Low Temperature Growth of Patterned ZnO Nanowires and their Field Emission Characteristics

2011 ◽  
Vol 110-116 ◽  
pp. 1918-1922 ◽  
Author(s):  
Yong Ai Zhang ◽  
Jin Yang Lin ◽  
Chao Xing Wu ◽  
Tai Liang Guo

Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/µm at current density of 10µA/cm2 and its the threshold field at current density of 1mA/cm2 is about 6.56 V/µm at an emitter-anode gap of 400µm. and the fluctuation of FE current density is smaller than 10% for 3.5h at electric field of 6V/µm. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.

2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Dongmei Ban ◽  
Shaozhi Deng ◽  
Ningsheng Xu ◽  
Jun Chen ◽  
Juncong She ◽  
...  

We study the field emission characteristics of large-area films of crystallineMoO3microbelt grown on silicon substrate by thermal evaporation in air using a commercial infrared sintering furnace. It is found that their turn-on field, threshold field, resistance to microdischarge and field emission current stability are better thanMoO3nanowires,MoO3nanobelts andMoO3nanoflower. In addition, good uniform distribution of field emission sites can be observed. The physical reasons are explained responsible for such improvements on field emission characteristics ofMoO3material. These results indicate that large-areaMoO3microbelts may be suitable for cold-cathode electron source application.


2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
Lingjie Wang ◽  
Jinyang Lin ◽  
Yun Ye ◽  
Tailiang Guo

SnO2 nanowires were synthesized by thermal evaporation, and the field emission characteristics of SnO2 nanowires are investigated in detail. The results show that the turn-on field is as low as 1.39 V/μm. And the fluctuation of field emission currents is as low as 2.8% for 24 h. The results reveal that SnO2 nanowires hold promise for field emission display application.


2014 ◽  
Vol 633-634 ◽  
pp. 21-24
Author(s):  
Yan Ning Yang ◽  
Zhi Yong Zhang ◽  
Wei Xia Li ◽  
Chun Xue Zhai ◽  
Qiao Ping Liu ◽  
...  

The test of nano-diamond cathode field emission characteristics was conducted by changing the vacuum, the influence of vacuum change on nano-diamond field emission characteristics was also explored. It was found that under the condition of low vacuum, nano-diamond field emission turn-on field is relatively high, as the vacuum increases, turn-on field decreases gradually, and current density increases. When system vacuum reaches to above 10-4Pa level, turn-on field becomes stable, the stable value is 4.5 V/μm; and current density also becomes stable, the stable value is 117 μA/cm2; the luminescence effect of anode which is 200μm distant from the cathode in the vacuum chamber also becomes stable. Results show that 10-4Pa is system vacuum limit parameter of stable working of field emission display, the experiment provides a basis to the design and manufacture of nano-diamond field emission display.


Author(s):  
Jungwoo Lee ◽  
Taehee Park ◽  
Jongtaek Lee ◽  
Juwon Ahn ◽  
Mingyeong Shin ◽  
...  

2011 ◽  
Vol 347-353 ◽  
pp. 4008-4011
Author(s):  
Shao Lin Xue ◽  
Shu Xian Wu ◽  
Ran Huang ◽  
Zi Xin Jiang ◽  
Jian Fang Fang

This paper presented a novel post-treatment method of He plasma,which could effectively improve the field emission characteristics of screen-printed CNTs cathodes. Notable changes in the surface morphologies of screen-printed CNTs cathodes were investigated by scanning electron micro scope (SEM) as the f unction of treatment by He plasma.The results showed the post-treated CNTs cathodes hold lower turn-on electric field,higher field emission current density,more emission sites,and better uniformity than those of untreated ones.


2011 ◽  
Vol 279 ◽  
pp. 88-92
Author(s):  
Jin Hai Gao ◽  
Wu Qing Zhang ◽  
Zhen Li

The globe-like diamond microcrystalline aggregates films were fabricated by microwave plasma chemical vapor deposition method. The field emission properties and emission stability of the films were tested using a diode structure in vacuum. It was found that the globe-like diamond microcrystalline aggregates films exhibited good electron emission properties and stability. The turn-on field of 0. 55 V /μm and the current density of 11mA/cm2 at the electric fields of 2.73V/μm were obtained. At the successive operator circles, the turn-on field tends to stabilize at 1. 08V /μm and the current density of 6.6 mA/cm2 is obtained.


2019 ◽  
Vol 3 (4) ◽  
pp. 105
Author(s):  
Aarti R. Gunjal ◽  
Ujjwala P. Chothe ◽  
Yogesh A. Sethi ◽  
Rajendra P. Panmand ◽  
Jalinder D. Ambekar ◽  
...  

The three-dimensional hierarchical SrS/Bi2S3 heterostructures were synthesized by a template-free single-step hydrothermal method. The structural and morphological studies revealed the formation of a single crystalline orthorhombic heterostructure with rod-like morphologies possessing a high aspect ratio. The field emission properties of SrS/Bi2S3 nanorods were investigated. J–E and the Fowler–Nordheim (F–N) plot, as well as long-term field emission (FE) stability, were studied. SrS/Bi2S3 nanoflowers have enhanced the FE properties more than the virgin Bi2S3. The observed values of the re-producible turn-on field for SrS/Bi2S3 defined to draw an emission current density of ca. 1 µA/cm2 were found to be ca. 2.50 V/µm, and of the threshold field to draw a current density of ca. 10 µA/cm2 were found to be ca. 3.00 V/µm (without visible light illumination). A maximum emission current density of ca. 527 μA/cm2 was drawn without light and a current density of ca. 1078 μA/cm2 with light, which is higher than that of pristine Bi2S3.


1996 ◽  
Vol 424 ◽  
Author(s):  
J. Y. Shim ◽  
E. J. Chi ◽  
S. J. Rho ◽  
H. K. Baik

ABSTRACTThe field emission characteristics of the Si emitters and the diamond coated Si emitters are investigated. The Fowler-Nordheim plots of the two types of Si emitters show linear slopes. It means that the I-V characteristics follow the Fowler-Nordheim relation. Field emission for the two types of diamond coated Si emitters exhibits significant enhancement both in turn-on voltage and total emission current. The Raman spectrum shows that the high intensity graphite peak is observed with diamond peak and thereby large amounts of graphite may be included in the diamond grain boundary. It seems to be thought that the graphite participates in the low field emission. However, further investigations are needed to understand whether the graphite may enhance the emission characteristics of diamond or not.


2002 ◽  
Vol 740 ◽  
Author(s):  
T.K. Tsai ◽  
W.L. Liu ◽  
S.H. Hsieh ◽  
W.J. Chen

ABSTRATECarbon nanotubes (CNTs) were grown by electroless Ni-P plated on silicon substrate in a microwave heating chemical vapor deposition (CVD) system with methane gas at 700 °C. The CNTs grown on Ni–P catalyst showed random orientation and small diameter around 15–30 nm. Field emission test results indicated that the Ni–P catalyzed-CNTs exhibited excellent field emission properties. The turn-on field was about 0.56 V/μm with an emission current density 10 μA/cm2 and the threshold field was 4.4 V/μm with an emission current density 10 mA/cm2. These excellent field emission properties may be attributed to the random orientation and small diameter of CNTs.


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