Laser-induced damage and periodic stripe structures of a CaF2 single crystal by an ArF excimer laser

2020 ◽  
Vol 18 (2) ◽  
pp. 021403
Author(s):  
Jingzhen Shao ◽  
Xu Liang ◽  
Libing You ◽  
Ning Pan ◽  
Ying Lin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Excimer Laser ◽  
Caf2 Single Crystal ◽  
Arf Excimer Laser ◽  
Laser Induced Damage

Fabrication Fluoride High Reflection Mirror by Thermal Evaporation in the ArF Excimer Laser

2013 ◽  
Vol 552 ◽  
pp. 252-255
Author(s):  
Yan He Chang ◽  
Chun Shui Jin ◽  
Chun Li ◽  
Jing Cheng Jin
Keyword(s):  
Excimer Laser ◽  
Thermal Evaporation ◽  
Optical Loss ◽  
Single Layer ◽  
Laser Cavity ◽  
Fused Silica ◽  
Scattering Loss ◽  
Arf Excimer Laser ◽  
Laser Induced Damage ◽  
High Reflection

ArF excimer laser is the main light resource for the microlithography technology. In the laser cavity, the optical components with lowest absorption and scattering loss are necessary. As a consequence only a few materials are promising candidates for 193nm coatings with high transmittance or high reflectance. Fluoride films exhibit relatively low optical loss as well as high laser induced damage thresholds. The potentiality of LaF3 and MgF2 is evaluated in respect of the production of improved optical coatings for applications. For this purpose, single layer is prepared by thermal evaporation at the deposited temperatures of 523K on Fused Silica. A first order bulk inhomogeneity model for extracting the optical constants of weak absorbing film is applied, which is based on spectrophotometry. Refractive index (n) and extinction coefficient (k) of the optimal LaF3 film are 1.678 and 2.24×10-3 at 193nm. In the case of the optimal MgF2 film, n and k are 1.443 and 4.72×10-4 at 193nm. High reflection (HR) LaF3/MgF2 coatings are designed and fabricated for normal incident on CaF2. The experimental results indicate that after coated and fluoride coatings deposit, according to optimal process, can have more suitable optical properties at deep ultraviolet (DUV), the reflectance of HR coatings reaches more than 98% at 193nm.

1701 Birefringence Analysis for Calcium Fluoride Single Crystal Used as Chamber Window of ArF Excimer Laser Light Source

2010 ◽  
Vol 2010.23 (0) ◽  
pp. 437-438
Author(s):  
Yuta KITAMURA ◽  
Noriyuki MIYAZAKI ◽  
Takahito KUMAZAKI ◽  
Naoto NAGAKURA ◽  
Yasuhiro HASHIMOTO ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Source ◽  
Excimer Laser ◽  
Calcium Fluoride ◽  
Laser Light ◽  
Arf Excimer Laser ◽  
Laser Light Source

Phosphorus Doping into Silicon Using ArF Excimer Laser

1989 ◽  
Vol 158 ◽  
Author(s):  
Abdelilah Slaoui ◽  
Francois Foulon ◽  
Eric Fogarassy ◽  
Paul Siffert
Keyword(s):  
Single Crystal ◽  
Excimer Laser ◽  
Impurity Concentration ◽  
Single Crystal Silicon ◽  
Chemical Doping ◽  
Concentration Profiles ◽  
Phosphorus Doping ◽  
Crystal Silicon ◽  
Arf Excimer Laser ◽  
193 Nm

ABSTRACTChemical doping of single-crystal silicon in a PF5 atmosphere is performed byirradiation with an ArF excimer laser working at 193 nm. We have investigated the dependence of doping parameters such as the number of pulses and PF5 gas pressure on the sheet resistance and the impurity concentration profiles. From these results, it is found that phosphorus atoms are produced by pyrolysis of PF5 molecules adsorbed (chemisorbed at low pressure and physisorbed at pressure higher than 1 Torr) on thesilicon surface. As for the incorporation mechanism, it is shown that the process is external rate limited for doping in PF5 ambient whereas mainly diffusion limitedfor doping using only the chemisorbed layer.

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

Suppression of Eu2+ luminescence and enhancement of Eu3+ emission in Eu: CaF2 single crystal via Gd3+ co-doping

2020 ◽  
pp. 117877
Author(s):  
Zixuan Fang ◽  
Hao Yu ◽  
Bo Zhang ◽  
Dapeng Jiang ◽  
Qinghui Wu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Co Doping ◽  
Caf2 Single Crystal

Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser

1998 ◽  
Vol 72 (12) ◽  
pp. 1472-1474 ◽  
Author(s):  
Takashi Sugino ◽  
Hideaki Ninomiya ◽  
Junji Shirafuji ◽  
Koichiro Matsuda
Keyword(s):  
Excimer Laser ◽  
Arf Excimer Laser
Sign in / Sign up

Export Citation Format

Share Document