Electrochemical Migration Characteristics of Ag-Plated Cu Powders in Conductive Thick Film

2010 ◽  
Vol 146-147 ◽  
pp. 1070-1074 ◽  
Author(s):  
Yuan Long Liu ◽  
Jin Ming Long ◽  
Xiao Yun Zhu ◽  
Wen Jing Liu
Keyword(s):  
Thick Film ◽  
Coupling Effect ◽  
Water Drop ◽  
Silver Powder ◽  
Electrochemical Migration ◽  
Migration Behavior ◽  
Galvanic Coupling ◽  
Surface Insulation Resistance ◽  
Anode Copper ◽  
Dc Bias

Silver electrochemical migration results in the degradation of surface insulation resistance, and has been attributed to the dendritic bridge between adjacent conductors. In this paper, the electrochemical migration behavior of both Ag-plated Cu powder and pure silver powder in conductive thick film (CTF) are investigated. By Electrochemical migration test (water drop+ DC bias method), and the SEM and XRD examinations, it was found that the silver electrochemical migration in CTF was minimized when the Ag-plated Cu powder substitute silver powder in CTF. This is ascribed to the galvanic coupling effect that plays an important role in the migration inhibition. As sacrifice anode copper restrains the cathodic silver from dissolving in solution so as to decreases the probability of dendritic growth.

scholarly journals Electrochemical migration behavior of moldy printed circuit boards in a 10 mT magnetic field

RSC Advances ◽  
2021 ◽  
Vol 11 (45) ◽  
pp. 28178-28188
Author(s):  
Xuan Liu ◽  
Ziheng Bai ◽  
Qianqian Liu ◽  
Yali Feng ◽  
Chaofang Dong ◽  
...  
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Failure Mechanism ◽  
Printed Circuit Boards ◽  
Electrochemical Migration ◽  
Migration Behavior ◽  
Circuit Boards ◽  
Printed Circuit

Proposed failure mechanism of electrochemical migration under an external magnetic field caused by mold.

Fabrication of an IPL-sintered Cu circuit and its electrochemical migration behavior

2021 ◽  
Vol 863 ◽  
pp. 158726
Author(s):  
Choong-Jae Lee ◽  
Dong-Gil Kang ◽  
Byeong-Uk Hwang ◽  
Kyung Deuk Min ◽  
Jinho Joo ◽  
...  
Keyword(s):  
Electrochemical Migration ◽  
Migration Behavior

ELECTROCHEMICAL MIGRATION BEHAVIOR OF Sn-3.0Ag-0.5Cu SOLDER ALLOY UNDER THIN ELECTROLYTE LAYERS

2019 ◽  
Vol 26 (06) ◽  
pp. 1850208 ◽  
Author(s):  
BOKAI LIAO ◽  
WENFENG JIA ◽  
RUIYAN SUN ◽  
ZHENYU CHEN ◽  
XINGPENG GUO
Keyword(s):  
Solder Alloy ◽  
Electrochemical Migration ◽  
Migration Behavior ◽  
Time To Failure ◽  
Sac305 Solder ◽  
Maximum Value ◽  
The Mean ◽  
Mean Time ◽  
Observation Results

The electrochemical migration (ECM) behavior of Sn-3.0Ag-0.5Cu solder alloy under thin electrolyte layers was investigated using a technique based on the coupling of in situ electrochemical measurements and optical observation. Results showed that the mean time to failure first increased and then decreased as thickness of the electrolyte layer increased, the maximum value was present at 200[Formula: see text][Formula: see text]m. The higher the bias voltage applied, the faster was the rate of dendrite growth. And, Sn leaded the ECM of SAC305 solder alloy. Mechanisms relevant have been proposed to explain the ECM behavior of Sn-3.0Ag-0.5Cu solder alloy.

Metallurgy for SiC Die Attach for Operation at 500°C

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000008-000017 ◽  
Author(s):  
Ping Zheng ◽  
Phillip Henson ◽  
R. Wayne Johnson ◽  
Liangyu Chen
Keyword(s):  
High Temperature ◽  
Thick Film ◽  
Failure Surface ◽  
Nano Particle ◽  
Test Results ◽  
Shear Tests ◽  
Die Attach ◽  
Film Layer ◽  
Potential Failure ◽  
Dc Bias

Metallurgy for high temperature SiC die attach involves the substrate metallization, die metallization, and die attach material. This paper examines off-eutectic Au-Sn as the die attach alloy with a PtAu thick film metallization on AlN substrates. A pure Au thick film layer was printed over the PtAu thick film layer. The SiC backside metallizations evaluated were Ti/TaSi/Pt/Au and Cr/NiCr/Au. Die shear tests were performed after aging at 500°C and after thermal cycling. The shear test results and failure surface analysis are discussed. Nanoparticle Ag and liquid transient phase bonding with Ag based metallurgies have been proposed for high temperature die attach. Data on the migration of sintered nano-particle Ag and thin film Ag dc bias during storage in air at 300°C and 375°C are presented. Migration of Ag is a potential failure mechanism for Ag based high temperature metallurgies.

Electrochemical Migration behavior of Sn9Zn

2019 ◽  
Author(s):  
Xiao Qi ◽  
Haoran Ma ◽  
Xiaogan Li ◽  
Shengyan Shang ◽  
Yunpeng Wang ◽  
...  
Keyword(s):  
Electrochemical Migration ◽  
Migration Behavior
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