Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

2022 ◽  
Vol 1049 ◽  
pp. 317-324
Author(s):  
Abdumalik G. Gaibov ◽  
K.I. Vakhobov ◽  
B.V. Ibragimova ◽  
U.E. Zhuraev ◽  
D.T. Rasulova
Keyword(s):  
Signal Amplitude ◽  
Ultrasonic Waves ◽  
Charge Carriers ◽  
Temperature Fields ◽  
Physical Processes ◽  
Polarization Effects ◽  
Impurity Atoms ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

The currents of n-p junctions and polarization effects caused by the capture processes of diffusion Si-receivers (detectors) of radiation exposed by ultrasound have been analyzed in this work. It was found that there are local concentrations of impurity atoms with an effective size l>6μm30μm in Si-n-p radiation receivers. They determine the behavior of the signal amplitude in different intervals of electric and temperature fields. It was found that at Е>1500V/cm and T>168K, the efficiency of collecting nonequilibrium charge carriers significantly increases and doublets of spectral α-lines and “humps” disappear at the temperature dependences of the signal amplitude. The main physical processes and mechanisms that determine the appearance of the phenomenon of "polarization" of Si-n-p-detectors were investigated. This phenomenon is caused by the existence of local gold atoms, which arise in the process of manufacturing technology of Si-n-p-receivers and act as effective trapping centers.

scholarly journals Investigation of temperature dependences of current-voltage characteristics of hybrid organic materials based on zinc complexes

2021 ◽  
pp. 81-87
Author(s):  
Andrey Tyutyunik ◽  
Vladimir Gurchenko ◽  
Alim Mazinov
Keyword(s):  
Coordination Compound ◽  
Electrochemical Analysis ◽  
Zinc Complexes ◽  
Charge Carriers ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Homo And Lumo ◽  
Current Voltage Characteristics ◽  
Fundamental Values

In this work, we analyzed the current-voltage characteristics in the temperature range of the hybrid organic material C24H24N6O3Zn in order to determine the prospects for using this compound as a semiconductor material. The range of temperature measurements was from 270 to 330 K. An electrochemical analysis of the studied coordination compound was carried out, the energies of the HOMO and LUMO levels were calculated. The method of obtaining, microscopy, and also the method of measuring the temperature dependences of the electrical properties of the obtained thin films of these hybrid materials based on zinc complexes are described. A number of fundamental values of the films of this coordination compound have been calculated: the activation energy is  0.88 eV and the mobility of charge carriers is  1.4710-11 cm V-1 s-1.

scholarly journals Электрические свойства пленок металлоорганических перовскитов

2019 ◽  
Vol 61 (2) ◽  
pp. 243
Author(s):  
А.М. Ершова ◽  
М.К. Овезов ◽  
И.П. Щербаков ◽  
А.Н. Алешин
Keyword(s):  
Phase Transitions ◽  
Electrical Properties ◽  
Orthorhombic Phase ◽  
Activation Energies ◽  
Charge Carriers ◽  
Temperature Range ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Characteristic Points ◽  
Current Voltage Characteristics

AbstractThe electrical properties of the films of organometallic perovskites CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 were studied. Current–voltage characteristics for the CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 samples were measured in a temperature range of 300–80 K, from which the temperature dependences of resistivity ρ( T ) having characteristic points of inflection in a range of 160–240 K were determined. The activation energies of charge carriers prior to and after points of inflection were determined. It is assumed that the observed features in the temperature dependences of resistivity (temperature at the points of inflection) correlate with the temperatures of tetragonal-to-orthorhombic phase transitions for two studied organometallic perovskites (CH_3NH_3PbBr_3 and CH_3NH_3PbI_3).

scholarly journals Устойчивые к полевым повреждениям структуры кремний-сверхтонкий окисел (42 нм)-поликремний

