Characterization of Electrical Parameters of Copper Phthalocyanine Based Organic Electronic Device in Presence of Fullerene Nanoparticles

2021 ◽  
Vol 1167 ◽  
pp. 35-42
Author(s):  
Sudipta Sen ◽  
Nabin Baran Manik

Characterization of electrical parameters of Copper Phthalocyanine dye has been done in the present work. In the context of electrical parameters, the Schottky barrier and ideality factor of the organic device has been measured and the effects of fullerene nanoparticles on these parameters have been studied. Analysis of electrical parameters has been done by the current-voltage characteristics of the device. The influence of fullerene nanoparticles lessens the Schottky barrier to 0.71 eV from 0.75 eV. The current flow is assumed to be injection limited as the Schottky barrier is greater than 0.3 eV - 0.4 eV. The Schottky barrier is also estimated by the Norde method. Norde's method shows lessening of barrier height from 0.70 eV to 0.65 eV under the influence of fullerene nanoparticles. The measured ideality factor value reduces from 3.787 to 1.495 in presence of fullerene nanoparticles. The charge injection mechanism at metal-organic contact gets influenced by the interfacial Schottky barrier height. Decrease in both Schottky barrier and ideality factor attribute to the increase in charge flow and it allows a reduction in the device’s transition voltage from 2.5 V to 1.0 V.

2020 ◽  
Vol 5 (1) ◽  
pp. 30
Author(s):  
Ali Sadoun

In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K). Electrical parameters of Au/InSb/InP such as barrier height (Φb), ideality factor and series resistance have been calculated by employing the conventional (I-V), Norde, Cheung and Chattopadhyay methods. Measurements show that the Schottky barrier height (SBH), ideality factor and series resistance, RS for Au/InSb/InP Schottky diode in the temperature range (300 K–425 K)  are 0.602-0.69eV, 1.683-1.234 and 84.54-18.95 (Ω), respectively. These parameters were extracted using Atlas-Silvaco-Tcad logical.


2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.


Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 636
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Muhammad Haroon Rashid

The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.


1997 ◽  
Vol 6 (2-4) ◽  
pp. 398-402 ◽  
Author(s):  
P.K. Baumann ◽  
S.P. Bozeman ◽  
B.L. Ward ◽  
R.J. Nemanich

2012 ◽  
Vol 90 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy

In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.


1993 ◽  
Vol 318 ◽  
Author(s):  
C-P. Chen ◽  
Y. A. Chang ◽  
T.F. Kuech

ABSTRACTThermally stable Al/n-GaAs Schottky contacts, up to annealing temperature at 500 °C for 20 seconds, have been realized by sputter deposition from an Al target to (100) n-GaAs at a base pressure ∼2×10−7 Torr. The Schottky barrier height was 0.75 eV (0.9 eV) when using the I-V (C-V) method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 °C for 20 seconds. This barrier height, 0.97 eV, is the highest value reported for Al/n-GaAs diodes. The interfacial stability between Al and GaAs has been examined by cross section transmission electron microscopy. A (200) dark field cross section transmission electron microscopy image of the contact after annealing at 600 °C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.


2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.


2011 ◽  
Vol 50 (1R) ◽  
pp. 011201 ◽  
Author(s):  
Osamu Ichikawa ◽  
Noboru Fukuhara ◽  
Masahiko Hata ◽  
Takayuki Nakano ◽  
Masakazu Sugiyama ◽  
...  

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