scholarly journals Computation of Constant Gain and NF Circles for 60 GHz Ultra-low noise Amplifiers

2021 ◽  
Vol 3 (3) ◽  
pp. 146-156
Author(s):  
Christina Gnanamani ◽  
Shanthini Pandiaraj
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Communication Link ◽  
60 Ghz ◽  
Output Impedance ◽  
Maximum Value ◽  
Input Module ◽  
Ultra Low Noise ◽  
Constant Source

Wireless communication is a constantly evolving and forging domain. The action of the RF input module is critical in the radio frequency signal communication link. This paper discusses the design of a RF high frequency transistor amplifier for unlicensed 60 GHz applications. The Transistor used for analysis is a FET amplifier, operated at 60GHz with 10 mA at 6.0 V. The simulation of the amplifier is made with the Open Source Scilab 6.0.1 console software. The MESFET is biased such that Sll = 0.9<30°, S12 = 0.21<-60°, S21= 2.51<-80°, and S22 = 0.21<-15o. It is found that the transistor is unconditionally stable and hence unilateral approximation can be employed. With these assumptions, the maximum value of source gain of the amplifier is found to be at 7.212 dB and the various constant source gain circles and noise figure circles are computed. The transistor has the following noise parameters: Fmin = 3 dB, Rn = 4 Ω, and Γopt = 0.485<155°. The amplifier is designed to have an input and output impedance of 50 ohms which is considered as the reference impedance.

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

scholarly journals A 60 GHz fully differential LNA in 90 nm CMOS technology

2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
Noise Figure ◽  
Design Procedure ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Differential

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.

scholarly journals Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1222 ◽  
Author(s):  
Longhi ◽  
Pace ◽  
Colangeli ◽  
Ciccognani ◽  
Limiti
Keyword(s):  
Integrated Circuit ◽  
Noise Figure ◽  
State Of The Art ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Wave State ◽  
Millimetre Wave ◽  
Monolithic Microwave Integrated Circuit ◽  
V Band ◽  
And Performance

An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targeted applications and corresponding systems. Advanced technologies are presented highlighting potentials and drawbacks related to the considered possibilities. Design techniques, applicable to different requirements, are presented and analyzed. An LNA operating at V-band (59–66 GHz) is designed and tested following the presented guidelines, demonstrating state-of-the-art results in terms of noise figure (average NF < 2 dB). A state-of-the-art table, reporting recent results available in open literature on this topic, is provided and examined, focusing on room temperature operation and performance in cryogenic environment. Finally, trends versus frequency and perspectives are outlined.

ON-CHIP INDUCTORS OPTIMIZATION FOR ULTRA WIDE BAND LOW NOISE AMPLIFIERS

2011 ◽  
Vol 20 (07) ◽  
pp. 1231-1242 ◽  
Author(s):  
J. DEL PINO ◽  
SUNIL L. KHEMCHANDANI ◽  
ROBERTO DÍAZ-ORTEGA ◽  
R. PULIDO ◽  
H. GARCÍA-VÁZQUEZ
Keyword(s):  
Quality Factor ◽  
Noise Figure ◽  
Impedance Matching ◽  
Broad Band ◽  
Wide Band ◽  
Design Guidelines ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Integrated Inductor ◽  
On Chip

In this work, the influence of the inductor quality factor in wide band low noise amplifiers has been studied. Electromagnetic simulations have been used to model the integrated inductor broad band response. The influence of the quality factor on LNA performance of the inductors that compound the impedance matching networks, inductive degeneration and broadband load has been studied, obtaining design guidelines for optimizing the amplifier gain flatness. Using this guidelines, an LNA with wideband input matching, shunt-peaking load, and an output buffer was designed. Using Austria Mikro Systems BiCMOS 0.35 m process, a prototype has been fabricated achieving the following measured specifications: maximum gain of 12.5 dB at 3.4 GHz with a -3 dB bandwidth of 1.7–5.3 GHz, noise figure from 4.3 to 5.2 dB, and unity gain at 9.4 GHz.

scholarly journals Metamodelling Techniques for the Optimal Design of Low-Noise Amplifiers

