scholarly journals Magnetic and dielectric characteristics of Nd and Nd-Mg substituted strontium hexaferrite

2018 ◽  
Vol 4 (1) ◽  
pp. 21-29 ◽  
Author(s):  
Basharat Want ◽  
Bilal Hamid Bhat
Keyword(s):  
Dielectric Constant ◽  
Grain Boundary ◽  
Secondary Phase ◽  
Xrd Analysis ◽  
Lattice Parameter ◽  
Anisotropy Constant ◽  
Systematic Investigation ◽  
Hexagonal Structure ◽  
Strontium Hexaferrite ◽  
Parameter Ratio

A systematic investigation on the phase formation, magnetic, dielectric and impedance properties of strontium hexaferrites doped with Nd and Nd-Mg was performed. All ferrite samples were prepared by the citrate-precursor method and characterized with a combination ofX-ray diffraction, Vibrating sample magnetometer and impedance analyser. XRD analysis confirms the magnetoplumbite structure with space groupp63/mmcwithout any secondary phase. The lattice parameter ratioc/alies in the range of 3.92 to 3.94 and shows that the prepared material exhibits M-type hexagonal structure. An increase in coercivity and a decrease in magnetization were observed for all the samples. Large value of coercivity suggests that these materials are useful in longitudinal recording media. Further, it was found that the value of magnetocrystalline anisotropy constantK1decreases with the substitution of Nd and Nd-Mg. Measurement of dielectric loss and dielectric constant were performed as a function of temperature and frequency. Dielectric constant and ac conductivity of Sr0.95Nd0.05Mg0.05Fe11.95O19is more as compared to Sr0.95Nd0.05Fe12O19and SrFe12O19for all frequencies. The value of grain boundary resistance (Rgb) of Sr0.95Nd0.05Fe12O19is less as compared to SrFe12O19and Sr0.95Nd0.05Mg0.05Fe11.95O19and vice versa trend is observed in the value of capacitance of the grain boundary (Cgb) and in the values of relaxation time (τgb).

Tuning the mechanical and dielectric properties of zinc incorporated hydroxyapatite

2020 ◽  
Vol 16 ◽  
Author(s):  
Alliya Qamar ◽  
Rehana Zia ◽  
Madeeha Riaz
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bone Growth ◽  
Healing Process ◽  
Secondary Phase ◽  
Chemical Precipitation ◽  
Hexagonal Structure ◽  
Precipitation Method ◽  
Low Frequencies ◽  
A Minor

Background: Hydroxyapatite is similar to bone mineral in chemical composition, has good biocompatibility with host tissue and bone. Objective: This work aims to tailor the mechanical and dielectric properties of hydroxyapatite with zinc sudstitution, to improve wearability of implant and accelerate the healing process. Method: Pure and zinc incorporated hydroxyapatite Ca10(PO4)6(OH)2 samples have been successfully prepared by means of the chemical precipitation method. Results: The results showed that hydroxyapatite(Hap) having hexagonal structure was the major phase identified in all the samples. It was found that secondary phase of β-tricalcium phosphate (β-TCP) formed due to addition of Zinc resulting in biphasic structure BCP (Hap + β-TCP). A minor phase of ZnO also formed for higher concentration of Zn (Zn ≥ 2mol%) doping. It was found that the Zn incorporation to Hap enhanced both mechanical and dielectric properties without altering the bioactive properties. The microhardness increased upto 0.87 GPa for Zn concentration equal to 1.5mol%, which is comparable to the human bone ~0.3 - 0.9 GPa. The dielectric properties evaluated in the study showed that 1.5 mol% Zn doped hydroxyapatite had highest dielectric constant. Higher values of dielectric constant at low frequencies signifies its importance in healing processes and bone growth due to polarization of the material under the influence of electric field. Conclusion: Sample Z1.5 having 1.5 mol% Zn doping showed the most optimized properties suitable for bone regeneration applications.

Effect of Cu-Excess on the Microstructure and Microwave Dielectric Properties of CaCu3Ti4O12 Ceramics

2015 ◽  
Vol 1087 ◽  
pp. 50-54 ◽  
Author(s):  
Mohamad Johari Abu ◽  
Julie Juliewatty Mohamed ◽  
Mohd Fadzil Ain ◽  
Zainal Arifin Ahmad
Keyword(s):  
Dielectric Constant ◽  
Microwave Dielectric Properties ◽  
Secondary Phase ◽  
Solid State Reaction Method ◽  
Lattice Parameter ◽  
Tangent Loss ◽  
Conventional Solid State Reaction ◽  
Microwave Dielectric ◽  
Order Of Magnitude ◽  
Grain Growth Behavior

