Sol-Gel Processed ZrO2 Based Forming-Free Resistive Switching Memory Devices

2022 ◽  
Vol 1048 ◽  
pp. 198-202
Author(s):  
K.M. Shafi ◽  
K. Muhammed Shibu ◽  
N.K. Sulfikarali ◽  
K.P. Biju

In this work, we fabricated ZrO2 based resistive random access memory by sol-gel spin coating technique and investigated its structural, optical and resistive switching properties. The X-ray diffraction pattern revealed that 400 °C annealed ZrO2 thin film has tetragonal structure. The optical band gap value of ZrO2 thin film obtained was 5.51 eV. The resistive switching behaviour of W/ZrO2/ITO capacitor like structure was studied. It was found that no initial electroforming process required for the device. The fabricated devices show a self-compliance bipolar resistive switching behaviour and have high on off ratio (>102). Our result suggests that solution processed ZrO2 has great potential to develop transparent and flexible resistive random access memory devices.

RSC Advances ◽  
2020 ◽  
Vol 10 (33) ◽  
pp. 19337-19345 ◽  
Author(s):  
Jameela Fatheema ◽  
Tauseef Shahid ◽  
Mohammad Ali Mohammad ◽  
Amjad Islam ◽  
Fouzia Malik ◽  
...  

The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.


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