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 787
Author(s):  
Amel Garbaya ◽  
Mouna Kotti ◽  
Mourad Fakhfakh ◽  
Esteban Tlelo-Cuautle
Keyword(s):  
Particle Swarm Optimization ◽  
Optimal Design ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Scattering Parameters ◽  
Perfect Agreement ◽  
Swarm Optimization ◽  
The Third ◽  
Intercept Point

In this article we deal with the optimal sizing of low-noise amplifiers (LNAs) using newly proposed metamodeling techniques. The main objective is to construct metamodels of main performances of the LNAs (namely, the third intercept point (IIP3), the scattering parameters (Sij), and the noise figure (NF)) and use them inside an optimization kernel for maximizing the circuits’ performances. The kriging surrogate modelling technique is used for constructing these models. The particle swarm optimization (PSO) technique is considered as the optimization metaheuristic. Two CMOS amplifiers are considered: a UMTS LNA and a multistandard LNA. Obtained results show that, at the considered working frequencies, the first LNA exhibits at 2.14 GHz a noise figure of 1.30 dB, an S21 of 16.01 dB, an S11 of −12.60 dB, and an IIP3 of 8.30 dBm. At 2 GHz, the second LNA has a noise figure of 1.24 dB, an S21 of 17.16 dB, an S11 of −13.74 dB, and an IIP3 of 4.30 dBm. Comparisons between results obtained using the constructed models and those of the simulation are presented to show the perfect agreement between them.

Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS

2013 ◽  
Vol 61 (1) ◽  
pp. 553-561 ◽  
Author(s):  
Ming-Hsien Tsai ◽  
Shawn S. H. Hsu ◽  
Fu-Lung Hsueh ◽  
Chewn-Pu Jou ◽  
Tzu-Jin Yeh
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz ◽  
Esd Protection

Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMT technology

1998 ◽  
Vol 8 (11) ◽  
pp. 396-398 ◽  
Author(s):  
A. Bessemoulin ◽  
L. Verweyen ◽  
H. Massler ◽  
W. Reinert ◽  
G. Alquie ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz

RECENT PROGRESS ON GaN-BASED ELECTRON DEVICES

2006 ◽  
Vol 16 (02) ◽  
pp. 469-477
Author(s):  
Yasuhiro Uemoto ◽  
Yutaka Hirose ◽  
Tomohiro Murata ◽  
Hidetoshi Ishida ◽  
Masahiro Hikita ◽  
...  
Keyword(s):  
Noise Figure ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Low Noise ◽  
60 Ghz ◽  
Si Doping ◽  
Power Handling Capability ◽  
Source Resistance ◽  
State Breakdown ◽  
A Current

We present results of some novel AlGaN/GaN heterojunction field-effect transistors (HFETs) specifically developed for RF front-end and power applications. To reduce the parasitic resistance, two unique techniques: selective Si doping into contact area and a superlattice (SL) cap structure, are developed. With the selective Si doping method, a transistor with an on-state resistance as low as 1.86 Ω·mm and a Tx/Rx switch IC with very low insertion loss (0.26 dB) and very high power handling capability (P1dB over 40 dBm) were obtained. With the SL cap HFETs, an ultra low source resistance of 0.4 Ω·mm was achieved and excellent DC and RF performances were demonstrated. The typical characteristics of these HFETs are: maximum transconductance of over 400 mS/mm, maximum drain current of 1.2 A/mm, cut-off frequency of 60 GHz, maximum oscillation frequency of 140 GHz, and a very low noise figure of 0.7 dB with 15 dB gain at 12 GHz. For power applications, in order to significantly reduce fabrication cost, we fabricated the AlGaN/GaN HFET on a conductive Si substrate with a source-via grounding (SVG) structure. The device has a very low on-state sheet resistance of 1.9 mΩ·cm2, a high off-state breakdown voltage of 350 V, and a current handling capability of 150 A. In addition, a sub-nano second switching response with t r of 98 ps and t f of 96 ps with a current density as high as 2.0 kA/cm2 is demonstrated for the first time.

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