2021 ◽  
Vol 55 (1) ◽  
pp. 24
Author(s):  
Д.А. Белорусов ◽  
Е.И. Гольдман ◽  
В.Г. Нарышкина ◽  
Г.В. Чучева
Keyword(s):  
Electronic States ◽  
Oxide Thickness ◽  
The State ◽  
Charge Carriers ◽  
Potential Relief ◽  
Insulator Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ultrathin Oxide ◽  
Silicon Silicon

Results of studies of silicon−silicon-ultrathin oxide (42 A˚ )−polysilicon structures structures stabile resistant to field damage are presented. It was found that the total recharging of localized electronic states and minority charge carriers, concentrated at the substrate-insulator interface, which occurs with a change in the field voltage and is close to the same characteristic of structures with an oxide thickness of 37 A˚ . The current, flowing through SiO2, in the enrichment state of the semiconductor increases with increasing voltage much more strongly than in the state of depletion. Moreover, the asymmetry of current-voltage characteristics in relation to the polarity of the voltage, falling on the insulator in samples with a thickness of 42 A˚ SiO2 is more pronounced than in structures with an oxide of 37 A˚ . An explanation for this asymmetry is possible, if the potential relief in the insulator has a maximum, significantly shifted to the oxide−polysilicon interface, and the potential on the branch from the semiconductor side significantly decreases to the contact with the substrate.

scholarly journals Photoconductivity of Thin Films Obtained from a New Type of Polyindole

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 228
Author(s):  
Renat B. Salikhov ◽  
Akhat G. Mustafin ◽  
Ilnur N. Mullagaliev ◽  
Timur R. Salikhov ◽  
Anastasiia N. Andriianova ◽  
...  
Keyword(s):  
Thin Films ◽  
Fluorescence Spectra ◽  
Test Sample ◽  
Charge Carriers ◽  
Transport Layer ◽  
Photoluminescence Spectra ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
New Type ◽  
Current Voltage Characteristics

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.

scholarly journals Особенности транспорта электронов и фотопроводимости в слое наноразмерных частиц сульфида свинца

2019 ◽  
Vol 45 (8) ◽  
pp. 3
Author(s):  
М.И. Шишкин ◽  
М.В. Гавриков ◽  
И.Т. Ягудин ◽  
А.Г. Роках
Keyword(s):  
Basic Mechanism ◽  
Charge Carriers ◽  
Optical Measurements ◽  
Free Charge ◽  
Current Voltage ◽  
Wide Range ◽  
Current Change ◽  
Current Voltage Characteristics ◽  
Lead Sulfide Nanoparticles ◽  
A Current

In the lead sulfide nanoparticles-based layers deposited from alcohol suspensions, analysis of the current-voltage characteristics made it possible to establish the basic mechanism of electron transport. Previously, using optical measurements in the range of 3500 nm, it was shown that the organic component in such layers was practically absent. When exposed to wide range radiation corresponding to the “transparency window” of the atmosphere of 8000–14000 nm, a current change in PbS nanodust was detected, where, as previously shown, absorption on free charge carriers can occur.

scholarly journals Исследование вольт-амперных характеристик светодиодных гетероструктур на основе InAsSb в диапазоне температур 4.2-300 K

2021 ◽  
Vol 55 (6) ◽  
pp. 502
Author(s):  
А.А. Семакова ◽  
Н.Л. Баженов ◽  
К.Д. Мынбаев ◽  
А.В. Черняев ◽  
С.С. Кижаев ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Solid Solutions ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Leakage Currents ◽  
Temperature Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Additional Channel

The results of a study of the current-voltage characteristics of LED heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs and InAsSb/InAsSbP quantum wells (QWs) in the temperature range 4.2–300 K are presented. The mechanisms of the carrier transport depending on the temperature and design of the heterostructure was determined. It is shown that the charge transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunnelling mechanism was observed. For heterostructure InAs/InAs/InAs0.15Sb0.31P0.54 the additional channel of the carrier transport was determined. It was shown that the presence of 108 QWs InAs0.88Sb0.12/InAs into the active region of the heterostructure led to an increase in the leakage currents through the heterojunction in the whole temperature range, which is probably related to the tunnelling of charge carriers.

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