CaCu(3+x)Ti4O12 (CCTO) ceramics with different Cu-excess (x = 0 – 0.6) were prepared by conventional solid-state reaction method. Characterization of the prepared ceramics with XRD and FESEM showed that lattice parameter and grain size are slightly increased, indicating Cu-excess to have the big impact on the both phase structure and microstructure. The XRD profiles indicated that the secondary phase (CuO or Cu2O) existed at edge/corner of CCTO grain, which promoted inhibited grain growth behavior. The CCTO ceramics exhibited two trends of dielectric constant related to frequency, which showed a flatter curve about ~50 in 1 – 25 GHz regions, and it’s dropped rapidly to ~35 in 25 – 50 GHz region. With Cu-excess, the dielectric constant of the ceramics was increased for an average of a quarter-order of magnitude, while the tangent loss also increased up to triple times than x = 0, for the same frequency range. Despite enormous increase of dielectric constant related to varying Cu-excess, the tangent loss also increased.

Effect of Ce-Mn Codoping on the Structural, Morphological and Electrical Properties of the BaTiO3 Based Ceramics

2021 ◽  
Vol 11 (4) ◽  
pp. 12215-12226
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Doping Concentration ◽  
Xrd Analysis ◽  
Solid State Reaction Method ◽  
Lattice Parameter ◽  
Stoichiometric Ratio ◽  
Co Doping ◽  
Mn Doped ◽  
Co Doped

Undoped, Cerium (Ce) doped, Manganese (Mn) doped and Ce-Mn co-doped Barium Titanate (BaTiO3) with the general formula Ba1-xCexMnyTi1-yO3 (where x = 0.00, 0.01, 0.02, 0.03, y = 0.00; x = 0.00, y =0.01, 0.02, 0.03; and x = y = 0.01, 0.02,0.03) were synthesized by solid-state reaction method and sintered at 1200 C for 4 hr with an aim to study their structural and electrical properties. The grain size of the samples has been estimated using the Scanning Electron Microscopy (SEM). The X-ray Diffraction (XRD) analysis indicates that the structure of the Ce-doped and Ce-Mn co-doped BaTiO3 is cubic. However, the undoped BaTiO3 and Mn-doped BaTiO3 confirmed the tetragonal-cubic mixed phases. With the change of doping concentrations, the positions of different peaks shifted slightly. The lattice parameter varied irregularly with increasing doping concentration because of Mn's changeable valency. EDX spectra confirmed the presence of Ba, Ti, Ce, and Mn contents in the co-doped samples with stoichiometric ratio. Crystallinity is observed to be clearly increased when Ce-Mn is co-doped in BaTiO3. J-V characteristic curves indicate transition from conducting to semiconducting nature for the doped and co-doped samples with the increase in temperature. The dielectric constant of the samples increases up to 4500 with the doping concentration. The higher values of dielectric constant are observed for the 2% Mn-doped and 1% Ce-Mn co-doped samples compared to the other undoped samples. For the undoped and Mn-doped samples, constant dielectric values increase with temperature but decrease for the Ce-doped and Ce-Mn co-doped samples. It is inferred that co-doping of BaTiO3 with Ce and Mn would be beneficial and economical for its applications.

scholarly journals STRUCTURAL AND DIELECTRIC PROPERTIES OF MgAl2-2xY2xO4 NANOPARTICLES

2013 ◽  
Vol 22 ◽  
pp. 361-364
Author(s):  
ROHAN SAMKARIA ◽  
VIMAL SHARMA
Keyword(s):  
Dielectric Constant ◽  
Ac Conductivity ◽  
Small Polaron ◽  
Spinel Phase ◽  
Secondary Phase ◽  
Xrd Analysis ◽  
Particle Size Analysis ◽  
Size Analysis ◽  
Polaron Hopping ◽  
Co Precipitation

A series of Nano MgAl2-2xY2xO4 (x = 0.00, 0.07 & 0.10) was prepared by chemical co-precipitation technique. X-ray diffraction (XRD) analysis reveals that a secondary phase appears at x = 0.10 along with the spinel phase. The broad peaks in the XRD pattern and particle size analysis by Transmission electron microscopy (TEM) confirmed nanocrystalline nature of the samples. Room temperature dielectric response as a function of frequency (1 kHz to 1MHz) shows that dielectric constant loss tangent and ac conductivity decreases with increase in yttrium content. The variation of dielectric constant as a function of frequency indicates the dielectric dispersion due to Maxwell-Wagner Polarization. The variation of AC conductivity with frequency suggests the conduction mechanism due to small polaron hopping.

