The Influence of PZT Film Thickness on Microstructure in CSD Processing

2006 ◽  
Vol 45 ◽  
pp. 1268-1274
Author(s):  
A. Etin ◽  
G.E. Shter ◽  
G.S. Grader
Keyword(s):  
State Of The Art ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Pzt Film ◽  
Pzt Films ◽  
Film Microstructure ◽  
Multiple Coating

The R&D of state of the art PZT (PbZrxTi1-xO3) films is important due to their piezoelectric, pyroelectric and ferroelectric properties. Currently, Chemical Solution Deposition (CSD) methods (e.g. spin coating of a sol-gel precursor solution) are successfully used in our lab to deposit PZT films with intermediate thickness. This method employs multiple coating procedures and different microstructure is observed after each coating. We report on the film microstructure evolution studied by quantitative analysis of HRSEM images as a function of thickness.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

One-Axis-Oriented Crystal Growth of Lead Zirconate Titanate Thin Films on Metal Substrates Using Perovskite-Type Oxide Nanosheet Layer

2013 ◽  
Vol 582 ◽  
pp. 15-18
Author(s):  
Y. Minemura ◽  
Y. Kondoh ◽  
H. Funakubo ◽  
Hiroshi Uchida
Keyword(s):  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Oriented Crystal ◽  
Solution Deposition ◽  
Pzt Film ◽  
Perovskite Type Oxide ◽  
Pzt Films ◽  
Perovskite Type

One-axis-oriented Pb (Zr,Ti)O3(PZT) films were fabricated using a chemical solution deposition technique on (111)Pt/TiO2/(100)Si and Inconel625 substrates buffered by nanosheet Ca2Nb3O10(ns-CN). The (001)-oriented PZT crystals (Zr/Ti=0.40:0.60, tetragonal) were preferentially grown on (001)ns-CN/Inconel625, whereas the PZT crystals deposited on (001)ns-CN/(111)Pt/ TiO2/(100)Si exhibited preferential PZT(100) orientation. The resulting PZT film on (001)ns-CN/Inconel625 indicated remanent polarization of approximately 59 μC/cm2, which was significantly larger than that on (001)ns-CN/(111)Pt/TiO2/(100)Si.

Electrical Characteristics of Chemical Solution Deposited Nd3+ Doped PZT (53/47) Thin Films in Planar Electrode Configuration

2000 ◽  
Vol 655 ◽  
Author(s):  
S.B. Majumder ◽  
B. Perez ◽  
B. Roy ◽  
A. Martinez ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Electrode Configuration ◽  
Electrical Characteristics ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Planar Electrode ◽  
Pzt Films ◽  
Formation Behavior

AbstractElectrical characteristics of ferroelectric thin films in planar electrode configuration are important to characterize these materials for their applications in micro electro mechanical (MEM) and tunable microwave devices. In the present work we have prepared polycrystalline Pb1划3x/2Ndx(Zr0.53Ti0.47)O3 (x = 0.0 to 10.0 at %) thin films on platinized silicon substrate by chemical solution deposition (CSD) technique. The films were characterized in terms of their dielectric and ferroelectric properties by depositing planar interdigital finger electrodes on the surface of the films by electron beam lithography. The capacitance and loss tangent of undoped and 4 at % Nd doped PZT films measured at 100 kHz were found to be 138 pF, 0.033 and 95 pF, 0.019 respectively. Saturated hysteresis loops were obtained in undoped PZT film by applying 100 V across 10 μm electrode separation. Nd doped PZT films on the other hand, electrically shorted at comparatively lower voltage. The electrical characteristics of these films are correlated with their phase formation behavior and microstructural features.

Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Spontaneous Polarization ◽  
Chemical Solution Deposition ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTInfluences of the B-site substitution using Dy3+ ion on the crystal structure and ferroelectric properties of lead zirconate titanate (PZT) films were investigated. Dy3+-substituted PZT films with nominal chemical compositions of Pb1.00Dyx (Zr0.40Ti0.60)1-(3x/4)O3 (x = 0 ∼ 0.06) were fabricated by a chemical solution deposition (CSD). Polycrystalline PZT films with preferential orientation of (111)PZT were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates, while epitaxially-grown (111)PZT films were fabricated on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si substrate. Ratio of PZT lattice parameters (c/a), which corresponds to its crystal anisotropy, was enhanced by the Dy3+-substitution with x = 0.02. Spontaneous polarization (Ps) of Dy3+-substituted PZT film (x = 0.02) along polar [001] axis of PZT lattice was estimated from saturation polarization (Psat) value of the epitaxially-grown (111)PZT film on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si to be 84 μC/cm2 that was significantly larger than that of non-substituted PZT (= 71 μC/cm2). We concluded that the enhancement of Ps value could be achieved by the Dy3+-substitution that promoted the crystal anisotropy of PZT lattice.

