Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

2016 ◽  
Vol 14 (4) ◽  
pp. 042302-42306 ◽  
Author(s):  
Haiyan Lü Haiyan Lü ◽  
Yuanjie Lü Yuanjie Lü ◽  
Qiang Wang Qiang Wang ◽  
Jianfei Li Jianfei Li ◽  
Zhihong Feng Zhihong Feng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excitation Power ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence ◽  
Ingan Quantum Wells

Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

2016 ◽  
Vol 14 (8) ◽  
pp. 083501-83501
Author(s):  
Haiyan Lü Haiyan Lü ◽  
Yuanjie Lü Yuanjie Lü ◽  
Qiang Wang Qiang Wang ◽  
Jianfei Li Jianfei Li ◽  
Zhihong Feng Zhihong Feng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excitation Power ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence ◽  
Ingan Quantum Wells

Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells

2011 ◽  
Vol 32 (2) ◽  
pp. 164-168
Author(s):  
叶志成 YE Zhi-cheng ◽  
舒永春 SHU Yong-chun ◽  
曹雪 CAO Xue ◽  
龚亮 GONG Liang ◽  
姚江宏 YAO Jiang-hong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Effect ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Investigation of temperature-dependent photoluminescence in multi-quantum wells

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Yutao Fang ◽  
Lu Wang ◽  
Qingling Sun ◽  
Taiping Lu ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

2020 ◽  
Vol 257 (6) ◽  
pp. 2000016 ◽  
Author(s):  
Carsten Netzel ◽  
Veit Hoffmann ◽  
Jens W. Tomm ◽  
Felix Mahler ◽  
Sven Einfeldt ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Temperature Dependent ◽  
Carrier Diffusion ◽  
Charge Carrier Diffusion ◽  
Ingan Quantum Wells

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

2013 ◽  
Vol 22 (3) ◽  
pp. 037802 ◽  
Author(s):  
Yi Gu ◽  
Yong-Gang Zhang ◽  
Yu-Xin Song ◽  
Hong Ye ◽  
Yuan-Ying Cao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Temperature Dependent ◽  
Strained Quantum Wells ◽  
Temperature Dependent Photoluminescence

Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence

2007 ◽  
Vol 18 (10) ◽  
pp. 105302 ◽  
Author(s):  
Lin Yang ◽  
Junichi Motohisa ◽  
Junichiro Takeda ◽  
Katsuhiro Tomioka ◽  
Takashi Fukui
Keyword(s):  
Quantum Wells ◽  
Selective Area Growth ◽  
Temperature Dependent ◽  
Selective Area ◽  
Area Growth ◽  
Temperature Dependent Photoluminescence

Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence

2008 ◽  
Vol 19 (40) ◽  
pp. 409801-409801 ◽  
Author(s):  
Lin Yang ◽  
Junichi Motohisa ◽  
Junichiro Takeda ◽  
Katsuhiro Tomioka ◽  
Takashi Fukui
Keyword(s):  
Quantum Wells ◽  
Selective Area Growth ◽  
Temperature Dependent ◽  
Selective Area ◽  
Area Growth ◽  
Temperature Dependent Photoluminescence

Temperature Dependent Photoluminescence of Narrow CdTe Quantum Wells Embedded in Zn1?xMgxTe

2002 ◽  
Vol 229 (1) ◽  
pp. 591-595 ◽  
Author(s):  
F. Tinjod ◽  
L. Besombes ◽  
L. Marsal ◽  
K. Kheng ◽  
H. Mariette
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence
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