Quasiperiodic interfaces: HREM observations of grain and phase boundaries

1990 ◽  
Vol 48 (4) ◽  
pp. 332-333
Author(s):  
K. L. Merkle
Keyword(s):  
Atomic Structure ◽  
Direct Determination ◽  
Lattice Parameter ◽  
Atomic Scale ◽  
Misfit Dislocations ◽  
Oxide Systems ◽  
Atomic Structures ◽  
Periodic Arrays ◽  
Parameter Ratio ◽  
Metal Metal

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

scholarly journals Y3+ substituted Sr-hexaferrites: sol-gel synthesis, structural, magnetic and electrical characterization

Cerâmica ◽  
2019 ◽  
Vol 65 (374) ◽  
pp. 274-281 ◽  
Author(s):  
S. S. Satpute ◽  
S. R. Wadgane ◽  
S. R. Kadam ◽  
D. R. Mane ◽  
R. H. Kadam
Keyword(s):  
Electron Microscopy ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Combustion Method ◽  
Hexagonal Structure ◽  
Strontium Hexaferrite ◽  
X Ray Diffraction ◽  
X Ray ◽  
Morphological Studies ◽  
Auto Combustion

Abstract Y3+ substituted strontium hexaferrites having chemical composition SrYxFe12-xO19 (x= 0.0, 0.5, 1.0, 1.5) were successfully synthesized by sol-gel auto-combustion method. The structural and morphological studies of prepared samples were investigated by using X-ray diffraction technique, energy dispersive X-ray spectroscopy, field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy. The X-ray diffraction pattern confirmed the single-phase hexagonal structure of yttrium substituted strontium ferrite and the lattice parameters a and c increased with the substitution of Y3+ ions. The crystallite size also varied with x content from 60 to 80 nm. The morphology was studied by FE-SEM, and the grain size of nanoparticles ranged from 44 to 130 nm. The magnetic properties were investigated by using vibrating sample magnetometer. The value of saturation magnetization decreased from 49.60 to 35.40 emu/g. The dielectric constant decreased non-linearly whereas the electrical dc resistivity increased with the yttrium concentration in strontium hexaferrite.

Investigation of Dead Layer Thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au Thin Film Capacitors

2000 ◽  
Vol 655 ◽  
Author(s):  
L. J. Sinnamon ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Layer Thickness ◽  
Perovskite Phase ◽  
Frequency Dispersion ◽  
Dead Layer ◽  
Parameter Ratio ◽  
Thin Film Capacitors ◽  
Dead Layer Thickness ◽  
The Dead

AbstractThin film capacitors with barium strontium titanate (BST) dielectric layers of 7.5 to 950 nm were fabricated by Pulsed Laser Deposition. XRD and EDX analyses confirmed a strongly oriented BST cubic perovskite phase with the desired cation stoichiometry. Room temperature frequency dispersion (ε100 kHz / ε100 Hz) for all capacitors was greater than 0.75. Absolute values for the dielectric constant were slightly lower than expected. This was attributed to the use of Au top electrodes since the same sample showed up to a threefold increase in dielectric constant when Pt was used in place of Au. Dielectric constant as a function of thicknesses greater than 70 nm, was fitted using the series capacitor model. The large interfacial parameter ratio di / εi of 0.40 ± 0.05 nm implied a significant dead-layer component within the capacitor structure. Modelled consideration of the dielectric behaviour for BST films, whose total thickness was below that of the dead layer, predicted anomalies in the plots of d/ ε against d at the dead layer thickness. For the SRO/BST/Au system studied, no anomaly was observed. Therefore, either (i) 7.5 nm is an upper limit for the total dead layer thickness in this system, or (ii) dielectric collapse is not associated with a distinct interfacial dead layer, and is instead due to a through-film effect.

INVESTIGATIONS ON Sm- AND Nb-SUBSTITUTED PZT CERAMICS

2006 ◽  
Vol 20 (29) ◽  
pp. 1879-1882 ◽  
Author(s):  
CHANDRA PRAKASH ◽  
J. K. JUNEJA
Keyword(s):  
Dielectric Constant ◽  
Single Phase ◽  
Xrd Analysis ◽  
Chemical Formula ◽  
X Ray Diffraction ◽  
Pzt Ceramics ◽  
Ceramic Method ◽  
X Ray ◽  
Niobium Doping ◽  
Constant Versus

In the present paper, we report the effect of Samarium substitution and Niobium doping on the properties of a PZT(52:48). The properties studied are: structural, dielectric and ferroelectric. The samples with chemical formula Pb 0.99 Sm 0.01 Zr 0.52 Ti 0.48 O 3 were prepared by solid-state dry ceramic method. Small amount (0.5 wt%) of Nb 2 O 5 was also added. X-ray diffraction (XRD) analysis showed formation of a single phase with tetragonal structure. Dielectric properties were studied as a function of temperature and frequency. Transition temperature, Tc, was determined from dielectric constant versus temperature plot. The material shows well-defined ferroelectric (PE) hysteresis loop.

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