Microstructural development and electrical properties of sol-gel prepared lead zirconate-titanate thin films

1991 ◽  
Vol 6 (10) ◽  
pp. 2208-2217 ◽  
Author(s):  
Cheng-Chen Hsueh ◽  
Martha L. Mecartney
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Nucleation And Growth ◽  
Dielectric Constants ◽  
Microstructural Development ◽  
Pzt Films

A systematic investigation of the microstructural evolution of fast fired, sol-gel derived Pb(Zr, Ti)O3 films (Zr/Ti = 54/46) was performed by analytical transmission electron microscopy (TEM). It was found that the nucleation and growth of the sol-gel PZT films were influenced by the precursor chemistry. The precursor solution was composed of Pb 2-ethylhexanoate, Ti isopropoxide, and Zr n-propoxide in n-propanol. Porous and spherulitic perovskite grains nucleated and grew from a pyrochlore matrix for NH4OH-modified films, but no chemical segregation was found. These thin films consisted completely of porous spherulitic PZT grains (∼2 μm) when the firing temperature was increased. Chemical phase separation with regions of Zr-rich pyrochlore particles separated by Zr-deficient perovskite grains was observed in the initial stages of nucleation and growth for CH3COOH-modified PZT films. This phase separation is attributed to the effect of acetate ligands on the modification of molecular structure of the PZT precursor. Firing the acid-modified films at higher temperatures for long times resulted in porous perovskite grain structures. The residual porosity in these films is suggested to be a result of differential evaporation/condensation rates during the deposition process and the gas evolution at high temperatures due to trapped organics in the films. Dielectric and ferroelectric properties were correlated to the microstructure of the films. Lower dielectric constants (∼500) and higher coercive fields (∼65 kV/cm) were found for the acid-modified PZT films with phase separation in comparison to those measured from the sol-gel films with a uniform microstructure (∽ > 600, Ec < 50 kV/cm). All films fired at 650 °C showed relatively good remanent polarization on the order of 20 μC/cm2.

Effect of Substrate-induced Strains on Ferroelectric and Dielectric Properties of PZT Films Prepared by Sol-Gel Technique

2020 ◽  
Vol 10 ◽  
Author(s):  
Hamed A. Gatea
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Lead Zirconate Titanate ◽  
Perovskite Structure ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Film ◽  
Pzt Films ◽  
Gel Technique

Background: Lead Zirconate Titanate (PZT) films were synthesized by sol gel technique. The growth of films on ITO, Si\SiO2\Ti\Au, Si\Au and Si\SiO2\Ti\Al substrates discussed. In this study, Zirconium nitrate, lead acetate, and Ti (IV) isoproxide used as raw materials. Besides, acetic acid used as a solvent and 2-methoxy ethanol used as a stabilizer for Ti structure. Along with this, PZT films have perovskite structure, thin-film perovskite structure with high dielectric properties and hysteresis loop have been investigated. Methods: The effects of the type’s substrate on dielectric properties the ferroelectric properties were investigated and compared PZT film which deposited in different substrates. The films annealed at 600 C to complete crystalline films. XRD shows tetragonal PZT films have a strong perovskite structure with [100] prefer plane orientation. SEM and crosssection technique used to study for PZT surface films. Results: The dielectric constant at room temperature was different values depending on the types of substrate. The dielectric properties of the PZT films measured at 1 kHz were 120-400 dielectric constant and dielectric loss 0.02-0.08 at room temperature and 1 kHz. Conclusion: The largest remnant polarization (Pr) and coercive field (Ec) are obtained for PZT film deposited on Si\SiO2\Ti\Au substrate, equal to 26.6 mC/cm2 and 38.3 kV/cm, as compared to 16.3 mC/cm2 and 32.2 kV/cm2 for PZT film deposited on ITO substrate.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Ruthenium Oxide ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Precursor Material ◽  
Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

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