Adhesion of Diamond Film to Co- Deficient Cemented Tungsten Carbide Substrate

2007 ◽  
Vol 336-338 ◽  
pp. 1728-1730
Author(s):  
Hong Lin Li ◽  
Li Gou ◽  
Jun Guo Ran
Keyword(s):  
Diamond Film ◽  
Microwave Plasma ◽  
Indentation Test ◽  
Chemical Vapor ◽  
Scratch Test ◽  
Good Adhesion ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Strong Adhesion ◽  
Continuous Surface

Diamond film was synthesized on Co-deficient (Co content is about 0.5%) WC-Co substrate using microwave plasma chemical vapor deposition (MPCVD) equipment without special pretreatment. SEM, XRD, Rockwell-indentation test and scratch test were used to analyze the structure and morphology of the diamond film and its adhesion to the substrate. Co content was also measured by EDAX. The results show that the film synthesized is of ideal diamond structure with perfect and uniform grains, dense and continuous surface and strong adhesion. Co content on the surface of the substrate is about 0.8% after 20h deposition, which is considered as one of the main causes to get good adhesion.

Formation of highly oriented diamond film on carburized (100) Si substrate

1995 ◽  
Vol 10 (1) ◽  
pp. 158-164 ◽  
Author(s):  
Hideaki Maeda ◽  
Miki Irie ◽  
Takafumi Hino ◽  
Katsuki Kusakabe ◽  
Shigeharu Morooka
Keyword(s):  
Diamond Film ◽  
Vapor Deposition ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanometer Scale ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Oriented Film

Highly oriented diamond film was grown on a (100) Si substrate by a bias-enhanced microwave-plasma chemical vapor deposition. The Si surface was carburized at a faster rate by bias treatment than by carburization alone, but the initial carburization stage was indispensable. During the bias treatment, the flat surface was changed to a textured structure on the nanometer scale. The formation of this structure was required for the synthesis of a highly oriented diamond film. Diamond microcrystals formed subsequently were irregular and of a few to a few tens nanometers in size. They then grew to oriented film in the following growth process.

LATERAL OVERGROWTH OF DIAMOND FILMS ON METAL MASKED SUBSTRATE BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 841-844 ◽  
Author(s):  
H. YAMAMOTO ◽  
Y. NAOI ◽  
Y. FUJII ◽  
Y. SHINTANI
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Crystal Nucleation ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Mask Material

We have grown laterally overgrown diamond films on stripe patterned silicon substrates by microwave plasma chemical vapor deposition. Titanium was used as the mask material and stripe patterns were fabricated using conventional photolithographic method. The selective growth area and the metal mask part order to enhance the crystal nucleation was performed before photolithographic process. SEM observation revealed that the diamond film was laterally overgrown on titanium mask. The result width of diamond film was 16 μm. The grain size on mask region was about three times as large as that g rown on nucleation region.

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

scholarly journals Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 888
Author(s):  
Pengfei Zhang ◽  
Weidong Chen ◽  
Longhui Zhang ◽  
Shi He ◽  
Hongxing Wang ◽  
...  
Keyword(s):  
Methane Concentration ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Effect Analysis ◽  
Plasma Chemical Vapor Deposition ◽  
Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

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