulator limits the boosted voltage in Absolute Maximum Rating (AMR) conditions and improves the switch performance for Process, Voltage and Temperature (PVT) variations. To reduce the size, a dense custom-made capacitor consisting of different types of capacitors has been presented where they have been placed over each other in layout considering the Design Rule Checks (DRC) and applied in negative charge pump, voltage booster and LDO. This switch has been fabricated and tested in a 90 nm Silicon-on-Insulator (SOI) process. The second and third IMD for all specified blockers remain over 100 dBc and the switching time as fast as 150 ns has been achieved. The Insertion Loss (IL) and isolation at 2.7 GHz are −0.17 dB and −33 dB, respectively. This design consumes 145 uA from supply voltage range of 1.65 V to 1.95 V and occupies 440 × 472 µm2 of die area.

Compact CMOS Analog Multiplier Free of Voltage Reference Generators

2020 ◽  
Vol 15 (3) ◽  
pp. 1-12
Author(s):  
Ana Isabela Araújo Cunha ◽  
Antonio José Sobrinho De Sousa ◽  
Edson Pinto Santana ◽  
Robson Nunes De Lima ◽  
Fabian Souza De Andrade ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Harmonic Distortion ◽  
Current Mode ◽  
Input Voltage ◽  
Voltage Reference ◽  
Analog Multiplier ◽  
Voltage Range ◽  
Voltage Variation ◽  
Static Power ◽  
Four Quadrant

This work presents a CMOS four quadrant analog multiplier architecture for application as the synapse element in analog cellular neural networks. For this reason, the circuit has voltage-mode inputs and a current-mode output and the chief design targets are compactness and low energy consumption. A signal application method is proposed that avoids voltage reference generators, which contributes to reduce sensitivity to supply voltage variation. Performance analysis through simulation has been accomplished for a design in CMOS 130 nm technology with 163 µm2 total active area. The circuit features ±50 mV input voltage range, 86 µW static power and ‑28.4 dB maximum total harmonic distortion. A simple technique for manual calibration is also presented.

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